NP80N055CLE-AZ
| 参数名称 | 属性值 |
| Brand Name | Renesas |
| 是否Rohs认证 | 符合 |
| 厂商名称 | Renesas(瑞萨电子) |
| 零件包装代码 | MP-25 |
| 包装说明 | FLANGE MOUNT, R-PSFM-T3 |
| 针数 | 3 |
| 制造商包装代码 | PRSS0004AH-A3 |
| Reach Compliance Code | unknown |
| ECCN代码 | EAR99 |
| 雪崩能效等级（Eas） | 100 mJ |
| 外壳连接 | DRAIN |
| 配置 | SINGLE WITH BUILT-IN DIODE |
| 最小漏源击穿电压 | 55 V |
| 最大漏极电流 (Abs) (ID) | 80 A |
| 最大漏极电流 (ID) | 80 A |
| 最大漏源导通电阻 | 0.015 Ω |
| FET 技术 | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95代码 | TO-220AB |
| JESD-30 代码 | R-PSFM-T3 |
| 元件数量 | 1 |
| 端子数量 | 3 |
| 工作模式 | ENHANCEMENT MODE |
| 最高工作温度 | 175 °C |
| 封装主体材料 | PLASTIC/EPOXY |
| 封装形状 | RECTANGULAR |
| 封装形式 | FLANGE MOUNT |
| 峰值回流温度（摄氏度） | NOT SPECIFIED |
| 极性/信道类型 | N-CHANNEL |
| 最大功率耗散 (Abs) | 120 W |
| 最大脉冲漏极电流 (IDM) | 200 A |
| 认证状态 | Not Qualified |
| 表面贴装 | NO |
| 端子形式 | THROUGH-HOLE |
| 端子位置 | SINGLE |
| 处于峰值回流温度下的最长时间 | NOT SPECIFIED |
| 晶体管应用 | SWITCHING |
| 晶体管元件材料 | SILICON |
| Base Number Matches | 1 |
| NP80N055CLE-AZ | NP80N055MHE-S18-AY | NP80N055NLE-S18-AY | NP80N055NHE-S18-AY | NP80N055MLE-S18-AY | NP80N055KHE-E1-AY | NP80N055CHE-S12-AZ | NP80N055CHE-AZ | NP80N055EHE-E2-AY | |
|---|---|---|---|---|---|---|---|---|---|
| 描述 | NP80N055CLE-AZ | MOSFET N-CH 55V 80A TO-220 | NP80N055NLE-S18-AY | NP80N055NHE-S18-AY | NP80N055MLE-S18-AY | Nch Single Power MOSFET 55V 80A 11mohm MP-25ZK/TO-263 Automotive | NP80N055CHE-S12-AZ | NP80N055CHE-AZ | 80A, 55V, 0.011ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, LEAD FREE, MP-25ZJ, TO-263, 3 PIN |
| 是否Rohs认证 | 符合 | 符合 | 符合 | 符合 | 符合 | 符合 | 符合 | 符合 | 符合 |
| 零件包装代码 | MP-25 | MP-25K | MP-25SK | MP-25SK | MP-25K | MP-25ZK | MP-25 | MP-25 | D2PAK |
| 包装说明 | FLANGE MOUNT, R-PSFM-T3 | LEAD FREE, MP-25K, TO-220, 3 PIN | IN-LINE, R-PSIP-T3 | IN-LINE, R-PSIP-T3 | FLANGE MOUNT, R-PSFM-T3 | SMALL OUTLINE, R-PSSO-G2 | LEAD FREE, MP-25, TO-220, 3 PIN | MP-25, 3 PIN | SMALL OUTLINE, R-PSSO-G2 |
| 针数 | 3 | 3 | 3 | 3 | 3 | 3 | 3 | 3 | 4 |
| Reach Compliance Code | unknown | compliant | compliant | compliant | compliant | compliant | compliant | compliant | compliant |
| ECCN代码 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 |
| Brand Name | Renesas | Renesas | Renesas | Renesas | Renesas | Renesas | Renesas | Renesas | - |
| 厂商名称 | Renesas(瑞萨电子) | Renesas(瑞萨电子) | - | Renesas(瑞萨电子) | Renesas(瑞萨电子) | Renesas(瑞萨电子) | Renesas(瑞萨电子) | Renesas(瑞萨电子) | Renesas(瑞萨电子) |
| 制造商包装代码 | PRSS0004AH-A3 | PRSS0004AN-A3 | PRSS0004AM-A3 | PRSS0004AM-A3 | PRSS0004AN-A3 | PRSS0004AK-A3 | PRSS0004AH-A3 | PRSS0004AH-A3 | - |
| 雪崩能效等级（Eas） | 100 mJ | 100 mJ | - | - | - | 100 mJ | 100 mJ | 100 mJ | 100 mJ |
