2SB541,2SB541 pdf中文资料,2SB541引脚图,2SB541电路-Datasheet-电子工程世界

2SB541: 产品描述Power Bipolar Transistor, 8A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-3, Metal, 2 Pin,; 产品类别分立半导体晶体管; 文件大小94KB，共3页; 制造商NEC(日电)

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2SB541概述

Power Bipolar Transistor, 8A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-3, Metal, 2 Pin,

2SB541规格参数

参数名称	属性值
Reach Compliance Code	unknown
外壳连接	COLLECTOR
最大集电极电流 (IC)	8 A
集电极-发射极最大电压	100 V
配置	SINGLE
最小直流电流增益 (hFE)	20
JEDEC-95代码	TO-3
JESD-30 代码	O-MBFM-P2
元件数量	1
端子数量	2
最高工作温度	150 °C
封装主体材料	METAL
封装形状	ROUND
封装形式	FLANGE MOUNT
极性/信道类型	PNP
功耗环境最大值	80 W
认证状态	Not Qualified
表面贴装	NO
端子形式	PIN/PEG
端子位置	BOTTOM
晶体管应用	AMPLIFIER
晶体管元件材料	SILICON
标称过渡频率 (fT)	7 MHz
VCEsat-Max	2 V
Base Number Matches	1

2SB541相似产品对比

	2SB541	2SB541R	2SB541S	2SB541Q	2SD388R	2SD388S	2SD388Q	2SD388
描述	Power Bipolar Transistor, 8A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-3, Metal, 2 Pin,	Power Bipolar Transistor, 8A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-3, Metal, 2 Pin,	Power Bipolar Transistor, 8A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-3, Metal, 2 Pin,	Power Bipolar Transistor, 8A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-3, Metal, 2 Pin,	Power Bipolar Transistor, 8A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-3, Metal, 2 Pin,	Power Bipolar Transistor, 8A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-3, Metal, 2 Pin,	Power Bipolar Transistor, 8A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-3, Metal, 2 Pin,	Power Bipolar Transistor, 8A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-3, Metal, 2 Pin,
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown	unknown	unknown	unknown
外壳连接	COLLECTOR	COLLECTOR	COLLECTOR	COLLECTOR	COLLECTOR	COLLECTOR	COLLECTOR	COLLECTOR
最大集电极电流 (IC)	8 A	8 A	8 A	8 A	8 A	8 A	8 A	8 A
集电极-发射极最大电压	100 V	100 V	100 V	100 V	100 V	100 V	100 V	100 V
配置	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
最小直流电流增益 (hFE)	20	60	40	100	60	40	100	20
JEDEC-95代码	TO-3	TO-3	TO-3	TO-3	TO-3	TO-3	TO-3	TO-3
JESD-30 代码	O-MBFM-P2	O-MBFM-P2	O-MBFM-P2	O-MBFM-P2	O-MBFM-P2	O-MBFM-P2	O-MBFM-P2	O-MBFM-P2
元件数量	1	1	1	1	1	1	1	1
端子数量	2	2	2	2	2	2	2	2
最高工作温度	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C
封装主体材料	METAL	METAL	METAL	METAL	METAL	METAL	METAL	METAL
封装形状	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND
封装形式	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT
极性/信道类型	PNP	PNP	PNP	PNP	NPN	NPN	NPN	NPN
功耗环境最大值	80 W	80 W	80 W	80 W	80 W	80 W	80 W	80 W
认证状态	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
表面贴装	NO	NO	NO	NO	NO	NO	NO	NO
端子形式	PIN/PEG	PIN/PEG	PIN/PEG	PIN/PEG	PIN/PEG	PIN/PEG	PIN/PEG	PIN/PEG
端子位置	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM
晶体管应用	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER
晶体管元件材料	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
标称过渡频率 (fT)	7 MHz	7 MHz	7 MHz	7 MHz	9 MHz	9 MHz	9 MHz	9 MHz
VCEsat-Max	2 V	2 V	2 V	2 V	2 V	2 V	2 V	2 V
Base Number Matches	1	1	1	1	1	1	1	1

推荐资源

器件捷径: 00 01 02 03 04 05 06 07 08 09 0A 0C 0F 0J 0L 0M 0R 0S 0T 0Z 10 11 12 13 14 15 16 17 18 19 1A 1B 1C 1D 1E 1F 1H 1K 1M 1N 1P 1S 1T 1V 1X 1Z 20 21 22 23 24 25 26 27 28 29 2A 2B 2C 2D 2E 2F 2G 2K 2M 2N 2P 2Q 2R 2S 2T 2W 2Z 30 31 32 33 34 35 36 37 38 39 3A 3B 3C 3D 3E 3F 3G 3H 3J 3K 3L 3M 3N 3P 3R 3S 3T 3V 40 41 42 43 44 45 46 47 48 49 4A 4B 4C 4D 4M 4N 4P 4S 4T 50 51 52 53 54 55 56 57 58 59 5A 5B 5C 5E 5G 5H 5K 5M 5N 5P 5S 5T 5V 60 61 62 63 64 65 66 67 68 69 6A 6C 6E 6F 6M 6N 6P 6R 6S 6T 70 71 72 73 74 75 76 77 78 79 7A 7B 7C 7M 7N 7P 7Q 7V 7W 7X 80 81 82 83 84 85 86 87 88 89 8A 8D 8E 8L 8N 8P 8S 8T 8W 8Y 8Z 90 91 92 93 94 95 96 97 98 99 9A 9B 9C 9D 9F 9G 9H 9L 9S 9T 9W

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