Datasheet> 器件分类 > 分立半导体> 二极管> SBYG10JG

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SBYG10JG: 产品描述Rectifier Diode, 1 Phase, 1 Element, 1.5A, 600V V(RRM), Silicon, DO-214AC, PLASTIC, SMA, 2 PIN; 产品类别分立半导体二极管; 文件大小165KB，共2页; 制造商Gulf Semiconductor; 官网地址http://www.gulfsemi.com/

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SBYG10JG概述

Rectifier Diode, 1 Phase, 1 Element, 1.5A, 600V V(RRM), Silicon, DO-214AC, PLASTIC, SMA, 2 PIN

SBYG10JG规格参数

参数名称	属性值
厂商名称	Gulf Semiconductor
包装说明	R-PDSO-C2
Reach Compliance Code	unknown
ECCN代码	EAR99
应用	FAST RECOVERY
配置	SINGLE
二极管元件材料	SILICON
二极管类型	RECTIFIER DIODE
最大正向电压 (VF)	1.15 V
JEDEC-95代码	DO-214AC
JESD-30 代码	R-PDSO-C2
最大非重复峰值正向电流	30 A
元件数量	1
相数	1
端子数量	2
最高工作温度	150 °C
最低工作温度	-50 °C
最大输出电流	1.5 A
封装主体材料	PLASTIC/EPOXY
封装形状	RECTANGULAR
封装形式	SMALL OUTLINE
最大重复峰值反向电压	600 V
最大反向电流	1 µA
表面贴装	YES
端子形式	C BEND
端子位置	DUAL
Base Number Matches	1

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SBYG10DG THRU SBYG10MG

SURFACE MOUNT FAST

SWITCHING RECTIFIER

VOLTAGE：200V to 1000V

CURRENT： 1.5A

FEATURE

For surface mounted application

High surge current capability

Glass passivated chip

High temperature soldering guaranteed

260℃/10sec/at terminals

SMA／DO-214AC

MECHANICAL DATA

Terminal：Plated Terminal, solderable per

MIL-STD 202E, method 208C

Case：Molded with UL-94 class V-0 recognized

Flame Retardant Epoxy

Polarity：color band denotes cathode end

Marking:

G10D G10G G10J G10K G10M

Dimensions in inches and (millimeters)

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

(single—phase, half

—wave,

60HZ, resistive or inductive load rating at 25℃, unless otherwise stated,

for capacitive load, derate current by 20％)

Symbol

Maximum Recurrent Peak Reverse Voltage

Maximum RMS Voltage

Maximum DC blocking Voltage

Maximum Average Forward Rectified Current

Peak Forward Surge Current 10ms single half sine-

wave superimposed on rated load

Maximum Forward Voltage at rated Forward current

Ta =25℃

Pulse energy in avalanche mode, non repetitive

(inductive load switch off) at I

(BR)R

=1A

Maximum DC Reverse Current

Ta =25℃

at rated DC blocking voltage

Ta =125℃

Typical Thermal Resistance

(Note 1)

(Note 2)

Operating and Storage Temperature Range

Note：

1. T

=const

2. mounted on epoxy-glass hard tissue

SBYG10

200

140

200

SBYG10

400

280

400

SBYG10

600

420

600

1.5

1.15

1.0

40.0

150

-50 to +150

SBYG10

800

560

800

SBYG10

1000

700

1000

units

μA

K/W

℃

Vrrm

Vrms

Vdc

If(av)

Ifsm

Rth(jl)

Rth(ja)

Tj, Tstg

Rev.A3

SBYG10JG相似产品对比

	SBYG10JG	SBYG10GG	SBYG10DG
描述	Rectifier Diode, 1 Phase, 1 Element, 1.5A, 600V V(RRM), Silicon, DO-214AC, PLASTIC, SMA, 2 PIN	Rectifier Diode, 1 Phase, 1 Element, 1.5A, 400V V(RRM), Silicon, DO-214AC, PLASTIC, SMA, 2 PIN	Rectifier Diode, 1 Phase, 1 Element, 1.5A, 200V V(RRM), Silicon, DO-214AC, PLASTIC, SMA, 2 PIN
厂商名称	Gulf Semiconductor	Gulf Semiconductor	Gulf Semiconductor
包装说明	R-PDSO-C2	R-PDSO-C2	R-PDSO-C2
Reach Compliance Code	unknown	unknown	unknown
ECCN代码	EAR99	EAR99	EAR99
应用	FAST RECOVERY	FAST RECOVERY	FAST RECOVERY
配置	SINGLE	SINGLE	SINGLE
二极管元件材料	SILICON	SILICON	SILICON
二极管类型	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE
最大正向电压 (VF)	1.15 V	1.15 V	1.15 V
JEDEC-95代码	DO-214AC	DO-214AC	DO-214AC
JESD-30 代码	R-PDSO-C2	R-PDSO-C2	R-PDSO-C2
最大非重复峰值正向电流	30 A	30 A	30 A
元件数量	1	1	1
相数	1	1	1
端子数量	2	2	2
最高工作温度	150 °C	150 °C	150 °C
最低工作温度	-50 °C	-50 °C	-50 °C
最大输出电流	1.5 A	1.5 A	1.5 A
封装主体材料	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
封装形状	RECTANGULAR	RECTANGULAR	RECTANGULAR
封装形式	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
最大重复峰值反向电压	600 V	400 V	200 V
最大反向电流	1 µA	1 µA	1 µA
表面贴装	YES	YES	YES
端子形式	C BEND	C BEND	C BEND
端子位置	DUAL	DUAL	DUAL
Base Number Matches	1	1	1

SBYG10JG

SBYG10JG概述

SBYG10JG规格参数

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