FM120-N THRU FM1100-N
CHIP SCHOTTKY BARRIER RECTIFIER
1.0A Surface Mount Schottky Barrier Rectifiers - 20V-100V
SOD-323
0.106 (2.7)
0.091 (2.3)
0.012(0.3) Typ.
0.057 (1.45)
0.041 (1.05)
0.047 (1.2)
0.031 (0.8)
0.016(0.4) Typ.
0.016(0.4) Typ.
FEATURES
•
Batch process design, excellent power dissipation offers
•
•
•
•
•
•
•
•
•
better reverse leakage current and thermal resistance.
Low profile surface mounted application in order to
optimize board space.
Low power loss, high efficiency.
High current capability, low forward voltage drop.
High surge capability.
Guardring for overvoltage protection.
Very tiny plastic SMD package.
Ultra high-speed switching.
Silicon epitaxial planar chip, metal silicon junction.
Lead-free parts meet environmental standards of
MIL-STD-19500 /228
MECHANICAL DATA
•
Epoxy : UL94-V0 rated flame retardant
•
Case : Molded plastic, SOD-323
•
Terminals :Plated terminals, solderable per MIL-STD-750,
Method 2026
•
Polarity : Indicated by cathode band
•
Mounting Position : Any
•
Weight : Approximated 0.008 gram
MAXIMUM RATING
PARAMETER
Forward rectified current
Forward surge current
(AT T
A
=25
o
C unless otherwise noted)
CONDITIONS
See Fig.1
8.3ms single half sine-wave superimposed on
rate load (JEDEC methode)
V
R
= V
RRM
T
A
= 25
O
C
V
R
= V
RRM
T
A
= 125 C
Junction to ambient
f=1MHz and applied 4V DC reverse voltage
O
Symbol
I
O
I
FSM
I
R
R
èJA
C
J
T
STG
MIN.
TYP.
MAX.
1.0
30
0.5
10
UNIT
A
A
Reverse current
Thermal resistance
Diode junction capacitance
Storage temperature
mA
O
90
120
-65
+175
C/W
pF
O
C
SYMBOLS
FM120-N
FM130-N
FM140-N
FM150-N
FM160-N
FM180-N
FM1100-N
*1
V
RRM
(V)
20
30
40
50
60
80
100
V
RMS
*2
(V)
14
21
28
35
42
56
70
*3
V
R
(V)
20
30
40
50
60
80
100
*4
V
F
(V)
Operating
temperature
T
J
, (
O
C)
*1 Repetitive peak reverse voltage
-55 to +125
0.55
*2 RMS voltage
*3 Continuous reverse voltage
0.70
-55 to +150
0.85
*4 Maximum forward voltage
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1
FM120-N THRU FM1100-N
CHIP SCHOTTKY BARRIER RECTIFIER
Rating and characteristic curves (FM120-N THRU FM1100-N)
FIG.1-TYPICAL FORWARD CURRENT DERATING CURVE
AVERAGE FORWARD CURRENT,(A)
FIG.2-TYPICAL FORWARD
CHARACTERISTICS
1.2
1.0
50
INSTANTANEOUS FORWARD CURRENT,(A)
15
FM
0-
N
0.8
12
FM
0.6
0.4
0.2
0
0
20
40
60
80
10
3.0
1.0
FM
12
0-
N
~F
M
14
0
11
FM
N~
0-
N
0-
100
120
140
160
180
200
-N
00
11
FM
N~
0-
18
FM
AMBIENT TEMPERATURE,( C)
FM
15
0-
N
~F
M
16
0-
N
FIG.3-MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
30
1
FM
N~
0-
40
-N
T
J
=25 C
Pulse Width 300us
1% Duty Cycle
0.1
PEAK FORWARD SURGE CURRENT,(A)
24
.01
.1
.3
.5
.7
.9
1.1
1.3
1.5
18
T
J
=25 C
8.3ms Single Half
Sine Wave
JEDEC method
FORWARD VOLT
AGE,(V)
12
6
FIG.5 - TYPICAL REVERSE
0
1
5
10
50
100
CHARACTERISTICS
100
NUMBER OF CYCLES AT 60Hz
FIG.4-TYPICAL JUNCTION CAPACITANCE
350
300
250
200
150
100
50
0
JUNCTION CAPACITANCE,(pF)
REVERSE LEAKAGE CURRENT, (mA)
10
1.0
T
J
=75 C
.1
T
J
=25 C
.01
.05
.1
.5
1
5
10
50
100
.01
0
20
40
60
80
100 120 140
REVERSE VOLTAGE,(V)
PERCENT OF RATED PEAK REVERSE VOLTAGE,(%)
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