1N4454-1: 产品描述Rectifier Diode, 1 Element, 0.2A, Silicon, DO-35,; 产品类别分立半导体二极管; 文件大小33KB，共2页; 制造商Compensated Devices Inc

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1N4454-1概述

Rectifier Diode, 1 Element, 0.2A, Silicon, DO-35,

1N4454-1规格参数

参数名称	属性值
Reach Compliance Code	unknown
其他特性	METALLURGICALLY BONDED
外壳连接	ISOLATED
配置	SINGLE
二极管元件材料	SILICON
二极管类型	RECTIFIER DIODE
JEDEC-95代码	DO-35
JESD-30 代码	O-LALF-W2
JESD-609代码	e0
元件数量	1
端子数量	2
最大输出电流	0.2 A
封装主体材料	GLASS
封装形状	ROUND
封装形式	LONG FORM
认证状态	Not Qualified
最大反向恢复时间	0.004 µs
表面贴装	NO
端子面层	TIN LEAD
端子形式	WIRE
端子位置	AXIAL
Base Number Matches	1

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• 1N4454 and IN4454-1 AVAILABLE IN

JAN, JANTX,

AND

JANTXV

PER MIL-PRF-19500/144

• SWITCHING DIODE

• HERMETICALLY SEALED

• METALLURGICALLY BONDED

• DOUBLE PLUG CONSTRUCTION

1N4454

1N4454-1

MAXIMUM RATINGS

Junction Temperature: -55°C to +175°C

Storage Temperature: -55°C to +175°C

Operating Current: 200 mA @ TA = +25°C

Derating Factor: 1.33 mA/°C Above TA = + 25°C

Surge Current A: 1A (pk), Pw = 1 sec

Surge Current B: 4A (pk), Pw = 1 µs

ELECTRICAL CHARACTERISTICS

@ 25°C, unless otherwise speciﬁed.

VBR

@5µA

V RWM

Vf 1

I F = 10 mA

Vf 2

I F = 10 mA

TA = 150°C

t rr

Volts

Volts (pk)

200

V dc

1.0

V dc

0.7

n sec

FIGURE 1

I R1

@ 50 V dc

I R2

@ 50 V

TA = 150°C

CAPACITANCE

@0V

DESIGN DATA

CASE:

Hermetically sealed

glass case per MIL-S-19500/144

D0-35 outline

LEAD MATERIAL:

Copper clad steel.

LEAD FINISH:

Tin / Lead

THERMAL RESISTANCE:

(ROJL):

250 ˚C/W maximum at L = .375

THERMAL IMPEDANCE: (Z

OJX): 70

˚C/W maximum

POLARITY:

Cathode end is banded.

MOUNTING POSITION:

Any.

µA

0.1

µA

100

2.0

22 COREY STREET, MELROSE, MASSACHUSETTS 02176

PHONE (781) 665-1071

FAX (781) 665-7379

WEBSITE: http://www.cdi-diodes.com

E-mail: mail@cdi-diodes.com

1N4454-1相似产品对比

	1N4454-1	JAN1N4454-1	JANTXV1N4454-1	JANTXV1N4454	JANTX1N4454	JANTX1N4454-1	JAN1N4454
描述	Rectifier Diode, 1 Element, 0.2A, Silicon, DO-35,	Rectifier Diode, 1 Element, 0.2A, Silicon, DO-35,	Rectifier Diode, 1 Element, 0.2A, Silicon, DO-35,	Rectifier Diode, 1 Element, 0.2A, Silicon, DO-35,	Rectifier Diode, 1 Element, 0.2A, Silicon, DO-35,	Rectifier Diode, 1 Element, 0.2A, Silicon, DO-35,	Rectifier Diode, 1 Element, 0.2A, Silicon, DO-35,
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown	unknown	unknown
其他特性	METALLURGICALLY BONDED	METALLURGICALLY BONDED	METALLURGICALLY BONDED	METALLURGICALLY BONDED	METALLURGICALLY BONDED	METALLURGICALLY BONDED	METALLURGICALLY BONDED
外壳连接	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED
配置	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
二极管元件材料	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
二极管类型	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE
JEDEC-95代码	DO-35	DO-35	DO-35	DO-35	DO-35	DO-35	DO-35
JESD-30 代码	O-LALF-W2	O-LALF-W2	O-LALF-W2	O-LALF-W2	O-LALF-W2	O-LALF-W2	O-LALF-W2
元件数量	1	1	1	1	1	1	1
端子数量	2	2	2	2	2	2	2
最大输出电流	0.2 A	0.2 A	0.2 A	0.2 A	0.2 A	0.2 A	0.2 A
封装主体材料	GLASS	GLASS	GLASS	GLASS	GLASS	GLASS	GLASS
封装形状	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND
封装形式	LONG FORM	LONG FORM	LONG FORM	LONG FORM	LONG FORM	LONG FORM	LONG FORM
认证状态	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
最大反向恢复时间	0.004 µs	0.004 µs	0.004 µs	0.004 µs	0.004 µs	0.004 µs	0.004 µs
表面贴装	NO	NO	NO	NO	NO	NO	NO
端子形式	WIRE	WIRE	WIRE	WIRE	WIRE	WIRE	WIRE
端子位置	AXIAL	AXIAL	AXIAL	AXIAL	AXIAL	AXIAL	AXIAL
Base Number Matches	1	1	1	1	-	-	-
厂商名称	-	Compensated Devices Inc	Compensated Devices Inc	Compensated Devices Inc	Compensated Devices Inc	Compensated Devices Inc	Compensated Devices Inc
参考标准	-	MIL-19500/144	MIL-19500/144	MIL-19500/144	MIL-19500/144	MIL-19500/144	MIL-19500/144

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