Datasheet> 器件分类 > 嵌入式处理器和控制器> 微控制器和处理器> 5962H9563801VYA

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5962H9563801VYA: 产品描述Microcontroller, 8-Bit, 8051 CPU, 20MHz, CMOS, CDFP44, 0.670 X 0.800 INCH, 0.025 INCH PITCH, DFP-44; 产品类别嵌入式处理器和控制器微控制器和处理器; 文件大小217KB，共30页; 制造商Cobham PLC

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5962H9563801VYA概述

Microcontroller, 8-Bit, 8051 CPU, 20MHz, CMOS, CDFP44, 0.670 X 0.800 INCH, 0.025 INCH PITCH, DFP-44

5962H9563801VYA规格参数

参数名称	属性值
包装说明	0.670 X 0.800 INCH, 0.025 INCH PITCH, DFP-44
Reach Compliance Code	unknown
ECCN代码	3A001.A.1.A
具有ADC	NO
地址总线宽度	16
位大小	8
CPU系列	8051
最大时钟频率	20 MHz
DAC 通道	NO
DMA 通道	NO
外部数据总线宽度	8
JESD-30 代码	R-CDFP-F44
JESD-609代码	e0
长度	20.32 mm
I/O 线路数量	32
端子数量	44
最高工作温度	125 °C
最低工作温度	-55 °C
PWM 通道	YES
封装主体材料	CERAMIC, METAL-SEALED COFIRED
封装代码	QFF
封装等效代码	TPAK44,1.67,25
封装形状	RECTANGULAR
封装形式	FLATPACK
电源	5 V
认证状态	Qualified
RAM（字节）	256
ROM（单词）	0
筛选级别	MIL-PRF-38535 Class V
座面最大高度	2.794 mm
速度	20 MHz
最大压摆率	120 mA
最大供电电压	5.5 V
最小供电电压	4.5 V
标称供电电压	5 V
表面贴装	YES
技术	CMOS
温度等级	MILITARY
端子面层	TIN LEAD
端子形式	FLAT
端子节距	0.635 mm
端子位置	DUAL
总剂量	1M Rad(Si) V
宽度	17.018 mm
uPs/uCs/外围集成电路类型	MICROCONTROLLER
Base Number Matches	1

文档解析

这份文档是一份关于数字微电路的标准微电路绘图（Standard Microcircuit Drawing，简称SMD），具体是针对一个8位的辐射加固微控制器。文档包含了多个修订层级，技术规格，测试条件，以及与军事标准相关的详细信息。以下是一些值得关注的技术信息：

产品保证等级：文档提到了高可靠性（设备类别Q和M）和太空应用（设备类别V）两种产品保证等级。
辐射特征：包括总剂量辐射（Total dose radiation）和单粒子效应（Single Event Phenomena，SEP），其中提到了对于不同级别的辐射硬度保证（Radiation Hardness Assurance，RHA）的要求。
电气性能特性：文档详细列出了微控制器的电气性能参数，例如输入电压、输出电压、输入电流、功耗、时钟周期等。
测试条件和方法：包括了对微电路进行测试的条件和方法，如MIL-STD-883标准中定义的方法。
修订历史：文档记录了各个修订版本的日期和更改内容，显示了产品规格随时间的演变。
封装和引脚布局：提供了不同封装类型（如双列直插式、四平包装等）的详细尺寸和引脚功能。
适用文档：列出了与此微电路相关的政府规格、标准和手册，例如MIL-PRF-38535、MIL-STD-883等。
合格和质量控制：包括了对设备进行合格性检验和质量控制的要求，如抽样、检查、老化测试等。
供应链信息：提供了合格供应商列表（QML-38535）和军事手册（MIL-HDBK-103）的信息，这些供应商已经提交了符合性的证明。
附加信息：文档还提供了一些附加信息，如RHA干扰水平、测试条件、干扰和瞬态的数量等。

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REVISIONS

LTR

DESCRIPTION

Changes in accordance with NOR 5962-R003-98.

Changes in accordance with NOR 5962-R042-98.

Add radiation features in section 1.4. In table IA: Change test conditions of V

for I

and I

tests; add I

and I

tests for XTAL1 input; add footnote 7/ to t

CHCX

CLCX

, t

CLCH

, and t

CHCL

; change footnote 6/. Add pin connections for case outline

Y in figure 5. Editorial changes throughout. - TVN

Update the boilerplate in accordance with the requirements of MIL-PRF-38535.

– TVN

Make boilerplate corrections on sheets 2, 4, and 23 - 29. Remove rescinded

JEDEC Std 17 and replace with EIA/JESD 78 on sheet 4. – CFS

Change the SEU LET threshold from a minimum of 14 MeV/(mg/cm ) to

20 MeV/(mg/cm ). – CFS

Update boilerplate to current MIL-PRF-38535 requirements, including Radiation

Hardness Assurance boilerplate paragraphs. – CFS

08-01-23

Thomas M. Hess

DATE (

YR-MO-DA

)

97-10-31

98-02-26

99-07-26

APPROVED

Monica L. Poelking

01-04-11

02-11-06

03-06-12

Thomas M. Hess

REV

SHEET

REV

SHEET

REV STATUS

OF SHEETS

REV

SHEET

PMIC N/A

PREPARED BY

Thomas M. Hess

CHECKED BY

Thomas M. Hess

APPROVED BY

Monica L. Poelking

DRAWING APPROVAL DATE

95-12-13

REVISION LEVEL

STANDARD

MICROCIRCUIT

DRAWING

THIS DRAWING IS AVAILABLE

FOR USE BY ALL

DEPARTMENTS

AND AGENCIES OF THE

DEPARTMENT OF DEFENSE

AMSC N/A

DEFENSE SUPPLY CENTER COLUMBUS

COLUMBUS, OHIO 43218-3990

http://www.dscc.dla.mil

MICROCIRCUIT, DIGITAL, RADIATION HARDENED,

8-BIT MICROCONTROLLER, MONOLITHIC SILICON

SIZE

CAGE CODE

SHEET

67268

5962-95638

DSCC FORM 2233

APR 97

5962-E135-08

3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified in

MIL-PRF-38535 and herein for device classes Q and V or MIL-PRF-38535, appendix A and herein for device class M.

3.2.1 Case outlines. The case outlines shall be in accordance with 1.2.4 herein and on figure 1.

3.2.2 Terminal connections. The terminal connections shall be as specified on figure 2.

3.2.3 Block diagram. The block diagram shall be as specified on figure 3.

3.2.4 Test circuit and switching waveforms. The test circuit and switching waveforms shall be as specified on figures 4.

3.2.5 Radiation exposure connections. The radiation exposure connections shall be as specified on figure 5.

3.3 Electrical performance characteristics and postirradiation parameter limits. Unless otherwise specified herein, the

electrical performance characteristics and postirradiation parameter limits are as specified in table IA and shall apply over the full

case operating temperature range.

3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table II. The electrical

tests for each subgroup are defined in table IA.

3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturer's PIN may also be

marked. For packages where marking of the entire SMD PIN number is not feasible due to space limitations, the manufacturer

has the option of not marking the "5962-" on the device. For RHA product using this option, the RHA designator shall still be

marked. Marking for device classes Q and V shall be in accordance with MIL-PRF-38535. Marking for device class M shall be

in accordance with MIL-PRF-38535, appendix A.

3.5.1 Certification/compliance mark. The certification mark for device classes Q and V shall be a "QML" or "Q" as required in

MIL-PRF-38535. The compliance mark for device class M shall be a "C" as required in MIL-PRF-38535, appendix A.

3.6 Certificate of compliance. For device classes Q and V, a certificate of compliance shall be required from a QML-38535

listed manufacturer in order to supply to the requirements of this drawing (see 6.6.1 herein). For device class M, a certificate of

compliance shall be required from a manufacturer in order to be listed as an approved source of supply in MIL-HDBK-103 (see

6.6.2 herein). The certificate of compliance submitted to DSCC-VA prior to listing as an approved source of supply for this

drawing shall affirm that the manufacturer's product meets, for device classes Q and V, the requirements of MIL-PRF-38535 and

herein or for device class M, the requirements of MIL-PRF-38535, appendix A and herein.

3.7 Certificate of conformance. A certificate of conformance as required for device classes Q and V in MIL-PRF-38535 or for

device class M in MIL-PRF-38535, appendix A shall be provided with each lot of microcircuits delivered to this drawing.

3.8 Notification of change for device class M. For device class M, notification to DSCC-VA of change of product (see 6.2

herein) involving devices acquired to this drawing is required for any change that affects this drawing.

3.9 Verification and review for device class M. For device class M, DSCC, DSCC's agent, and the acquiring activity retain the

option to review the manufacturer's facility and applicable required documentation. Offshore documentation shall be made

available onshore at the option of the reviewer.

3.10 Microcircuit group assignment for device class M. Device class M devices covered by this drawing shall be in

microcircuit group number 105 (see MIL-PRF-38535, appendix A).

