Standard SRAM, 16KX1, 50ns, CMOS, CDIP20,
| 参数名称 | 属性值 |
| 是否Rohs认证 | 不符合 |
| 厂商名称 | Inmos Corporation |
| Reach Compliance Code | unknown |
| 最长访问时间 | 50 ns |
| I/O 类型 | SEPARATE |
| JESD-30 代码 | R-XDIP-T20 |
| JESD-609代码 | e0 |
| 内存密度 | 16384 bit |
| 内存集成电路类型 | STANDARD SRAM |
| 内存宽度 | 1 |
| 端子数量 | 20 |
| 字数 | 16384 words |
| 字数代码 | 16000 |
| 工作模式 | ASYNCHRONOUS |
| 最高工作温度 | 125 °C |
| 最低工作温度 | -55 °C |
| 组织 | 16KX1 |
| 输出特性 | 3-STATE |
| 封装主体材料 | CERAMIC |
| 封装代码 | DIP |
| 封装等效代码 | DIP20,.3 |
| 封装形状 | RECTANGULAR |
| 封装形式 | IN-LINE |
| 并行/串行 | PARALLEL |
| 电源 | 5 V |
| 认证状态 | Not Qualified |
| 筛选级别 | 38535Q/M;38534H;883B |
| 最大压摆率 | 0.075 mA |
| 标称供电电压 (Vsup) | 5 V |
| 表面贴装 | NO |
| 技术 | CMOS |
| 温度等级 | MILITARY |
| 端子面层 | Tin/Lead (Sn/Pb) |
| 端子形式 | THROUGH-HOLE |
| 端子节距 | 2.54 mm |
| 端子位置 | DUAL |
| Base Number Matches | 1 |
| IMS1403S-55LM | IMS1403W-55M | IMS1403W-55LM | IMS1403S-35LM | IMS1403W-35LM | IMS1403W-35M | IMS1403S-45LM | IMS1403LP-45 | IMS1403LP-55 | IMS1403LW-35 | |
|---|---|---|---|---|---|---|---|---|---|---|
| 描述 | Standard SRAM, 16KX1, 50ns, CMOS, CDIP20, | Standard SRAM, 16KX1, 50ns, CMOS, CQCC20, | Standard SRAM, 16KX1, 50ns, CMOS, CQCC20, | Standard SRAM, 16KX1, 35ns, CMOS, CDIP20, | Standard SRAM, 16KX1, 35ns, CMOS, CQCC20, | Standard SRAM, 16KX1, 35ns, CMOS, CQCC20, | Standard SRAM, 16KX1, 40ns, CMOS, CDIP20, | Standard SRAM, 16KX1, 40ns, CMOS, PDIP20, | Standard SRAM, 16KX1, 50ns, CMOS, PDIP20, | Standard SRAM, 16KX1, 35ns, CMOS, CQCC20, |
| 是否Rohs认证 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 |
| Reach Compliance Code | unknown | unknown | unknown | unknown | unknown | unknown | unknown | unknown | unknown | unknown |
| 最长访问时间 | 50 ns | 50 ns | 50 ns | 35 ns | 35 ns | 35 ns | 40 ns | 40 ns | 50 ns | 35 ns |
| I/O 类型 | SEPARATE | SEPARATE | SEPARATE | SEPARATE | SEPARATE | SEPARATE | SEPARATE | SEPARATE | SEPARATE | SEPARATE |
| JESD-30 代码 | R-XDIP-T20 | R-XQCC-N20 | R-XQCC-N20 | R-XDIP-T20 | R-XQCC-N20 | R-XQCC-N20 | R-XDIP-T20 | R-PDIP-T20 | R-PDIP-T20 | R-XQCC-N20 |
| JESD-609代码 | e0 | e0 | e0 | e0 | e0 | e0 | e0 | e0 | e0 | e0 |
| 内存密度 | 16384 bit | 16384 bit | 16384 bit | 16384 bit | 16384 bit | 16384 bit | 16384 bit | 16384 bit | 16384 bit | 16384 bit |
| 内存集成电路类型 | STANDARD SRAM | STANDARD SRAM | STANDARD SRAM | STANDARD SRAM | STANDARD SRAM | STANDARD SRAM | STANDARD SRAM | STANDARD SRAM | STANDARD SRAM | STANDARD SRAM |
| 内存宽度 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
| 端子数量 | 20 | 20 | 20 | 20 | 20 | 20 | 20 | 20 | 20 | 20 |
