CHENMKO ENTERPRISE CO.,LTD
SURFACE MOUNT GLASS PASSIVATED
HIGH EFFICIENCY SILICON RECTIFIER
VOLTAGE RANGE 50 - 1000 Volts CURRENT 3.0 Amperes
FEATURE
*Sm al l S u r f ac e M o u n t i n g T y p e. (SMP)
* Low forward voltage, high current capability
* Low leakage current
* Glass passivated junction
* High temperature soldering guaranteed :
260
o
C/10 seconds at terminals
0.081
(2.05)
0.077 (1.95)
(3)
HPL31PT
THRU
HPL38PT
PROVISIONAL SPEC.
SMP
0.170
(4.31)
0.163 (4.15)
(1)
0.077
(1.95)
0.073 (1.85)
0.005 (0.15
Min.)
(2)
0.019 (0.50
Min.)
0.045
(1.16)
0.042 (1.07)
0.019 (0.50
Min.)
0.264 (6.70)
0.254 (6.46)
0.212
(5.38)
0.208 (5.29)
CIRCUIT
2
1
0.055
(1.40)
0.051 (1.30)
3
Dimensions in inches and (millimeters)
SMP
UNITS
Volts
Volts
Volts
Amps
MAXIMUM RATINGES
( At T
A
= 25
o
C unless otherwise noted )
RATINGS
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current T
L
= 100
o
C
Peak Forward Surge Current 8.3 ms single half sine-wave
I
FSM
superimposed on rated load (JEDEC method)
Typical Junction Capacitance (Note 1)
Operating and Storage Temperature Range
C
J
T
J
, T
STG
70
-65 to +150
50
pF
o
SYMBOL
V
RRM
V
RMS
V
DC
I
O
HPL31PT HPL32PT HPL33PT HPL34PT HPL35PT HPL36PT HPL37PT HPL38PT
50
35
50
100
70
100
200
140
200
300
210
300
3.0
400
280
400
600
420
600
800
560
800
1000
700
1000
100
Amps
C
ELECTRICAL CHARACTERISTICS
( At T
A
= 25
o
C unless otherwise noted )
CHARACTERISTICS
Maximum Instantaneous Forward Voltage at 3.0 A DC
Maximum DC Reverse Current
at Rated DC Blocking Voltage
Maximum Reverse Recovery Time (Note 2)
@ T
A
= 25 C
@ T
A
= 100 C
trr
50
o
o
SYMBOL
V
F
I
R
HPL31PT HPL32PT HPL33PT HPL34PT HPL35PT HPL36PT HPL37PT HPL38PT
UNITS
Volts
uAmps
uAmps
1.0
1.3
5.0
500
1.5
1.7
70
nSec
RATING CHARACTERISTIC CURVES ( HPL31PT THRU HPL38PT )
FIG. 1 - TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC
50
NONINDUCTIVE
10
NONINDUCTIVE
trr
+0.5A
(-)
0
PULSE
GENERATOR
(NOTE 2)
1
NON-
INDUCTIVE
OSCILLOSCOPE
(NOTE 1)
(+)
-1.0A
NOTES: 1. Rise Time = 7 ns max. Input Impedance =
1 megohm. 22 pF.
2. Rise Time = 10 ns max. Source Impedlance=
50 ohms.
1cm
SET TIME BASE FOR
10/20 nS/cm
-0.25A
AVERAGE FORWARD CURRENT, ( A )
FIG. 2 - TYPICAL FORWARD
CURRENT DERATING CURVE
3.0
2.5
2.0
1.5
1.0
0.5
0
0
Single Phase
Half Wave 60Hz
Resistive or
Inductive Load
(+)
25 Vdc
(approx)
(-)
D.U.T
25 50 75 100 125 150 175
LEAD TEMPERATURE ( C )
O
FIG. 3 - TYPICAL REVERSE CHARACTERISTICS
1000
INSTANTANEOUS FORWARD CURRENT, ( A )
INSTANTANEOUS REVERSE CURRENT, (uA)
10
FIG. 4 - TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTICS
PL3
6P
L3
HP
~H
L35
L31
PT
L34
PT
HP
10
T
J
=100 C
o
0.1
1.0
T
J
=25
o
C
HP
T
J
=25 C
.01
0.1
.01
0
20
40
60
80
100
120
140
.001
0
.2
.4
.6
.8
1.0
1.2 1.4
1.6
INSTANTANEOUS FORWARD VOLTAGE, ( V )
1.8
PERCENT OF RATED PEAK REVERSE VOLTAGE, ( % )
FIG. 5 - MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT
PEAK FORWARD SURGE CURRENT, ( A )
120
JUNCTION CAPACITANCE, ( pF )
100
80
60
40
20
0
1
2
5
10
20
NUMBER OF CYCLES AT 60 Hz
50
100
200
100
60
40
20
10
6
4
2
1
.1
.2
FIG. 6 - TYPICAL JUNCTION CAPACITANCE
HPL3
1
PT~H
PL35
8.3ms Single Half Sine-Wave
(JEDEC Method)
PT
HPL3
6PT~
HP
L38PT
.4
1.0
2
4
10
20
REVERSE VOLTAGE, ( V )
HP
L3
7P
T
J
=125
o
C
o
T
J
=25
o
C
T~
1.0
~H
P
HP
L3
8P
T
100
Pulse Width = 300uS
1% Duty Cycle
3PT
PT
T
40
100
嵌入式系统
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