RF Small Signal Bipolar Transistor, 0.035A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN,
参数名称 | 属性值 |
是否无铅 | 含铅 |
是否Rohs认证 | 不符合 |
厂商名称 | NEC(日电) |
包装说明 | SMALL OUTLINE, R-PDSO-G4 |
针数 | 4 |
Reach Compliance Code | compliant |
ECCN代码 | EAR99 |
其他特性 | VERY LOW NOISE |
外壳连接 | COLLECTOR |
最大集电极电流 (IC) | 0.035 A |
基于收集器的最大容量 | 0.8 pF |
集电极-发射极最大电压 | 10 V |
配置 | SINGLE |
最高频带 | ULTRA HIGH FREQUENCY BAND |
JESD-30 代码 | R-PDSO-G4 |
JESD-609代码 | e0 |
元件数量 | 1 |
端子数量 | 4 |
封装主体材料 | PLASTIC/EPOXY |
封装形状 | RECTANGULAR |
封装形式 | SMALL OUTLINE |
峰值回流温度(摄氏度) | 230 |
极性/信道类型 | NPN |
认证状态 | Not Qualified |
表面贴装 | YES |
端子面层 | TIN LEAD |
端子形式 | GULL WING |
端子位置 | DUAL |
处于峰值回流温度下的最长时间 | 30 |
晶体管应用 | AMPLIFIER |
晶体管元件材料 | SILICON |
标称过渡频率 (fT) | 10000 MHz |
Base Number Matches | 1 |
2SC4095 | 2SC5013 | 2SC5008 | 2SC3587 | 2SC4228 | NE68000 | |
---|---|---|---|---|---|---|
描述 | RF Small Signal Bipolar Transistor, 0.035A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, | RF Small Signal Bipolar Transistor, 0.035A I(C), 1-Element, S Band, Silicon, NPN, | RF Small Signal Bipolar Transistor, 0.035A I(C), 1-Element, S Band, Silicon, NPN, | RF Small Signal Bipolar Transistor, 0.035A I(C), 1-Element, C Band, Silicon, NPN, | RF Small Signal Bipolar Transistor, 0.035A I(C), 1-Element, L Band, Silicon, NPN, PLASTIC, SC-70, SUPERMINI-3 | RF Small Signal Bipolar Transistor, 0.035A I(C), 1-Element, C Band, Silicon, NPN, |
厂商名称 | NEC(日电) | NEC(日电) | NEC(日电) | NEC(日电) | NEC(日电) | NEC(日电) |
Reach Compliance Code | compliant | compliant | unknown | unknown | compliant | unknown |
JESD-30 代码 | R-PDSO-G4 | R-PDSO-G4 | R-PDSO-G3 | X-CXMW-F4 | R-PDSO-G3 | R-XUUC-N2 |
端子数量 | 4 | 4 | 3 | 4 | 3 | 2 |
封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | CERAMIC, METAL-SEALED COFIRED | PLASTIC/EPOXY | UNSPECIFIED |
封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | UNSPECIFIED | RECTANGULAR | RECTANGULAR |
封装形式 | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | MICROWAVE | SMALL OUTLINE | UNCASED CHIP |
认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
表面贴装 | YES | YES | YES | YES | YES | YES |
端子形式 | GULL WING | GULL WING | GULL WING | FLAT | GULL WING | NO LEAD |
端子位置 | DUAL | DUAL | DUAL | UNSPECIFIED | DUAL | UPPER |
包装说明 | SMALL OUTLINE, R-PDSO-G4 | SMALL OUTLINE, R-PDSO-G4 | SMALL OUTLINE, R-PDSO-G3 | MICROWAVE, X-CXMW-F4 | SMALL OUTLINE, R-PDSO-G3 | - |
针数 | 4 | 4 | 3 | - | 3 | - |
ECCN代码 | EAR99 | EAR99 | - | EAR99 | EAR99 | - |
其他特性 | VERY LOW NOISE | LOW NOISE | - | LOW NOISE | LOW NOISE | LOW NOISE |
最大集电极电流 (IC) | 0.035 A | 0.035 A | - | 0.035 A | 0.035 A | 0.035 A |
基于收集器的最大容量 | 0.8 pF | 0.8 pF | - | 0.7 pF | 0.7 pF | - |
集电极-发射极最大电压 | 10 V | 10 V | - | 10 V | 10 V | 10 V |
配置 | SINGLE | SINGLE | - | SINGLE | SINGLE | SINGLE |
最高频带 | ULTRA HIGH FREQUENCY BAND | - | - | C BAND | ULTRA HIGH FREQUENCY BAND | C BAND |
元件数量 | 1 | 1 | - | 1 | 1 | 1 |
极性/信道类型 | NPN | NPN | - | NPN | NPN | NPN |
晶体管应用 | AMPLIFIER | AMPLIFIER | - | AMPLIFIER | AMPLIFIER | - |
晶体管元件材料 | SILICON | SILICON | - | SILICON | SILICON | SILICON |
标称过渡频率 (fT) | 10000 MHz | 10000 MHz | - | 10000 MHz | 8000 MHz | 10000 MHz |
Base Number Matches | 1 | 1 | 1 | 1 | 1 | - |
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