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1N941B-1

产品描述Zener Diode, 11.7V V(Z), 4.96%, 0.5W, Silicon, DO-35, HERMETIC SEALED, DO-35, 2 PIN
产品类别分立半导体    二极管   
文件大小113KB,共2页
制造商Compensated Devices Inc
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1N941B-1概述

Zener Diode, 11.7V V(Z), 4.96%, 0.5W, Silicon, DO-35, HERMETIC SEALED, DO-35, 2 PIN

1N941B-1规格参数

参数名称属性值
厂商名称Compensated Devices Inc
包装说明HERMETIC SEALED, DO-35, 2 PIN
Reach Compliance Codeunknown
Is SamacsysN
其他特性METALLURGICALLY BONDED
外壳连接ISOLATED
配置SINGLE
二极管元件材料SILICON
二极管类型ZENER DIODE
JEDEC-95代码DO-35
JESD-30 代码O-LALF-W2
JESD-609代码e0
元件数量1
端子数量2
封装主体材料GLASS
封装形状ROUND
封装形式LONG FORM
最大功率耗散0.5 W
认证状态Not Qualified
标称参考电压11.7 V
表面贴装NO
技术ZENER
端子面层TIN LEAD
端子形式WIRE
端子位置AXIAL
电压温度Coeff-Max1.17 mV/°C
最大电压容差4.96%
Base Number Matches1

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• 1N941B, 1N943B, 1N944B AND 1N945B AVAILABLE IN
JAN, JANTX AND JANTXV
PER MIL-PRF-19500/157
• 1N941B-1, 1N943B-1, 1N944B-1 AND 1N945B-1 AVAILABLE IN
JAN, JANTX, JANTXV AND JANS
PER MIL-PRF-19500/157
• 11.7 VOLT NOMINAL ZENER VOLTAGE
• TEMPERATURE COMPENSATED ZENER REFERENCE DIODES
• METALLURGICALLY BONDED
1N941 thru 1N945B
and
1N941B-1 thru 1N945B-1
MAXIMUM RATINGS
Operating Temperature: -65°C to +175°C
Storage Temperature: -65°C to +175°C
DC Power Dissipation: 500mW @ +50°C
Power Derating: 4 mW / °C above +50°C
REVERSE LEAKAGE CURRENT
l
R
= 15
µ
A @ 25°C & V
R
= 8 Vdc
ELECTRICAL CHARACTERISTICS
@ 25°C, unless otherwise specified.
JEDEC
TYPE
NUMBER
ZENER
VOLTAGE
v @I
z
ZT
ZENER
TEST
CURRENT
I
ZT
MAXIMUM
VOLTAGE
TEMPERATURE
ZENER
TEMPERATURE
RANGE
IMPEDANCE
STABILITY
ZZT
∆V
ZT
MAXIMUM
(Note 1)
(Note 2)
mV
88
181
239
44
90
120
18
36
47
9
18
24
4
9
12
°C
0 to + 75
-55 to +100
-55 to +150
0 to + 75
-55 to +100
-55 to +150
0 to + 75
-55 to +100
-55 to +150
0 to + 75
-55 to +100
-55 to +150
0 to + 75
-55 to +150
-55 to +150
EFFECTIVE
TEMPERATURE
COEFFICIENT
VOLTS
1N941
1N941A
1N941B
1N942
1N942A
1N942B
1N943
1N943A
1N943B
1N944
1N944A
1N944B
1N945
1N945A
1N945B
11.12—12.28
11.12—12.28
11.12—12.28
11.12—12.28
11.12—12.28
11.12—12.28
11.12—12.28
11.12—12.28
11.12—12.28
11.12—12.28
11.12—12.28
11.12—12.28
11.12—12.28
11.12—12.28
11.12 -12.28
mA
7.5
7.5
7.5
7.5
7.5
7.5
7.5
7.5
7.5
7.5
7.5
7.5
7.5
7.5
7.5
OHMS
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
% / °C
0.01
0.01
0.01
0.005
0.005
0.005
0.002
0.002
0.002
0.001
0.001
0.001
0.0005
0.0005
0.0005
FIGURE 1
DESIGN DATA
CASE:
Hermetically sealed glass
case. DO – 35 outline.
LEAD MATERIAL:
Copper clad steel.
LEAD FINISH:
Tin / Lead
POLARITY:
Diode to be operated with
the banded (cathode) end positive.
MOUNTING POSITION:
Any.
NOTE 1
Zener impedance is derived by superimposing on lZT A 60Hz rms a.c. current equal to
10% of lZT.
NOTE 2
The maximum allowable change observed over the entire temperature range i.e., the
diode voltage will not exceed the specified mV at any discrete temperature between
the established limits, per JEDEC standard No.5.
22 COREY STREET, MELROSE, MASSACHUSETTS 02176
PHONE (781) 665-1071
FAX (781) 665-7379
WEBSITE: http://www.cdi-diodes.com
E-mail: mail@cdi-diodes.com

 
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