电子工程世界电子工程世界电子工程世界

关键词

搜索

型号

搜索

1N5146

产品描述Variable Capacitance Diode, 33pF C(T), 65V, Silicon, Abrupt, DO-7, GLASS PACKAGE-2
产品类别分立半导体    二极管   
文件大小12KB,共1页
制造商Cobham PLC
下载文档 详细参数 选型对比 全文预览

1N5146概述

Variable Capacitance Diode, 33pF C(T), 65V, Silicon, Abrupt, DO-7, GLASS PACKAGE-2

1N5146规格参数

参数名称属性值
厂商名称Cobham PLC
包装说明O-LALF-W2
Reach Compliance Codeunknown
ECCN代码EAR99
Is SamacsysN
最小击穿电压65 V
外壳连接ISOLATED
配置SINGLE
二极管电容容差10%
最小二极管电容比3.2
标称二极管电容33 pF
二极管元件材料SILICON
二极管类型VARIABLE CAPACITANCE DIODE
JEDEC-95代码DO-7
JESD-30 代码O-LALF-W2
JESD-609代码e0
元件数量1
端子数量2
封装主体材料GLASS
封装形状ROUND
封装形式LONG FORM
峰值回流温度(摄氏度)NOT SPECIFIED
最大功率耗散0.4 W
认证状态Not Qualified
最小质量因数200
最大重复峰值反向电压60 V
表面贴装NO
端子面层TIN LEAD
端子形式WIRE
端子位置AXIAL
处于峰值回流温度下的最长时间NOT SPECIFIED
变容二极管分类ABRUPT
Base Number Matches1

文档预览

下载PDF文档
K
NOX
S
EMICONDUCTOR,
I
NC.
GENERAL PURPOSE ABRUPT VARACTOR DIODES
1N5139 - 1N5148
1N5139A - 1N5148A
TYPE
NUMBER
1N5139
1N5139A
1N5140
1N5140A
1N5141
1N5141A
1N5142
1N5142A
1N5143
1N5143A
1N5144
1N5144A
1N5145
1N5145A
1N5146
1N5146A
1N5147
1N5147A
1N5148
1N5148A
CAPACITANCE @ - 4 Vdc
MIN
6.12
6.46
9.0
9.5
10.8
11.4
13.5
14.3
16.2
17.1
19.8
20.9
24.3
25.7
29.7
31.4
36.1
37.1
42.3
44.7
NOM
6.8
6.8
10.0
10.0
12.0
12.0
15.0
15.0
18.0
18.0
22.0
22.0
27.0
27.0
33.0
33.0
39.0
39.0
47.0
47.0
MAX
7.48
7.14
11.0
10.5
13.2
12.6
16.5
15.7
19.8
18.9
24.2
23.1
29.7
28.3
36.3
34.6
42.9
40.9
51.7
49.3
CAPACITANCE RATIO
C•4V / C•60V
2.7
2.7
2.8
2.8
2.8
2.8
2.8
2.8
2.8
2.8
3.2
3.2
3.2
3.2
3.2
3.2
3.2
3.2
3.2
3.2
MIN QUALITY FACTOR
Q @ - 4 Vdc
f = 50 MHz
350
350
300
300
300
300
250
250
250
250
200
200
200
200
200
200
200
200
200
200
Package Style
DC Power Dissipation (Pd)
Forward Current (If)
Min Reverse Breakdown Voltage (Bvr)
Max Reverse Current (I
R
)
Max Reverse Current (I
R2
)
Temp Coefficient of Capacitance
Operating Temperature Range (Topr)
Storage Temperature Range (Tstg)
Voltage Tolerance:
@ Ir = 10 µAdc
@ Vr = 55 Vdc
@ Vr = 55 Vdc; Ta = 150°C
@ Vr -4 Vdc, Ta -40 to +85°C
Standard Device
Suffix A
DO-7
400 mW
250 mA
65 Vdc
20 nAdc
20 µAdc
.03%/°C
-65 to + 175°C
-65 to + 200°C
±10%
± 5%
DENOTES MILITARY APPROVAL FOR JAN - JANTX - JANTXV
P.O. BOX 609 • ROCKPORT, MAINE 04856
• 207•236•6076
FAX 207•236•9558
-24-

1N5146相似产品对比

1N5146 1N5145 1N5146A 1N5139 1N5139A
描述 Variable Capacitance Diode, 33pF C(T), 65V, Silicon, Abrupt, DO-7, GLASS PACKAGE-2 Variable Capacitance Diode, 27pF C(T), 65V, Silicon, Abrupt, DO-7, GLASS PACKAGE-2 Variable Capacitance Diode, 33pF C(T), 65V, Silicon, Abrupt, DO-7, GLASS PACKAGE-2 Variable Capacitance Diode, 6.8pF C(T), 65V, Silicon, Abrupt, DO-7, GLASS PACKAGE-2 Variable Capacitance Diode, 6.8pF C(T), 65V, Silicon, Abrupt, DO-7, GLASS PACKAGE-2
厂商名称 Cobham PLC Cobham PLC Cobham PLC Cobham PLC Cobham PLC
包装说明 O-LALF-W2 GLASS PACKAGE-2 O-LALF-W2 GLASS PACKAGE-2 GLASS PACKAGE-2
Reach Compliance Code unknown unknown unknown unknown unknown
ECCN代码 EAR99 EAR99 EAR99 EAR99 EAR99
Is Samacsys N N N N N
最小击穿电压 65 V 65 V 65 V 65 V 65 V
外壳连接 ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED
配置 SINGLE SINGLE SINGLE SINGLE SINGLE
二极管电容容差 10% 10% 5% 10% 5%
最小二极管电容比 3.2 3.2 3.2 2.7 2.7
标称二极管电容 33 pF 27 pF 33 pF 6.8 pF 6.8 pF
二极管元件材料 SILICON SILICON SILICON SILICON SILICON
二极管类型 VARIABLE CAPACITANCE DIODE VARIABLE CAPACITANCE DIODE VARIABLE CAPACITANCE DIODE VARIABLE CAPACITANCE DIODE VARIABLE CAPACITANCE DIODE
JEDEC-95代码 DO-7 DO-7 DO-7 DO-7 DO-7
JESD-30 代码 O-LALF-W2 O-LALF-W2 O-LALF-W2 O-LALF-W2 O-LALF-W2
JESD-609代码 e0 e0 e0 e0 e0
元件数量 1 1 1 1 1
端子数量 2 2 2 2 2
封装主体材料 GLASS GLASS GLASS GLASS GLASS
封装形状 ROUND ROUND ROUND ROUND ROUND
封装形式 LONG FORM LONG FORM LONG FORM LONG FORM LONG FORM
峰值回流温度(摄氏度) NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
最大功率耗散 0.4 W 0.4 W 0.4 W 0.4 W 0.4 W
认证状态 Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
最小质量因数 200 200 200 350 350
最大重复峰值反向电压 60 V 60 V 60 V 60 V 60 V
表面贴装 NO NO NO NO NO
端子面层 TIN LEAD TIN LEAD TIN LEAD TIN LEAD TIN LEAD
端子形式 WIRE WIRE WIRE WIRE WIRE
端子位置 AXIAL AXIAL AXIAL AXIAL AXIAL
处于峰值回流温度下的最长时间 NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
变容二极管分类 ABRUPT ABRUPT ABRUPT ABRUPT ABRUPT
Base Number Matches 1 1 1 1 1

 
EEWorld订阅号

 
EEWorld服务号

 
汽车开发圈

 
机器人开发圈

About Us 关于我们 客户服务 联系方式 器件索引 网站地图 最新更新 手机版

站点相关: 大学堂 TI培训 Datasheet 电子工程 索引文件: 2763  1232  2529  2901  2582  22  8  19  6  16 

器件索引   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z

北京市海淀区中关村大街18号B座15层1530室 电话:(010)82350740 邮编:100190

电子工程世界版权所有 京B2-20211791 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号 Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved