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3SK135A-T1BU65

产品描述RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, PLASTIC, SC-59, 4 PIN
产品类别分立半导体    晶体管   
文件大小123KB,共4页
制造商NEC(日电)
下载文档 详细参数 选型对比 全文预览

3SK135A-T1BU65概述

RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, PLASTIC, SC-59, 4 PIN

3SK135A-T1BU65规格参数

参数名称属性值
包装说明PLASTIC, SC-59, 4 PIN
Reach Compliance Codeunknown
Is SamacsysN
外壳连接SOURCE
配置SINGLE
最大漏极电流 (ID)0.025 A
FET 技术METAL-OXIDE SEMICONDUCTOR
最大反馈电容 (Crss)0.03 pF
最高频带ULTRA HIGH FREQUENCY BAND
JESD-30 代码R-PDSO-G4
元件数量1
端子数量4
工作模式DUAL GATE, DEPLETION MODE
最高工作温度150 °C
封装主体材料PLASTIC/EPOXY
封装形状RECTANGULAR
封装形式SMALL OUTLINE
极性/信道类型N-CHANNEL
最小功率增益 (Gp)16 dB
认证状态Not Qualified
表面贴装YES
端子形式GULL WING
端子位置DUAL
晶体管应用AMPLIFIER
晶体管元件材料SILICON
Base Number Matches1

3SK135A-T1BU65相似产品对比

3SK135A-T1BU65 3SK135A-T1BU66 3SK135A-LU66 3SK135A-LU65 3SK135A-T2BU65 3SK135A-T2BU66
描述 RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, PLASTIC, SC-59, 4 PIN RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, PLASTIC, SC-59, 4 PIN RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, PLASTIC, SC-59, 4 PIN RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, PLASTIC, SC-59, 4 PIN RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, PLASTIC, SC-59, 4 PIN RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, PLASTIC, SC-59, 4 PIN
包装说明 PLASTIC, SC-59, 4 PIN PLASTIC, SC-59, 4 PIN PLASTIC, SC-59, 4 PIN PLASTIC, SC-59, 4 PIN PLASTIC, SC-59, 4 PIN PLASTIC, SC-59, 4 PIN
Reach Compliance Code unknown unknown unknown unknown unknown unknown
外壳连接 SOURCE SOURCE SOURCE SOURCE SOURCE SOURCE
配置 SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
最大漏极电流 (ID) 0.025 A 0.025 A 0.025 A 0.025 A 0.025 A 0.025 A
FET 技术 METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
最大反馈电容 (Crss) 0.03 pF 0.03 pF 0.03 pF 0.03 pF 0.03 pF 0.03 pF
最高频带 ULTRA HIGH FREQUENCY BAND ULTRA HIGH FREQUENCY BAND ULTRA HIGH FREQUENCY BAND ULTRA HIGH FREQUENCY BAND ULTRA HIGH FREQUENCY BAND ULTRA HIGH FREQUENCY BAND
JESD-30 代码 R-PDSO-G4 R-PDSO-G4 R-PDSO-G4 R-PDSO-G4 R-PDSO-G4 R-PDSO-G4
元件数量 1 1 1 1 1 1
端子数量 4 4 4 4 4 4
工作模式 DUAL GATE, DEPLETION MODE DUAL GATE, DEPLETION MODE DUAL GATE, DEPLETION MODE DUAL GATE, DEPLETION MODE DUAL GATE, DEPLETION MODE DUAL GATE, DEPLETION MODE
最高工作温度 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
极性/信道类型 N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL
最小功率增益 (Gp) 16 dB 16 dB 16 dB 16 dB 16 dB 16 dB
认证状态 Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
表面贴装 YES YES YES YES YES YES
端子形式 GULL WING GULL WING GULL WING GULL WING GULL WING GULL WING
端子位置 DUAL DUAL DUAL DUAL DUAL DUAL
晶体管应用 AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER
晶体管元件材料 SILICON SILICON SILICON SILICON SILICON SILICON
Base Number Matches 1 1 1 1 1 1
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