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1N6312US

产品描述Zener Diode, 3.3V V(Z), 5%, 0.5W, Silicon, Unidirectional, HERMETIC SEALED, GLASS, D-5D, 2 PIN
产品类别分立半导体    二极管   
文件大小108KB,共2页
制造商Compensated Devices Inc
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1N6312US概述

Zener Diode, 3.3V V(Z), 5%, 0.5W, Silicon, Unidirectional, HERMETIC SEALED, GLASS, D-5D, 2 PIN

1N6312US规格参数

参数名称属性值
厂商名称Compensated Devices Inc
包装说明HERMETIC SEALED, GLASS, D-5D, 2 PIN
Reach Compliance Codeunknown
Is SamacsysN
其他特性METALLURGICALLY BONDED
外壳连接ISOLATED
配置SINGLE
二极管元件材料SILICON
二极管类型ZENER DIODE
JESD-30 代码O-LELF-R2
JESD-609代码e0
元件数量1
端子数量2
封装主体材料GLASS
封装形状ROUND
封装形式LONG FORM
极性UNIDIRECTIONAL
最大功率耗散0.5 W
认证状态Not Qualified
标称参考电压3.3 V
表面贴装YES
技术ZENER
端子面层TIN LEAD
端子形式WRAP AROUND
端子位置END
最大电压容差5%
工作测试电流20 mA
Base Number Matches1

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• AVAILABLE IN
JAN, JANTX, JANTXV
AND
JANS
PER MIL-PRF-19500/533
• 500 mW ZENER DIODES
• NON CAVITY CONSTRUCTION
• METALLURGICALLY BONDED
1N6309US
THRU
1N6320US
MAXIMUM RATINGS
Operating Temperature: -65°C to +175°C
Storage Temperature: -65°C to +175°C
Power Dissapation: 500 mW@TEC=+125ºC
Power Derating: 10 mW/°C above TEC=+125ºC
Forward Voltage: 1.4V dc @ IF=1A dc (pulsed)
ELECTRICAL CHARACTERISTICS
@ 25°C, unless otherwise specified
VZ2
NOM.
±5% @
IZ2
VOLTS
1N6309US
1N6310US
1N6311US
1N6312US
1N6313US
1N6314US
1N6315US
1N6316US
1N6317US
1N6318US
1N6319US
1N6320US
2.4
2.7
3.0
3.3
3.6
3.9
4.3
4.7
5.1
5.6
6.2
6.8
VZ1
MIN.
@IZ1
250µ A
VOLTS
1.1
1.2
1.3
1.5
1.8
2.0
2.4
2.8
3.3
4.3
5.2
6.0
IZ2
TEST
CURRENT
mA
20
20
20
20
20
20
20
20
20
20
20
20
ZZ
@
IZ2
OHMS
30
30
29
24
22
20
18
16
14
8.0
3.0
3.0
ZZK
@
250µ A
OHMS
1200
1300
1400
1400
1400
1700
1400
1500
1300
1200
800
400
IZM
VZ (reg)
v
VZ
(1)
mA
177
157
141
128
117
108
99
90
83
76
68
63
VOLTS
1.5
1.5
1.5
1.6
1.6
1.6
0.9
0.5
0.4
0.4
0.3
0.35
AMPS
2.5
2.2
2.0
1.8
1.65
1.5
1.4
1.27
1.17
1.10
0.97
1.23
VOLTS
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.5
2.0
2.5
3.5
4.0
IZSM
SURGE
VR
IR1
@
25ºC
µ
A
100
60
30
5.0
3.0
2.0
2.0
5.0
5.0
5.0
5.0
2.0
IR2
ND
@ @250
µA
TA=
1-3 kHz
150ºC
µ
A
200
150
100
20
12
12
12
12
12
10
10
50
µ
V/ Hz
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
2.0
5.0
5.0
DIM
D
F
G
S
MILLIMETERS
MIN
MAX
1.78
2.16
0.48
0.71
4.19
4.95
0.08MIN.
INCHES
MIN MAX
0.070 0.085
0.019 0.028
0.165 0.195
0.003MIN.
TYPE
FIGURE 1
DESIGN DATA
CASE:
D-5D, Hermetically sealed glass
case, per MIL-PRF- 19500/533
LEAD FINISH:
Tin / Lead
THERMAL RESISTANCE: (R
OJEC):
50 ˚C/W maximum
NOTE 1:
v
VZ = VZ @ 20 mAdc minus VZ @ 2mAdc
THERMAL IMPEDANCE: (Z
OJX): 15
˚C/W maximum
POLARITY:
Diode to be operated with
the banded (cathode) end positive.
MOUNTING SURFACE SELECTION:
The Axial Coefficient of Expansion
(COE) of this device is approximately
+ 4PPM / °C. The COE of the Mounting
Surface System should be selected to
provide a suitable match with this
device.
22 COREY STREET, MELROSE, MASSACHUSETTS 02176
PHONE (781) 665-1071
FAX (781) 665-7379
WEBSITE: http://www.cdi-diodes.com
E-mail: mail@cdi-diodes.com

 
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