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HYM5V64834ATZG-50: 产品描述EDO DRAM Module, 8MX64, 50ns, CMOS, SODIMM-144; 产品类别存储存储; 文件大小202KB，共11页; 制造商SK Hynix(海力士); 官网地址http://www.hynix.com/eng/

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HYM5V64834ATZG-50概述

EDO DRAM Module, 8MX64, 50ns, CMOS, SODIMM-144

HYM5V64834ATZG-50规格参数

参数名称	属性值
厂商名称	SK Hynix(海力士)
零件包装代码	MODULE
包装说明	DIMM, DIMM144,32
针数	144
Reach Compliance Code	compliant
ECCN代码	EAR99
访问模式	FAST PAGE WITH EDO
最长访问时间	50 ns
其他特性	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH
I/O 类型	COMMON
JESD-30 代码	R-XDMA-N144
内存密度	536870912 bit
内存集成电路类型	EDO DRAM MODULE
内存宽度	64
功能数量	1
端口数量	1
端子数量	144
字数	8388608 words
字数代码	8000000
工作模式	ASYNCHRONOUS
最高工作温度	70 °C
最低工作温度
组织	8MX64
输出特性	3-STATE
封装主体材料	UNSPECIFIED
封装代码	DIMM
封装等效代码	DIMM144,32
封装形状	RECTANGULAR
封装形式	MICROELECTRONIC ASSEMBLY
电源	3.3 V
认证状态	Not Qualified
刷新周期	8192
自我刷新	NO
最大待机电流	0.004 A
最大压摆率	0.96 mA
最大供电电压 (Vsup)	3.6 V
最小供电电压 (Vsup)	3 V
标称供电电压 (Vsup)	3.3 V
表面贴装	NO
技术	CMOS
温度等级	COMMERCIAL
端子形式	NO LEAD
端子节距	0.8 mm
端子位置	DUAL
Base Number Matches	1

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HYM5V64804A Z-Series

SO DIMM 8Mx64 bit CMOS DRAM MODULE

based on 8Mx8 DRAM, EDO, 3.3V, 4K/8K-Refresh

DESCRIPTION

The HYM5V64804A Z-Series is a 8Mx64-bit EDO mode CMOS DRAM module consisting of eight 8Mx8

TSOP and one 2048-bit EEPROM on a 144 pin glass-epoxy printed circuit board. 0.1µF and 0.01µF

decoupling capacitors are mounted for each DRAM. The HYM5V64804AZ G-series is gold plated socket

type Dual In-line Memory Module suitable for easy interchange and addition of 64M byte memory.

FEATURES

•

Max. Active Power Dissipation

Speed

3.17W

2.59W

4.03W

3.46W

•

Single power supply of 3.3V

10%

•

Read-Modify-Write Capability

•

LVTTL compatible inputs and outputs

•

/CAS-before-/RAS, /RAS-only, Hidden

and Self refresh capability

•

Refresh cycles

tHPC

25ns

30ns

Part No.

HYM5V64804A Z-Series

HYM5V64834A Z-Series

Ref.

8K£

•

Fast access time and cycle time

Speed

tRAC

50ns

60ns

tCAC

13ns

15ns

•

144-Pin SO DIMM

•

Serial Presence Detect with EEPROM

•

Extended Data Out Operation

£ ª

/CAS-before-/RAS refresh, Hidden refresh

mode : 4K cycles / 64ms

PIN DISCRIPTION

/RAS0

/CAS0-CAS7,

/WE

/OE

A0 -A12

A0 -A11

DQ0-DQ63

SCL

SDA

VCC

VSS

Row Address Strobe

Column Address Strobe

Write Enable

Output Enable

Address Input(8K Product)

Address Input(4K Product)

Data Input / Output

Serial PD Clock Input

Serial PD Data Input/Output

Power (+3.3V)

Ground

This document is a general product description and is subject to change without notice. Hyundai Electronics does not assume

any responsibility for use of circuits described. No patent licenses are implied.