| 字数 | 16384 words | 16384 words | 16384 words | 16384 words | 16384 words | 16384 words | 16384 words | 16384 words | 16384 words | 16384 words |
| 字数代码 | 16000 | 16000 | 16000 | 16000 | 16000 | 16000 | 16000 | 16000 | 16000 | 16000 |
| 工作模式 | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS |
| 最高工作温度 | 125 °C | 125 °C | 125 °C | 125 °C | 125 °C | 125 °C | 125 °C | 70 °C | 70 °C | 70 °C |
| 最低工作温度 | -55 °C | -55 °C | -55 °C | -55 °C | -55 °C | -55 °C | -55 °C | - | - | - |
| 组织 | 16KX1 | 16KX1 | 16KX1 | 16KX1 | 16KX1 | 16KX1 | 16KX1 | 16KX1 | 16KX1 | 16KX1 |
| 输出特性 | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE |
| 封装主体材料 | CERAMIC | CERAMIC | CERAMIC | CERAMIC | CERAMIC | CERAMIC | CERAMIC | PLASTIC/EPOXY | PLASTIC/EPOXY | CERAMIC |
| 封装代码 | DIP | QCCN | QCCN | DIP | QCCN | QCCN | DIP | DIP | DIP | QCCN |
| 封装等效代码 | DIP20,.3 | LCC20,.3X.43 | LCC20,.3X.43 | DIP20,.3 | LCC20,.3X.43 | LCC20,.3X.43 | DIP20,.3 | DIP20,.3 | DIP20,.3 | LCC20,.3X.43 |
| 封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| 封装形式 | IN-LINE | CHIP CARRIER | CHIP CARRIER | IN-LINE | CHIP CARRIER | CHIP CARRIER | IN-LINE | IN-LINE | IN-LINE | CHIP CARRIER |
| 并行/串行 | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL |
| 电源 | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V |
| 认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| 最大压摆率 | 0.075 mA | 0.075 mA | 0.075 mA | 0.075 mA | 0.075 mA | 0.075 mA | 0.075 mA | 0.075 mA | 0.075 mA | 0.075 mA |
| 标称供电电压 (Vsup) | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V |
| 表面贴装 | NO | YES | YES | NO | YES | YES | NO | NO | NO | YES |
| 技术 | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS |
| 温度等级 | MILITARY | MILITARY | MILITARY | MILITARY | MILITARY | MILITARY | MILITARY | COMMERCIAL | COMMERCIAL | COMMERCIAL |
| 端子面层 | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) |
| 端子形式 | THROUGH-HOLE | NO LEAD | NO LEAD | THROUGH-HOLE | NO LEAD | NO LEAD | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | NO LEAD |
| 端子节距 | 2.54 mm | 1.27 mm | 1.27 mm | 2.54 mm | 1.27 mm | 1.27 mm | 2.54 mm | 2.54 mm | 2.54 mm | 1.27 mm |
| 端子位置 | DUAL | QUAD | QUAD | DUAL | QUAD | QUAD | DUAL | DUAL | DUAL | QUAD |
| 厂商名称 | Inmos Corporation | Inmos Corporation | Inmos Corporation | Inmos Corporation | Inmos Corporation | Inmos Corporation | Inmos Corporation | - | - | - |
| 筛选级别 | 38535Q/M;38534H;883B | 38535Q/M;38534H;883B | 38535Q/M;38534H;883B | 38535Q/M;38534H;883B | 38535Q/M;38534H;883B | 38535Q/M;38534H;883B | 38535Q/M;38534H;883B | - | - | - |
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