BPW17N
Silicon NPN Phototransistor
Description
BPW17N is a silicon NPN epitaxial planar phototransis-
tor in a miniature plastic case with a
±
12
°
lens.
With a lead center to center spacing of 2.54mm and a
package width of 2.4mm the devices are easily stackable
on PC boards and assembled to arrays of unlimited size.
Due to its waterclear epoxy the device is sensitive to vis-
ible and near infrared radiation.
Features
D
Miniature T–
¾
clear plastic package with lens
D
Narrow viewing angle
ϕ
=
±
12
°
D
Insensitive against background light due to narrow
aperture
D
Suitable for 0.1” (2.54 mm) center to center spacing
D
Suitable for visible and near infrared radiation
D
Compatible with IR diode CQY37N
94 8639
Applications
Detector in electronic control and drive circuits
Absolute Maximum Ratings
T
amb
= 25
_
C
Parameter
Collector Emitter Voltage
Emitter Collector Voltage
Collector Current
Peak Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature Range
Soldering Temperature
Thermal Resistance Junction/Ambient
Test Conditions
Symbol
V
CEO
V
ECO
I
C
I
CM
P
tot
T
j
T
stg
T
sd
R
thJA
Value
32
5
50
100
100
100
–55...+100
260
450
Unit
V
V
mA
mA
mW
°
C
°
C
°
C
K/W
t
p
/T = 0.5, t
p
10 ms
T
amb
55
°
C
x
x
t
x
3s
TELEFUNKEN Semiconductors
Rev. A2, 15-Jul-96
1 (5)
BPW17N
Basic Characteristics
T
amb
= 25
_
C
Parameter
Collector Emitter Breakdown
Voltage
Collector Dark Current
Collector Emitter Capacitance
Collector Light Current
Angle of Half Sensitivity
Wavelength of Peak Sensitivity
Range of Spectral Bandwidth
Collector Emitter Saturation
Voltage
Turn–On Time
Turn–Off Time
Cut–Off Frequency
Test Conditions
I
C
= 1 mA
V
CE
= 20 V, E = 0
V
CE
= 5 V, f = 1 MHz, E=0
E
e
=1mW/cm
2
,
l
=950nm,
V
CE
=5V
Symbol
V
(BR)CEO
I
CEO
C
CEO
I
ca
Min
32
Typ
Max
Unit
V
nA
pF
mA
deg
nm
nm
V
0.5
1
8
1.0
±12
825
620...960
200
E
e
=1mW/cm
2
,
l
=950nm,
I
C
=0.1mA
V
S
=5V, I
C
=5mA, R
L
=100
W
V
S
=5V, I
C
=5mA, R
L
=100
W
V
S
=5V, I
C
=5mA, R
L
=100
W
l
p
l
0.5
V
CEsat
t
on
t
off
f
c
ϕ
0.3
4.8
5.0
120
m
s
m
s
kHz
Typical Characteristics
(T
amb
= 25
_
C unless otherwise specified)
125
P
tot
– Total Power Dissipation ( mW )
100
I
CEO
– Collector Dark Current ( nA )
10
4
10
3
V
CE
=20V
10
2
75
R
thJA
50
25
0
0
20
40
60
80
100
10
1
10
0
20
94 8235
40
60
80
100
94 8308
T
amb
– Ambient Temperature (
°C
)
T
amb
– Ambient Temperature (
°C
)
Figure 1. Total Power Dissipation vs. Ambient Temperature
Figure 2. Collector Dark Current vs. Ambient Temperature
2 (5)
TELEFUNKEN Semiconductors
Rev. A2, 15-Jul-96
BPW17N
C
CEO
– Collector Emitter Capacitance ( pF )
2.0
I
ca rel
– Relative Collector Current
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0
94 8239
20
16
f=1MHz
V
CE
=5V
E
e
=1mW/cm
2
l
=950nm
12
8
4
0
0.1
1
10
100
V
CE
– Collector Emitter Voltage ( V )
20
40
60
80
100
94 8240
T
amb
– Ambient Temperature (
°C
)
Figure 3. Relative Collector Current vs. Ambient Temperature
Figure 6. Collector Emitter Capacitance vs.
Collector Emitter Voltage
12
10
8
6
4
2
0
t
off
t
on
V
CE
=5V
R
L
=100
W
l
=950nm
1
0.1
0.01
l
=950nm
V
CE
=5V
0.001
0.01
94 8313
0.1
1
10
94 8238
t
on
/ t
off
– Turn on / Turn off Time (
m
s )
10
I
ca
– Collector Light Current ( mA )
0
4
8
12
16
E
e
– Irradiance ( mW / cm
2
)
I
C
– Collector Current ( mA )
Figure 4. Collector Light Current vs. Irradiance
10
I
ca
– Collector Light Current ( mA )
Figure 7. Turn On/Turn Off Time vs. Collector Current
S (
l
)
rel
– Relative Spectral Sensitivity
100
94 8241
1.0
0.8
0.6
0.4
0.2
0
400
l
=950nm
E
e
1
=1 mW/cm
2
0.5 mW/cm
2
0.2 mW/cm
2
0.1
0.1
94 8242
1
10
600
V
CE
– Collector Emitter Voltage ( V )
l
– Wavelength ( nm )
800
1000
Figure 5. Collector Light Current vs. Collector Emitter Voltage
Figure 8. Relative Spectral Sensitivity vs. Wavelength
TELEFUNKEN Semiconductors
Rev. A2, 15-Jul-96
3 (5)
BPW17N
0°
10
°
20
°
30°
S
rel
– Relative Sensitivity
40°
1.0
0.9
0.8
0.7
50°
60°
70°
80°
0.6
0.4
0.2
0
0.2
0.4
0.6
94 8243
Figure 9. Relative Radiant Sensitivity vs.
Angular Displacement
Dimensions in mm
96 12187
4 (5)
TELEFUNKEN Semiconductors
Rev. A2, 15-Jul-96
BPW17N
Ozone Depleting Substances Policy Statement
It is the policy of
TEMIC TELEFUNKEN microelectronic GmbH
to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems
with respect to their impact on the health and safety of our employees and the public, as well as their impact on
the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances ( ODSs).
The Montreal Protocol ( 1987) and its London Amendments ( 1990) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban
on these substances.
TEMIC TELEFUNKEN microelectronic GmbH
semiconductor division has been able to use its policy of
continuous improvements to eliminate the use of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency ( EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively.
TEMIC
can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain
such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer
application by the customer. Should the buyer use TEMIC products for any unintended or unauthorized
application, the buyer shall indemnify TEMIC against all claims, costs, damages, and expenses, arising out of,
directly or indirectly, any claim of personal damage, injury or death associated with such unintended or
unauthorized use.
TEMIC TELEFUNKEN microelectronic GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423
TELEFUNKEN Semiconductors
Rev. A2, 15-Jul-96
5 (5)
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