RF Small Signal Bipolar Transistor, 0.01A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, PLASTIC, MINIMOLD PACKAGE-3
| 参数名称 | 属性值 |
| 包装说明 | PLASTIC, MINIMOLD PACKAGE-3 |
| Reach Compliance Code | unknown |
| 最大集电极电流 (IC) | 0.01 A |
| 集电极-发射极最大电压 | 25 V |
| 配置 | SINGLE |
| 最小直流电流增益 (hFE) | 40 |
| 最高频带 | ULTRA HIGH FREQUENCY BAND |
| JESD-30 代码 | R-PDSO-G3 |
| 元件数量 | 1 |
| 端子数量 | 3 |
| 最高工作温度 | 125 °C |
| 封装主体材料 | PLASTIC/EPOXY |
| 封装形状 | RECTANGULAR |
| 封装形式 | SMALL OUTLINE |
| 极性/信道类型 | NPN |
| 认证状态 | Not Qualified |
| 表面贴装 | YES |
| 端子形式 | GULL WING |
| 端子位置 | DUAL |
| 晶体管应用 | AMPLIFIER |
| 晶体管元件材料 | SILICON |
| 标称过渡频率 (fT) | 900 MHz |
| VCEsat-Max | 0.6 V |
| Base Number Matches | 1 |
| 2SC1321Q2 | 2SC1321Q4 | 2SC1321Q3 | 2SC1321Q5 | 2SC1321 | |
|---|---|---|---|---|---|
| 描述 | RF Small Signal Bipolar Transistor, 0.01A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, PLASTIC, MINIMOLD PACKAGE-3 | RF Small Signal Bipolar Transistor, 0.01A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, PLASTIC, MINIMOLD PACKAGE-3 | RF Small Signal Bipolar Transistor, 0.01A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, PLASTIC, MINIMOLD PACKAGE-3 | RF Small Signal Bipolar Transistor, 0.01A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, PLASTIC, MINIMOLD PACKAGE-3 | RF Small Signal Bipolar Transistor, 0.01A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, PLASTIC, MINIMOLD PACKAGE-3 |
| 包装说明 | PLASTIC, MINIMOLD PACKAGE-3 | PLASTIC, MINIMOLD PACKAGE-3 | PLASTIC, MINIMOLD PACKAGE-3 | PLASTIC, MINIMOLD PACKAGE-3 | PLASTIC, MINIMOLD PACKAGE-3 |
| Reach Compliance Code | unknown | unknown | unknown | unknown | unknown |
| 最大集电极电流 (IC) | 0.01 A | 0.01 A | 0.01 A | 0.01 A | 0.01 A |
| 集电极-发射极最大电压 | 25 V | 25 V | 25 V | 25 V | 25 V |
| 配置 | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE |
| 最小直流电流增益 (hFE) | 40 | 90 | 60 | 135 | 40 |
| 最高频带 | ULTRA HIGH FREQUENCY BAND | ULTRA HIGH FREQUENCY BAND | ULTRA HIGH FREQUENCY BAND | ULTRA HIGH FREQUENCY BAND | ULTRA HIGH FREQUENCY BAND |
| JESD-30 代码 | R-PDSO-G3 | R-PDSO-G3 | R-PDSO-G3 | R-PDSO-G3 | R-PDSO-G3 |
| 元件数量 | 1 | 1 | 1 | 1 | 1 |
| 端子数量 | 3 | 3 | 3 | 3 | 3 |
| 最高工作温度 | 125 °C | 125 °C | 125 °C | 125 °C | 125 °C |
| 封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| 封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| 封装形式 | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE |
| 极性/信道类型 | NPN | NPN | NPN | NPN | NPN |
| 认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| 表面贴装 | YES | YES | YES | YES | YES |
| 端子形式 | GULL WING | GULL WING | GULL WING | GULL WING | GULL WING |
| 端子位置 | DUAL | DUAL | DUAL | DUAL | DUAL |
| 晶体管应用 | AMPLIFIER | AMPLIFIER | AMPLIFIER | AMPLIFIER | AMPLIFIER |
| 晶体管元件材料 | SILICON | SILICON | SILICON | SILICON | SILICON |
| 标称过渡频率 (fT) | 900 MHz | 900 MHz | 900 MHz | 900 MHz | 900 MHz |
| VCEsat-Max | 0.6 V | 0.6 V | 0.6 V | 0.6 V | 0.6 V |
| Base Number Matches | 1 | 1 | 1 | 1 | 1 |
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