HMC-VVD102
v01.0209
GaAs PIN MMIC VOLTAGE-VARIABLE
ATTENUATOR, 17 - 27 GHz
Features
Low Insertion Loss: 1.5 dB
Wide Dynamic Range: 18 dB
High Input IP3: +17 dBm
Analog Control Voltage: -4 to +4V
Die Size: 1.01 x 1.175 x 0.1 mm
1
ATTENUATORS - ANALOG - CHIP
Typical Applications
This HMC-VVD102 is ideal for:
• Point-to-Point Radios
• Point-to-Multi-Point Radios
• Military Radios, Radar & ECM
• Test Equipment & Sensors
• Space
Functional Diagram
General Description
The HMC-VVD102 is a monolithic GaAs PIN diode
based Voltage Variable Attenuator (VVA) which
exhibits low insertion loss, high IP3 and wide dynamic
range. All bond pads and the die backside are Ti/
Au metallized and the PIN diode devices are fully
passivated for reliable operation. This wideband
MMIC VVA is compatible with conventional die
attach methods, as well as thermocompression and
thermosonic wirebonding, making it ideal for MCM
and hybrid microcircuit applications. All data shown
herein is measured with the chip in a 50 Ohm
environment and contacted with RF probes
Electrical Specifi cations*, T
A
= +25 °C, 50 Ohm System
Parameter
Frequency Range
Insertion Loss
Attenuation Range
Return Loss (Min. Attenuation)
Return Loss (Max. Attenuation)
Input IP3
IM3 @ Pin = 0 dBm / Tone
*Unless otherwise indicated, all measurements are from probed die
30
Min.
Typ.
17 - 27
1.5
18
12
15
17
2
Max.
Units
GHz
dB
dB
dB
dB
dBm
dBc
1 - 28
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC-VVD102
v01.0209
GaAs PIN MMIC VOLTAGE-VARIABLE
ATTENUATOR, 17 - 27 GHz
Minimum Attenuation vs. Frequency
0
Maximum Attenuation vs. Frequency
-19
-20
1
ATTENUATORS - ANALOG - CHIP
-1
LOSS (dB)
LOSS (dB)
13
15
17
19
21
23
25
27
-21
-22
-23
-3
-24
-4
FREQUENCY (GHz)
-25
13
15
17
19
21
23
25
27
FREQUENCY (GHz)
-2
Input & Output Return Loss vs.
Frequency @ Minimum Attenuation
0
-3
RETURN LOSS (dB)
-6
-9
-12
-15
-18
13
15
17
19
21
23
25
27
FREQUENCY (GHz)
INPUT (dB)
OUTPUT (dB)
Input & Output Return Loss vs.
Frequency @ Maximum Attenuation
0
INPUT (dB)
OUTPUT (dB)
-5
RETURN LOSS (dB)
-10
-15
-20
-25
13
15
17
19
21
23
25
27
FREQUENCY (GHz)
IM3 vs. Vdd2 (Vdd1= 4V) @ 17.5 GHz
(0 dBm Tones)
70
60
IM3 vs. Frequency (0 dBm Tones)
80
70
60
IM3 (dBc)
50
IM3 (dBc)
50
40
40
Vdd1 = 4V Vdd2 = 0.5V (Best Case)
Vdd1 = 4V Vdd2 = 0.5V (Worst Case)
30
30
20
-4
-2
0
VD2 (V)
2
4
17
19
21
23
25
27
FREQUENCY (GHz)
20
Note: Measured Performance Characteristics (Typical Performance at 25°C) Two-Tone measurement @ 0 dBm / tone
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
1 - 29
HMC-VVD102
v01.0209
GaAs PIN MMIC VOLTAGE-VARIABLE
ATTENUATOR, 17 - 27 GHz
1
ATTENUATORS - ANALOG - CHIP
Absolute Maximum Ratings
Control Voltage Range (Vdd)
Storage Temperature
Operating Temperature
Total Bias Current (Idd)
-6 to +6 Vdc
-65 to +150 °C
-55 to +85 °C
20 mA
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
Outline Drawing
NOTES:
1. ALL DIMENSIONS ARE IN INCHES [MM].
2. TYPICAL BOND PAD IS .004” SQUARE.
3. BACKSIDE METALLIZATION: GOLD.
4. BACKSIDE METAL IS GROUND.
5. BOND PAD METALLIZATION: GOLD.
6. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS.
7. OVERALL DIE SIZE ±.002”
Die Packaging Information
[1]
Standard
GP-2 (Gel Pack)
Alternate
[2]
[1] Refer to the “Packaging Information” section for die
packaging dimensions.
[2] For alternate packaging information contact Hittite
Microwave Corporation.
1 - 30
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC-VVD102
v01.0209
GaAs PIN MMIC VOLTAGE-VARIABLE
ATTENUATOR, 17 - 27 GHz
Pad Descriptions
Pad Number
1
Function
RFIN
Description
This pad is DC blocked
and matched to 50 Ohms.
Interface Schematic
1
Control Input
2, 3
Vdd1, Vdd2
4
RFOUT
This pad is DC blocked
and matched to 50 Ohms.
Die bottom must be connected to RF/DC ground.
Die Bottom
GND
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
1 - 31
ATTENUATORS - ANALOG - CHIP
HMC-VVD102
v01.0209
GaAs PIN MMIC VOLTAGE-VARIABLE
ATTENUATOR, 17 - 27 GHz
1
ATTENUATORS - ANALOG - CHIP
Assembly Diagram
Note 1: Bypass caps should be 100 pF (approximately) ceramic (single-layer) placed no farther than 30 mils from the attenuator.
Note 2: Best performance obtained from use of <10 mil (long) by 3 by 0.5mil ribbons on input and output.
1 - 32
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
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