电子工程世界电子工程世界电子工程世界

关键词

搜索

型号

搜索

GBU8A

产品描述6 A, 50 V, SILICON, BRIDGE RECTIFIER DIODE
产品类别半导体    分立半导体   
文件大小38KB,共1页
制造商重庆平伟实业
下载文档 选型对比 全文预览

GBU8A在线购买

供应商 器件名称 价格 最低购买 库存  
GBU8A - - 点击查看 点击购买

GBU8A概述

6 A, 50 V, SILICON, BRIDGE RECTIFIER DIODE

文档预览

下载PDF文档
CHONGQING PINGYANG ELECTRONICS CO.,LTD.
GBU8A THRU GBU8M
GLASS PASSIVATED BRIDGE RECTIFIER
VOLTAGE:50-1000V
CURRENT:8.0A
FEATURES
·Low
leakage
·Low
forward voltage
·Surge
overload ratings-200 Amperes
GBU
MECHANICAL DATA
·Case:
Molded plastic
·Epoxy:
UL 94V-0 rate flame retardant
·Lead:
MIL-STD- 202E, Method 208 guaranteed
·Polarity:
Symbols molded or marked on body
·Mounting
position:
Any
·Weight:
6.6 grams
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRONICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz,resistive or inductive load.
For capacitive load, derate current by 20%.
SYMBOL
GBU8A GBU8B GBU8D GBU8G GBU8J GBU8K GBU8M
units
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Bridge Input Voltage
Maximum DC Blocking Voltage
Maximum Average Forward
Current at T
C
=100°C
rectified Output
V
RRM
V
RMS
V
DC
I
o
I
FSM
V
F
50
100
200
400
600
800
1000
35
50
70
100
140
200
280
400
420
600
560
800
700
1000
V
V
V
A
A
V
µA
8.0
200
1.0
5.0
Peak Forward Surge Current 8.3ms single half
sine-wave superimposed on rate load (JEDEC
method)
Maximum Forward Voltage Drop per element at
4.0 A DC
Maximum DC Reverse Current
at Rated DC Blocking Voltage
per element
@ T
A
=25°C
I
R
@ T
A
=125°C
500
240
60
2.7
I
2
t
I
2
t Rating for Fusing (t<8.3ms)
C
J
Typical Junction Capacitance per Element(Note
1)
Typical Thermal Resistance, Junction to Case
R
θJA
(Note 2)
Notes: 1.
Measured at 1.0 MHz and applied reverse voltage of 4.0V DC.
A
2
S
pF
°C/W
2. Thermal resistance from junction to case per element. Unit mounted on 150 x 150 x 1.6mm copper plate heat sink.
PDF
文件½用
"pdfFactory Pro"
试用版本创建
www.fineprint.cn

GBU8A相似产品对比

GBU8A GBU8M GBU8K GBU8J GBU8G GBU8D GBU8B
描述 6 A, 50 V, SILICON, BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE 6 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE 6 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE 8 A, 400 V, SILICON, BRIDGE RECTIFIER DIODE 8 A, SILICON, BRIDGE RECTIFIER DIODE 8 A, 100 V, SILICON, BRIDGE RECTIFIER DIODE

技术资料推荐更多

 
EEWorld订阅号

 
EEWorld服务号

 
汽车开发圈

 
机器人开发圈

About Us 关于我们 客户服务 联系方式 器件索引 网站地图 最新更新 手机版

站点相关: 大学堂 TI培训 Datasheet 电子工程 索引文件: 703  1826  733  605  1568  18  54  34  21  56 

器件索引   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z

北京市海淀区中关村大街18号B座15层1530室 电话:(010)82350740 邮编:100190

电子工程世界版权所有 京B2-20211791 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号 Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved