Product Bulletin JANTX4N22AU
September 1996
Surface Mount Optically Coupled Isolators
Types JANTX, JANTXV, 4N22AU, 4N23AU, 4N24AU
.058 (1.47)
Features
•
JANTX, JANTXV qualified per MIL-
•
Surface Mountable
•
1 kV Electrical Isolation
•
Base contact provided for
Description
The 4N22AU, 4N23AU, and 4N24AU
series are DESC qualified, surface
mount optically coupled isolators. High
reliability processing on the devices is
performed in accordance with MIL-PRF-
19500/486.
Each device in the series consists of an
infrared emitting diode and an NPN
silicon phototransistor mounted in a
hermetically sealed ceramic surface
mount package.
Typical screening and lot acceptance
tests are provided on page 13-4. The
burn-in condition is V
CE
= 10 V, I
F
= 40
mA, P
D
= 275 mW, T
A
= 25
o
C. Refer to
MIL-PRF-19500/486 for complete
requirements.
When ordering parts without processing,
do not use a JAN prefix.
PRF-19500/486
Absolute Maximum Ratings
(T
A
= 25
o
C unless otherwise noted)
Input-to-Output Isolation Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ± 1.0 kVDC
(1)
Storage and Operating Temperature Range. . . . . . . . . . . . . . . . . . -65
o
C to +125
o
C
Soldering Temperature (vapor phase reflow) . . . . . . . . . . . . . . . . . . . . . . . . . . 215
o
C
Soldering Temperature (heated collet for 5 sec) . . . . . . . . . . . . . . . . . . . . . . . 260
o
C
Input Diode
Forward DC Current (65
o
C or below) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40 mA
(2)
Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.0 V
Peak Forward Current (1
µs
pulse width, 300 pps) . . . . . . . . . . . . . . . . . . . . . . 1.00 A
Output Sensor
Continuous Collector Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 mA
Collector-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35 V
Collector-Base Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35 V
Emitter-Base Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.0 V
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300 mW
(3)
Notes:
(1) Measured with input diode leads shorted together and output leads shorted together.
(2) Derate linearly 0.67 mA/
o
C above 65
o
C.
(3) Derate linearly 3.0 mW/
o
C above 25
o
C.
conventional transistor biasing
Optek Technology, Inc.
1215 W. Crosby Road
Carrollton, Texas 75006
15-22
(972)323-2200
Fax (972)323-2396
Types JANTX, JANTXV, 4N22AU, 4N23AU, 4N24AU
Electrical Characteristics
(T
A
= 25
o
C unless otherwise noted)
Symbol
Input Diode
Forward Voltage
V
F
0.80
1.00
0.70
I
R
Reverse Current
1.30
1.50
1.20
100
V
V
V
µA
I
F
= 10.0 mA
I
F
= 10.0 mA, T
A
= -55
o
C
I
F
= 10.0 mA, T
A
= 100
o
C
V
R
= 2.0 V
Parameter
Type
Min
Typ
Max
Units
Test Conditions
Output Phototransistor
V
(BR)CBO
Collector-Base Breakdown Voltage
V
(BR)CEO
Collector-Emitter Breakdown Voltage
V
(BR)EBO
Emitter-Base Breakdown Voltage
I
C(OFF)
Collector-Emitter Dark Current
35
35
4.0
100
100
V
V
V
nA
µA
I
C
= 100
µA,
I
E
= 0, I
F
= 0
I
C
= 1.0 mA, I
B
= 0, I
F
= 0
I
E
= 100
µA,
I
C =
0, I
F
= 0
V
CE
= 20 V, I
B
= 0, I
F
= 0
V
CE
= 20 V, I
B
= 0, I
F
= 0, T
A
= 100
o
C
Coupled
On-State Collector Current
0.15
2.50
4N22AU
1.00
1.00
0.20
6.00
4N23AU
2.50
2.50
I
C(ON)
0.40
10.00
4N24AU
4.00
4.00
Collector-Emitter Saturation
V
CE(SAT)
Voltage
DC Current Gain
h
FE
R
IO
C
IO
t
r
Resistance (Input to Output)
Capacitance (Input to Output)
Output Rise Time
4N22AU
4N23AU
4N24AU
4N22AU
4N23AU
4N24AU
4N22AU
4N23AU
4N24AU
4N22AU
4N23AU
4N24AU
200
300
400
10
11
5.0
15.0
15.0
20.0
15.0
15.0
20.0
µs
µs
µs
µs
µs
µs
Ω
pF
0.30
0.30
0.30
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
V
CE
= 5.0 V, I
B
= 0, I
F
= 2.0 mA
V
CE
= 5.0 V, I
B
= 0, I
F
= 10.0 mA
V
CE
= 5.0 V, I
B
= 0, I
F
= 10.0 mA, T
A
= -55
o
C
V
CE
= 5.0 V, I
B
= 0, I
F
= 10.0 mA, T
A
= 100
o
C
V
CE
= 5.0 V, I
B
= 0, I
F
= 2.0 mA
V
CE
= 5.0 V, I
B
= 0, I
F
= 10.0 mA
V
CE
= 5.0 V, I
B
= 0, I
F
= 10.0 mA, T
A
= -55
o
C
V
CE
= 5.0 V, I
B
= 0, I
F
= 10.0 mA, T
A
= 100
o
C
V
CE
= 5.0 V, I
B
= 0, I
F
= 2.0 mA
V
CE
= 5.0 V, I
B
= 0, I
F
= 10.0 mA
V
CE
= 5.0 V, I
B
= 0, I
F
= 10.0 mA, T
A
= -55
o
C
V
CE
= 5.0 V, I
B
= 0, I
F
= 10.0 mA, T
A
= 100
o
C
I
C
= 2.5 mA, I
B
= 0, I
F
= 20.0 mA
I
C
= 5.0 mA, I
B
= 0, I
F
= 20.0 mA
I
C
= 10.0 mA, I
B
= 0, I
F
= 20.0 mA
V
CE
= 5.0 V, I
C
= 10.0 mA, I
F
= 0 mA
V
IO
=
±
1000 Vdc
(1)
V
IO
= 0.0 V, f = 1.0 MHz
(1)
V
V
CC
= 10.0 V, I
F
= 10.0 mA, R
L
= 100
Ω
Output Fall Time
t
f
Optek Technology, Inc.
1215 W. Crosby Road
Carrollton, Texas 75006
15-23
(972) 323-2200
Fax (972) 323-2396
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