Rev.04 / May.98

Hyundai Semiconductor

HYM5V64834ATZG-50相似产品对比

	HYM5V64834ATZG-50	HYM5V64804ASLTZG-50	HYM5V64804ASLTZG-60	HYM5V64834ASLTZG-60	HYM5V64834ASLTZG-50	HYM5V64834ATZG-60	HYM5V64804ATZG-50	HYM5V64804ATZG-60
描述	EDO DRAM Module, 8MX64, 50ns, CMOS, SODIMM-144	EDO DRAM Module, 8MX64, 50ns, CMOS, SODIMM-144	EDO DRAM Module, 8MX64, 60ns, CMOS, SODIMM-144	EDO DRAM Module, 8MX64, 60ns, CMOS, SODIMM-144	EDO DRAM Module, 8MX64, 50ns, CMOS, SODIMM-144	EDO DRAM Module, 8MX64, 60ns, CMOS, SODIMM-144	EDO DRAM Module, 8MX64, 50ns, CMOS, SODIMM-144	EDO DRAM Module, 8MX64, 60ns, CMOS, SODIMM-144
厂商名称	SK Hynix(海力士)	SK Hynix(海力士)	SK Hynix(海力士)	SK Hynix(海力士)	SK Hynix(海力士)	SK Hynix(海力士)	SK Hynix(海力士)	SK Hynix(海力士)
零件包装代码	MODULE	MODULE	MODULE	MODULE	MODULE	MODULE	MODULE	MODULE
针数	144	144	144	144	144	144	144	144
Reach Compliance Code	compliant	unknown	unknown	compliant	compliant	compliant	unknown	unknow
ECCN代码	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
访问模式	FAST PAGE WITH EDO	FAST PAGE WITH EDO	FAST PAGE WITH EDO	FAST PAGE WITH EDO	FAST PAGE WITH EDO	FAST PAGE WITH EDO	FAST PAGE WITH EDO	FAST PAGE WITH EDO
最长访问时间	50 ns	50 ns	60 ns	60 ns	50 ns	60 ns	50 ns	60 ns
其他特性	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH/SELF REFRESH	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH/SELF REFRESH	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH/SELF REFRESH	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH/SELF REFRESH	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH
JESD-30 代码	R-XDMA-N144	R-XDMA-N144	R-XDMA-N144	R-XDMA-N144	R-XDMA-N144	R-XDMA-N144	R-XDMA-N144	R-XDMA-N144
内存密度	536870912 bit	536870912 bit	536870912 bit	536870912 bit	536870912 bit	536870912 bit	536870912 bit	536870912 bi
内存集成电路类型	EDO DRAM MODULE	EDO DRAM MODULE	EDO DRAM MODULE	EDO DRAM MODULE	EDO DRAM MODULE	EDO DRAM MODULE	EDO DRAM MODULE	EDO DRAM MODULE
内存宽度	64	64	64	64	64	64	64	64
功能数量	1	1	1	1	1	1	1	1
端口数量	1	1	1	1	1	1	1	1
端子数量	144	144	144	144	144	144	144	144
字数	8388608 words	8388608 words	8388608 words	8388608 words	8388608 words	8388608 words	8388608 words	8388608 words
字数代码	8000000	8000000	8000000	8000000	8000000	8000000	8000000	8000000
工作模式	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS
最高工作温度	70 °C	70 °C	70 °C	70 °C	70 °C	70 °C	70 °C	70 °C
组织	8MX64	8MX64	8MX64	8MX64	8MX64	8MX64	8MX64	8MX64
封装主体材料	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED
封装形状	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
封装形式	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY
认证状态	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
最大供电电压 (Vsup)	3.6 V	3.6 V	3.6 V	3.6 V	3.6 V	3.6 V	3.6 V	3.6 V
最小供电电压 (Vsup)	3 V	3 V	3 V	3 V	3 V	3 V	3 V	3 V
标称供电电压 (Vsup)	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V
表面贴装	NO	NO	NO	NO	NO	NO	NO	NO
技术	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS
温度等级	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL
端子形式	NO LEAD	NO LEAD	NO LEAD	NO LEAD	NO LEAD	NO LEAD	NO LEAD	NO LEAD
端子位置	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL
自我刷新	NO	YES	YES	YES	YES	NO	-	-
Base Number Matches	1	1	1	1	1	1	-	-

HYM5V64834ATZG-50

HYM5V64834ATZG-50概述

HYM5V64834ATZG-50规格参数

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