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Datasheet> 器件分类 > 存储> 存储> GM71V64403CLJ-6

GM71V64403CLJ-6: 产品描述EDO DRAM, 16MX4, 60ns, CMOS, PDSO32,; 产品类别存储存储; 文件大小387KB，共11页; 制造商LG Semicon Co Ltd

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GM71V64403CLJ-6概述

EDO DRAM, 16MX4, 60ns, CMOS, PDSO32,

GM71V64403CLJ-6规格参数

参数名称	属性值
厂商名称	LG Semicon Co Ltd
包装说明	,
Reach Compliance Code	unknown
访问模式	FAST PAGE WITH EDO
最长访问时间	60 ns
其他特性	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH/SELF REFRESH; BATTERY BACKUP OPERATION
JESD-30 代码	R-PDSO-J32
内存密度	67108864 bit
内存集成电路类型	EDO DRAM
内存宽度	4
功能数量	1
端口数量	1
端子数量	32
字数	16777216 words
字数代码	16000000
工作模式	ASYNCHRONOUS
最高工作温度	70 °C
最低工作温度
组织	16MX4
封装主体材料	PLASTIC/EPOXY
封装形状	RECTANGULAR
封装形式	SMALL OUTLINE
认证状态	Not Qualified
自我刷新	YES
最大供电电压 (Vsup)	3.6 V
最小供电电压 (Vsup)	3 V
标称供电电压 (Vsup)	3.3 V
表面贴装	YES
技术	CMOS
温度等级	COMMERCIAL
端子形式	J BEND
端子位置	DUAL
Base Number Matches	1

GM71V64403CLJ-6相似产品对比

	GM71V64403CLJ-6	GM71VS64403CJ-5	GM71V64403CLJ-5	GM71VS64403CJ-6	GM71V64403CLT-5	GM71V64403CLT-6	GM71VS64403CT-6	GM71VS64403CT-5
描述	EDO DRAM, 16MX4, 60ns, CMOS, PDSO32,	EDO DRAM, 16MX4, 50ns, CMOS, PDSO32,	EDO DRAM, 16MX4, 50ns, CMOS, PDSO32,	EDO DRAM, 16MX4, 60ns, CMOS, PDSO32,	EDO DRAM, 16MX4, 50ns, CMOS, PDSO32,	EDO DRAM, 16MX4, 60ns, CMOS, PDSO32,	EDO DRAM, 16MX4, 60ns, CMOS, PDSO32,	EDO DRAM, 16MX4, 50ns, CMOS, PDSO32,
厂商名称	LG Semicon Co Ltd	LG Semicon Co Ltd	LG Semicon Co Ltd	LG Semicon Co Ltd	LG Semicon Co Ltd	LG Semicon Co Ltd	LG Semicon Co Ltd	LG Semicon Co Ltd
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown	unknown	unknown	unknown
访问模式	FAST PAGE WITH EDO	FAST PAGE WITH EDO	FAST PAGE WITH EDO	FAST PAGE WITH EDO	FAST PAGE WITH EDO	FAST PAGE WITH EDO	FAST PAGE WITH EDO	FAST PAGE WITH EDO
最长访问时间	60 ns	50 ns	50 ns	60 ns	50 ns	60 ns	60 ns	50 ns
其他特性	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH/SELF REFRESH; BATTERY BACKUP OPERATION	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH/SELF REFRESH; BATTERY BACKUP OPERATION	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH/SELF REFRESH; BATTERY BACKUP OPERATION	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH/SELF REFRESH; BATTERY BACKUP OPERATION	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH
JESD-30 代码	R-PDSO-J32	R-PDSO-J32	R-PDSO-J32	R-PDSO-J32	R-PDSO-G32	R-PDSO-G32	R-PDSO-G32	R-PDSO-G32
内存密度	67108864 bit	67108864 bit	67108864 bit	67108864 bit	67108864 bit	67108864 bit	67108864 bit	67108864 bit
内存集成电路类型	EDO DRAM	EDO DRAM	EDO DRAM	EDO DRAM	EDO DRAM	EDO DRAM	EDO DRAM	EDO DRAM
内存宽度	4	4	4	4	4	4	4	4
功能数量	1	1	1	1	1	1	1	1
端口数量	1	1	1	1	1	1	1	1
端子数量	32	32	32	32	32	32	32	32
字数	16777216 words	16777216 words	16777216 words	16777216 words	16777216 words	16777216 words	16777216 words	16777216 words
字数代码	16000000	16000000	16000000	16000000	16000000	16000000	16000000	16000000
工作模式	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS
最高工作温度	70 °C	70 °C	70 °C	70 °C	70 °C	70 °C	70 °C	70 °C
组织	16MX4	16MX4	16MX4	16MX4	16MX4	16MX4	16MX4	16MX4
封装主体材料	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
封装形状	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
封装形式	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
认证状态	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
最大供电电压 (Vsup)	3.6 V	3.6 V	3.6 V	3.6 V	3.6 V	3.6 V	3.6 V	3.6 V
最小供电电压 (Vsup)	3 V	3 V	3 V	3 V	3 V	3 V	3 V	3 V
标称供电电压 (Vsup)	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V
表面贴装	YES	YES	YES	YES	YES	YES	YES	YES
技术	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS
温度等级	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL
端子形式	J BEND	J BEND	J BEND	J BEND	GULL WING	GULL WING	GULL WING	GULL WING
端子位置	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL

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