STANDARD

MICROCIRCUIT DRAWING

DEFENSE SUPPLY CENTER COLUMBUS

COLUMBUS, OHIO 43218-3990

DSCC FORM 2234

APR 97

SIZE

REVISION LEVEL

5962-95638

SHEET

5962H9563801VYA相似产品对比

	5962H9563801VYA	SDP137UHG	5962H9563801QYA	5962H9563801QYC	5962H9563801Q9A
描述	Microcontroller, 8-Bit, 8051 CPU, 20MHz, CMOS, CDFP44, 0.670 X 0.800 INCH, 0.025 INCH PITCH, DFP-44	MICROCIRCUIT, LINEAR, ADJUSTABLE VOLTAGE REGULATOR, MONOLITHIC SILICON	Microcontroller, 8-Bit, 8051 CPU, 20MHz, CMOS, CDFP44, 0.670 X 0.800 INCH, 0.025 INCH PITCH, DFP-44	Microcontroller, 8-Bit, 8051 CPU, 20MHz, CMOS, CDFP44, 0.670 X 0.800 INCH, 0.025 INCH PITCH, DFP-44	Microcontroller, 8-Bit, 8051 CPU, 20MHz, CMOS, DIE-54
包装说明	0.670 X 0.800 INCH, 0.025 INCH PITCH, DFP-44	-	0.670 X 0.800 INCH, 0.025 INCH PITCH, DFP-44	QFF, TPAK44,1.67,25	DIE, DIE OR CHIP
Reach Compliance Code	unknown	-	unknown	unknown	unknown
ECCN代码	3A001.A.1.A	-	3A001.A.1.A	3A001.A.1.A	3A001.A.1.A
具有ADC	NO	-	NO	NO	NO
地址总线宽度	16	-	16	16	16
位大小	8	-	8	8	8
CPU系列	8051	-	8051	8051	8051
最大时钟频率	20 MHz	-	20 MHz	20 MHz	20 MHz
DAC 通道	NO	-	NO	NO	NO
DMA 通道	NO	-	NO	NO	NO
外部数据总线宽度	8	-	8	8	8
JESD-30 代码	R-CDFP-F44	-	R-CDFP-F44	R-CDFP-F44	S-XUUC-N54
JESD-609代码	e0	-	e0	e4	e0
长度	20.32 mm	-	20.32 mm	20.32 mm	-
I/O 线路数量	32	-	32	32	32
端子数量	44	-	44	44	54
最高工作温度	125 °C	-	125 °C	125 °C	125 °C
最低工作温度	-55 °C	-	-55 °C	-55 °C	-55 °C
PWM 通道	YES	-	YES	YES	YES
封装主体材料	CERAMIC, METAL-SEALED COFIRED	-	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	UNSPECIFIED
封装代码	QFF	-	QFF	QFF	DIE
封装等效代码	TPAK44,1.67,25	-	TPAK44,1.67,25	TPAK44,1.67,25	DIE OR CHIP
封装形状	RECTANGULAR	-	RECTANGULAR	RECTANGULAR	SQUARE
封装形式	FLATPACK	-	FLATPACK	FLATPACK	UNCASED CHIP
电源	5 V	-	5 V	5 V	5 V
认证状态	Qualified	-	Qualified	Qualified	Qualified
RAM（字节）	256	-	256	256	256
筛选级别	MIL-PRF-38535 Class V	-	MIL-PRF-38535 Class Q	MIL-PRF-38535 Class Q	MIL-PRF-38535 Class Q
座面最大高度	2.794 mm	-	2.794 mm	2.794 mm	-
速度	20 MHz	-	20 MHz	20 MHz	20 MHz
最大压摆率	120 mA	-	120 mA	120 mA	120 mA
最大供电电压	5.5 V	-	5.5 V	5.5 V	5.5 V
最小供电电压	4.5 V	-	4.5 V	4.5 V	4.5 V
标称供电电压	5 V	-	5 V	5 V	5 V
表面贴装	YES	-	YES	YES	YES
技术	CMOS	-	CMOS	CMOS	CMOS
温度等级	MILITARY	-	MILITARY	MILITARY	MILITARY
端子面层	TIN LEAD	-	TIN LEAD	GOLD	TIN LEAD
端子形式	FLAT	-	FLAT	FLAT	NO LEAD
端子节距	0.635 mm	-	0.635 mm	0.635 mm	-
端子位置	DUAL	-	DUAL	DUAL	UPPER
总剂量	1M Rad(Si) V	-	1M Rad(Si) V	1M Rad(Si) V	-
宽度	17.018 mm	-	17.018 mm	17.018 mm	-
uPs/uCs/外围集成电路类型	MICROCONTROLLER	-	MICROCONTROLLER	MICROCONTROLLER	MICROCONTROLLER
Base Number Matches	1	-	1	1	-

5962H9563801VYA

5962H9563801VYA概述

5962H9563801VYA规格参数

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5962H9563801VYA相似产品对比

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