| 外壳连接 | DRAIN | DRAIN | - | - | - | DRAIN | DRAIN | DRAIN | DRAIN |
| 配置 | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | - | - | - | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE |
| 最小漏源击穿电压 | 55 V | 55 V | - | - | - | 55 V | 55 V | 55 V | 55 V |
| 最大漏极电流 (Abs) (ID) | 80 A | 80 A | - | - | - | 80 A | 80 A | 80 A | 80 A |
| 最大漏极电流 (ID) | 80 A | 80 A | - | - | - | 80 A | 80 A | 80 A | 80 A |
| 最大漏源导通电阻 | 0.015 Ω | 0.011 Ω | - | - | - | 0.011 Ω | 0.011 Ω | 0.011 Ω | 0.011 Ω |
| FET 技术 | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | - | - | - | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95代码 | TO-220AB | TO-220AB | - | - | - | TO-263AB | TO-220AB | TO-220AB | TO-263AB |
| JESD-30 代码 | R-PSFM-T3 | R-PSFM-T3 | - | - | - | R-PSSO-G2 | R-PSFM-T3 | R-PSFM-T3 | R-PSSO-G2 |
| 元件数量 | 1 | 1 | - | - | - | 1 | 1 | 1 | 1 |
| 端子数量 | 3 | 3 | - | - | - | 2 | 3 | 3 | 2 |
| 工作模式 | ENHANCEMENT MODE | ENHANCEMENT MODE | - | - | - | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE |
| 最高工作温度 | 175 °C | 175 °C | - | - | - | 175 °C | 175 °C | 175 °C | 175 °C |
| 封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | - | - | - | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| 封装形状 | RECTANGULAR | RECTANGULAR | - | - | - | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| 封装形式 | FLANGE MOUNT | FLANGE MOUNT | - | - | - | SMALL OUTLINE | FLANGE MOUNT | FLANGE MOUNT | SMALL OUTLINE |
| 峰值回流温度（摄氏度） | NOT SPECIFIED | NOT SPECIFIED | - | - | - | NOT SPECIFIED | NOT SPECIFIED | 260 | NOT SPECIFIED |
| 极性/信道类型 | N-CHANNEL | N-CHANNEL | - | - | - | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL |
| 最大功率耗散 (Abs) | 120 W | 120 W | - | - | - | 120 W | 120 W | 120 W | 120 W |
| 最大脉冲漏极电流 (IDM) | 200 A | 200 A | - | - | - | 200 A | 200 A | 200 A | 200 A |
| 认证状态 | Not Qualified | Not Qualified | - | - | - | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| 表面贴装 | NO | NO | - | - | - | YES | NO | NO | YES |
| 端子形式 | THROUGH-HOLE | THROUGH-HOLE | - | - | - | GULL WING | THROUGH-HOLE | THROUGH-HOLE | GULL WING |
| 端子位置 | SINGLE | SINGLE | - | - | - | SINGLE | SINGLE | SINGLE | SINGLE |
| 处于峰值回流温度下的最长时间 | NOT SPECIFIED | NOT SPECIFIED | - | - | - | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
| 晶体管应用 | SWITCHING | SWITCHING | - | - | - | SWITCHING | SWITCHING | SWITCHING | SWITCHING |
| 晶体管元件材料 | SILICON | SILICON | - | - | - | SILICON | SILICON | SILICON | SILICON |
电子工程世界版权所有
京B2-20211791
京ICP备10001474号-1
电信业务审批[2006]字第258号函
京公网安备 11010802033920号
Copyright © 2005-2024 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
