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IS61LV6416-8B

产品描述Standard SRAM, 64KX16, 8ns, CMOS, PBGA48,
产品类别存储    存储   
文件大小447KB,共8页
制造商Integrated Circuit Solution Inc
下载文档 详细参数 选型对比 全文预览

IS61LV6416-8B概述

Standard SRAM, 64KX16, 8ns, CMOS, PBGA48,

IS61LV6416-8B规格参数

参数名称属性值
是否Rohs认证不符合
厂商名称Integrated Circuit Solution Inc
包装说明FBGA, BGA48,6X8,30
Reach Compliance Codeunknown
最长访问时间8 ns
I/O 类型COMMON
JESD-30 代码R-PBGA-B48
JESD-609代码e0
内存密度1048576 bit
内存集成电路类型STANDARD SRAM
内存宽度16
端子数量48
字数65536 words
字数代码64000
工作模式ASYNCHRONOUS
最高工作温度70 °C
最低工作温度
组织64KX16
输出特性3-STATE
封装主体材料PLASTIC/EPOXY
封装代码FBGA
封装等效代码BGA48,6X8,30
封装形状RECTANGULAR
封装形式GRID ARRAY, FINE PITCH
并行/串行PARALLEL
电源3.3 V
认证状态Not Qualified
最大待机电流0.01 A
最小待机电流3 V
最大压摆率0.22 mA
标称供电电压 (Vsup)3.3 V
表面贴装YES
技术CMOS
温度等级COMMERCIAL
端子面层Tin/Lead (Sn/Pb)
端子形式BALL
端子节距0.75 mm
端子位置BOTTOM
Base Number Matches1

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IS61LV6416
FEATURES
64K x 16 HIGH-SPEED CMOS STATIC RAM
WITH 3.3V SUPPLY
• High-speed access time: 8, 10, 12, and 15 ns
• CMOS low power operation
— 250 mW (typical) operating
— 250 µW (typical) standby
• TTL compatible interface levels
• Single 3.3V power supply
• Fully static operation: no clock or refresh
required
• Three state outputs
• Data control for upper and lower bytes
• Industrial temperature available
DESCRIPTION
The
1+51
IS61LV6416 is a high-speed, 1,048,576-bit static
RAM organized as 65,536 words by 16 bits. It is fabricated
using
1+51
's high-performance CMOS technology. This highly
reliable process coupled with innovative circuit design
techniques, yields access times as fast as 8 ns with low power
consumption.
When
CE
is HIGH (deselected), the device assumes a standby
mode at which the power dissipation can be reduced down with
CMOS input levels.
Easy memory expansion is provided by using Chip Enable and
Output Enable inputs,
CE
and
OE.
The active LOW Write
Enable (WE) controls both writing and reading of the memory.
A data byte allows Upper Byte (UB) and Lower Byte (LB)
access.
The IS61LV6416 is packaged in the JEDEC standard 44-pin
400mil SOJ, 44-pin 400mil TSOP-2, and 48-pin 6*8mm TF-
BGA.
FUNCTIONAL BLOCK DIAGRAM
A0-A15
DECODER
64K x 16
MEMORY ARRAY
VCC
GND
I/O0-I/O7
Lower Byte
I/O8-I/O15
Upper Byte
I/O
DATA
CIRCUIT
COLUMN I/O
CE
OE
WE
UB
LB
CONTROL
CIRCUIT
ICSI reserves the right to make changes to its products at any time without notice in order to improve design and supply the best possible product. We assume no responsibility for any errors
which may appear in this publication. © Copyright 2000, Integrated Circuit Solution Inc.
Integrated Circuit Solution Inc.
SR013-0C
1

IS61LV6416-8B相似产品对比

IS61LV6416-8B IS61LV6416-8K IS61LV6416-8KI
描述 Standard SRAM, 64KX16, 8ns, CMOS, PBGA48, Standard SRAM, 64KX16, 8ns, CMOS, PDSO44, Standard SRAM, 64KX16, 8ns, CMOS, PDSO44,
是否Rohs认证 不符合 不符合 不符合
厂商名称 Integrated Circuit Solution Inc Integrated Circuit Solution Inc Integrated Circuit Solution Inc
包装说明 FBGA, BGA48,6X8,30 SOJ, SOJ44,.44 SOJ, SOJ44,.44
Reach Compliance Code unknown unknown unknown
最长访问时间 8 ns 8 ns 8 ns
I/O 类型 COMMON COMMON COMMON
JESD-30 代码 R-PBGA-B48 R-PDSO-J44 R-PDSO-J44
JESD-609代码 e0 e0 e0
内存密度 1048576 bit 1048576 bit 1048576 bit
内存集成电路类型 STANDARD SRAM STANDARD SRAM STANDARD SRAM
内存宽度 16 16 16
端子数量 48 44 44
字数 65536 words 65536 words 65536 words
字数代码 64000 64000 64000
工作模式 ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS
最高工作温度 70 °C 70 °C 85 °C
组织 64KX16 64KX16 64KX16
输出特性 3-STATE 3-STATE 3-STATE
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装代码 FBGA SOJ SOJ
封装等效代码 BGA48,6X8,30 SOJ44,.44 SOJ44,.44
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 GRID ARRAY, FINE PITCH SMALL OUTLINE SMALL OUTLINE
并行/串行 PARALLEL PARALLEL PARALLEL
电源 3.3 V 3.3 V 3.3 V
认证状态 Not Qualified Not Qualified Not Qualified
最大待机电流 0.01 A 0.01 A 0.015 A
最小待机电流 3 V 3 V 3 V
最大压摆率 0.22 mA 0.22 mA 0.23 mA
标称供电电压 (Vsup) 3.3 V 3.3 V 3.3 V
表面贴装 YES YES YES
技术 CMOS CMOS CMOS
温度等级 COMMERCIAL COMMERCIAL INDUSTRIAL
端子面层 Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
端子形式 BALL J BEND J BEND
端子节距 0.75 mm 1.27 mm 1.27 mm
端子位置 BOTTOM DUAL DUAL
Base Number Matches 1 1 1

 
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