Datasheet> 器件分类 > 分立半导体> 二极管> BYM36EGP

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BYM36EGP: 产品描述Rectifier Diode, Avalanche, 1 Phase, 1 Element, 3A, 1000V V(RRM), Silicon, DO-201AD, PLASTIC PACKAGE-2; 产品类别分立半导体二极管; 文件大小74KB，共2页; 制造商Gulf Semiconductor; 官网地址http://www.gulfsemi.com/

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BYM36EGP概述

Rectifier Diode, Avalanche, 1 Phase, 1 Element, 3A, 1000V V(RRM), Silicon, DO-201AD, PLASTIC PACKAGE-2

BYM36EGP规格参数

参数名称	属性值
厂商名称	Gulf Semiconductor
包装说明	PLASTIC PACKAGE-2
Reach Compliance Code	unknown
ECCN代码	EAR99
其他特性	LOW LEAKAGE CURRENT
应用	FAST RECOVERY
外壳连接	ISOLATED
配置	SINGLE
二极管元件材料	SILICON
二极管类型	RECTIFIER DIODE
最大正向电压 (VF)	1.78 V
JEDEC-95代码	DO-201AD
JESD-30 代码	O-PALF-W2
最大非重复峰值正向电流	65 A
元件数量	1
相数	1
端子数量	2
最高工作温度	175 °C
最低工作温度	-65 °C
最大输出电流	3 A
封装主体材料	PLASTIC/EPOXY
封装形状	ROUND
封装形式	LONG FORM
最大重复峰值反向电压	1000 V
最大反向电流	10 µA
最大反向恢复时间	0.15 µs
表面贴装	NO
技术	AVALANCHE
端子形式	WIRE
端子位置	AXIAL
Base Number Matches	1

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BYM36AGP THRU BYM36EGP

SINTERED GLASS JUNCTION

FAST SWITCHING PLASTIC RECTIFIER

VOLTAGE：200V to 1000V

：

CURRENT: 3.0A

FEATURE

High temperature metallurgically bonded construction

Sintered glass cavity free junction

Capability of meeting environmental standard of

MIL-S-19500

High temperature soldering guaranteed

350°C /10sec/0.375”lead length at 5 lbs tension

Low leakage current Typical Ir<0.1µA

Excellent stability

Guaranteed avalanche energy absorption capability

DO-201AD

MECHANICAL DATA

Terminal: Plated axial leads solderable per

MIL-STD 202E, method 208C

Case: Molded with UL-94 Class V-0 recognized Flame

Retardant Epoxy

Polarity: color band denotes cathode

Mounting position: any

Dimensions in inches and (millimeters)

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

(single-phase, half-wave, 60HZ, resistive or inductive load rating at 25°C, unless otherwise stated)

SYMBOL

Maximum Recurrent Peak Reverse Voltage

Maximum RMS Voltage

Maximum DC blocking Voltage

Vrrm

Vrms

Vdc

BYM36

AGP

200

140

200

300

BYM36

BGP

400

280

400

500

BYM36

CGP

600

420

600

700

3.0

BYM36

DGP

800

560

800

900

BYM36

EGP

1000

700

1000

units

reverse avalanche breakdown voltage

at I

= 0.1 mA

Maximum Average Forward Rectified

Current 10mm lead length at Ta =55

°C

Peak Forward Surge Current 8.3ms single

half sine-wave superimposed on rated load

Maximum Forward Voltage at rated Forward

Current and 25

°C

=3.0A

non-repetitive peak reverse avalanche energy

(Note 1)

Maximum DC Reverse Current

Ta =25

°C

at rated DC blocking voltage

Ta =125

°C

Maximum Reverse Recovery Time (Note 2)

Typical Junction Capacitance

Typical Thermal Resistance

(Note 3)

(Note 4)

(BR)R

(min)

If(av)

Ifsm

Ersm

Trr

Rθja

Tstg, Tj

1100

1.6

10.0

150.0

100

75.0

20.0

-65 to +175

1.78

150

Storage and Operating Junction Temperature

°C

Note: 1. L = 120 mH; Tj = Tj max prior to surge; inductive load switched off

2.Reverse Recovery Condition If

=0.5A,

Ir =1.0A, Irr =0.25A

3.Measured at 1.0 MHz and applied reverse voltage of 4.0Vdc

4.Thermal Resistance from Junction to Ambient at 3/8”lead length, P.C. Board Mounted

Rev.A1

www.gulfsemi.com

BYM36EGP相似产品对比

	BYM36EGP	BYM36AGP	BYM36BGP	BYM36DGP
描述	Rectifier Diode, Avalanche, 1 Phase, 1 Element, 3A, 1000V V(RRM), Silicon, DO-201AD, PLASTIC PACKAGE-2	Rectifier Diode, Avalanche, 1 Phase, 1 Element, 3A, 200V V(RRM), Silicon, DO-201AD, PLASTIC PACKAGE-2	Rectifier Diode, Avalanche, 1 Phase, 1 Element, 3A, 400V V(RRM), Silicon, DO-201AD, PLASTIC PACKAGE-2	Rectifier Diode, Avalanche, 1 Phase, 1 Element, 3A, 800V V(RRM), Silicon, DO-201AD, PLASTIC PACKAGE-2
厂商名称	Gulf Semiconductor	Gulf Semiconductor	Gulf Semiconductor	Gulf Semiconductor
包装说明	PLASTIC PACKAGE-2	PLASTIC PACKAGE-2	PLASTIC PACKAGE-2	PLASTIC PACKAGE-2
Reach Compliance Code	unknown	unknown	unknown	unknown
ECCN代码	EAR99	EAR99	EAR99	EAR99
其他特性	LOW LEAKAGE CURRENT	LOW LEAKAGE CURRENT	LOW LEAKAGE CURRENT	LOW LEAKAGE CURRENT
应用	FAST RECOVERY	FAST RECOVERY	FAST RECOVERY	FAST RECOVERY
外壳连接	ISOLATED	ISOLATED	ISOLATED	ISOLATED
配置	SINGLE	SINGLE	SINGLE	SINGLE
二极管元件材料	SILICON	SILICON	SILICON	SILICON
二极管类型	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE
最大正向电压 (VF)	1.78 V	1.6 V	1.6 V	1.78 V
JEDEC-95代码	DO-201AD	DO-201AD	DO-201AD	DO-201AD
JESD-30 代码	O-PALF-W2	O-PALF-W2	O-PALF-W2	O-PALF-W2
最大非重复峰值正向电流	65 A	65 A	65 A	65 A
元件数量	1	1	1	1
相数	1	1	1	1
端子数量	2	2	2	2
最高工作温度	175 °C	175 °C	175 °C	175 °C
最低工作温度	-65 °C	-65 °C	-65 °C	-65 °C
最大输出电流	3 A	3 A	3 A	3 A
封装主体材料	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
封装形状	ROUND	ROUND	ROUND	ROUND
封装形式	LONG FORM	LONG FORM	LONG FORM	LONG FORM
最大重复峰值反向电压	1000 V	200 V	400 V	800 V
最大反向电流	10 µA	10 µA	10 µA	10 µA
最大反向恢复时间	0.15 µs	0.1 µs	0.1 µs	0.15 µs
表面贴装	NO	NO	NO	NO
技术	AVALANCHE	AVALANCHE	AVALANCHE	AVALANCHE
端子形式	WIRE	WIRE	WIRE	WIRE
端子位置	AXIAL	AXIAL	AXIAL	AXIAL
Base Number Matches	1	1	1	1

BYM36EGP

BYM36EGP概述

BYM36EGP规格参数

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