BDY26, 183 T2
BDY27, 184 T2
BDY28, 185 T2
NPN SILICON TRANSISTORS, DIFFUSED MESA
LF Large Signal Power Amplification
High Current Fast Switching
ABSOLUTE MAXIMUM RATINGS
Symbol
V
CEO
Collector-Emitter Voltage
Ratings
BDY26, 183T2
BDY27, 184T2
BDY28, 185T2
BDY26, 183T2
BDY27, 184T2
BDY28, 185T2
BDY26, 183T2
BDY27, 184T2
BDY28, 185T2
BDY26, 183T2
BDY27, 184T2
BDY28, 185T2
BDY26, 183T2
BDY27, 184T2
BDY28, 185T2
BDY26, 183T2
BDY27, 184T2
BDY28, 185T2
BDY26, 183T2
BDY27, 184T2
BDY28, 185T2
Value
180
200
250
300
400
500
10
6
Unit
V
V
CBO
V
EBO
I
C
I
B
P
TOT
T
J
T
Stg
Collector-Base Voltage
V
V
A
A
Watts
Emitter-Base Voltage
Collector Current
Base Current
3
Power Dissipation
Junction Temperature
Storage Temperature
@ T
C
= 25°
87.5
200
-65 to +200
°C
COMSET SEMICONDUCTORS
1/4
BDY26, 183 T2
BDY27, 184 T2
BDY28, 185 T2
THERMAL CHARACTERISTICS
Symbol
R
thJ-C
Ratings
Thermal Resistance, Junction to Case
BDY26, 183T2
BDY27, 184T2
BDY28, 185T2
Value
2
Unit
°C/W
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Collector-Emitter
Breakdown Voltage (*)
Test Condition(s)
BDY26, 183T2
BDY27, 184T2
BDY28A, 185T2A
BDY28B, 185T2B
BDY28C, 185T2C
BDY26, 183T2
BDY27, 184T2
BDY28, 185T2
BDY26
BDY27
BDY28
BDY26, 183T2
BDY27, 184T2
BDY28, 185T2
BDY26, 183T2
Min Typ Mx Unit
180
200
250
250
220
300
400
500
-
-
-
-
-
-
-
-
-
-
-
-
V
CEO(BR)
I
C
=50 mA, I
B
=0
-
-
-
-
-
-
-
-
1.0
V
V
(BR)CBO
Collector-Base Breakdown
Voltage (*)
Collector-Emitter Cutoff
Current
I
C
=3 mA
V
CE
=180 V
V
CE
=200 V
V
CE
=250 V
V
I
CEO
-
-
-
-
mA
I
EBO
Emitter-Base Cutoff Current
V
EB
=10 V
1.0
mA
V
CE
=250 V
V
BE
=0 V
-
-
I
CES
Collector-Emitter Cutoff
Current
V
CE
=300 V
V
BE
=0 V
V
CE
=400 V
V
BE
=0 V
BDY27, 184T2
-
-
1.0
mA
BDY28, 185T2
-
-
COMSET SEMICONDUCTORS
2/4
BDY26, 183 T2
BDY27, 184 T2
BDY28, 185 T2
Symbol
V
CE(SAT)
Ratings
Collector-Emitter saturation
Voltage (*)
Test Condition(s)
I
C
=2.0 A, I
B
=0.25 A
Min Typ Mx Unit
-
-
-
-
-
-
-
-
-
V
BE(SAT)
Base-Emitter Voltage (*)
I
C
=2.0 A, I
B
=0.25 A
BDY26, 183T2
BDY27, 184T2
BDY28, 185T2
BDY26, 183T2
BDY27, 184T2
BDY28, 185T2
A
B
C
A
B
C
BDY26, 183T2
BDY27, 184T2
BDY28, 185T2
BDY26, 183T2
BDY27, 184T2
BDY28, 185T2
BDY26, 183T2
BDY27, 184T2
BDY28, 185T2
-
-
-
-
-
-
55
65
90
20
45
82
-
0.6
V
1.2
-
-
-
45
90
100
-
V
V
CE
=4 V, I
C
=1 A
h
21E
Static Forward Current
transfer ratio (*)
V
CE
=4 V, I
C
=2 A
15
30
75
10
-
f
T
Transition Frequency
V
CE
=15 V, I
C
=0.5 A,
f=10 MHz
MHz
t
d
+ t
r
Turn-on time
I
C
=5 A,
I
B
=1 A
I
C
=5 A,
I
B1
=1 A,
I
B2
=-0.5 A
-
0.3
0.5
µs
t
s
+ t
f
Turn-off time
-
1.5
2.0
µs
(*) Pulse Width
≈
300
µs,
Duty Cycle
∠
2.0%
COMSET SEMICONDUCTORS
3/4
BDY26, 183 T2
BDY27, 184 T2
BDY28, 185 T2
MECHANICAL DATA CASE TO-3
DIMENSIONS
mm
A
25,45
B
38,8
C
30,09
D
17,11
E
9,78
G
11,09
H
8,33
L
1,62
M
19,43
N
1
P
4,08
inches
1
1,52
1,18
0,67
0,39
0,45
0,34
0,06
0,79
0,04
0,16
Pin 1 :
Pin 2 :
Case :
Base
Collector
Emitter
COMSET SEMICONDUCTORS
4/4
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
