Power Transistor Arrays
PUA3220
(PU3220)
Silicon PNP epitaxial planar type darlington
For power amplification
Complementary to PUA3120 (PU3120)
■
Features
9.5
±0.2
1.65
±0.2
8.0
±0.2
20.2
±0.3
Unit: mm
4.0
±0.2
M
ain
Di
sc te
on na
tin nc
ue e/
d
Solder Dip
5.3
±0.5
4.4
±0.5
•
High forward current transfer ratio h
FE
•
High-speed switching
•
PNP 3 elements
■
Absolute Maximum Ratings
T
C
=
25°C
Parameter
Symbol
V
CBO
V
CEO
I
C
V
EBO
I
CP
P
C
T
j
Collector-base voltage (Emitter open)
0.8
±0.25
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
T
a
=
25°C
Junction temperature
Storage temperature
T
stg
■
Electrical Characteristics
T
C
=
25°C
±
3°C
Parameter
Symbol
V
CEO
V
BE
I
CBO
I
CEO
I
EBO
h
FE1
Collector-emitter voltage (Base open)
Base-emitter voltage
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
/D
h
FE2 *
f
T
an
ce
Collector-emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
V
CE(sat)
t
on
t
f
t
stg
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
h
FE
Free
P
Q
1 000 to 10 000 2 000 to 10 000 1 000 to 5 000
■
Internal Connection
3
2
1
Publication date: March 2004
5
4
6
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−60
−60
−5
−4
−8
15
V
V
V
A
A
0.5
±0.15
7
×
2.57 = 17.78
±0.25
C 1.5
±0.5
Rating
Unit
0.5
±0.15
1.0
±0.25
2.54
±0.2
W
2.4
150
°C
°C
1: Emitter
2: Base
3: Collector
1 2 3 4 5 6 7 8
4: Base
5: Collector
6: Base
7: Collector
8: Emitter
SIP8-A1 Package
−55
to
+150
Conditions
Min
−60
Typ
Max
−2.5
Unit
V
I
C
= −30
mA, I
B
=
0
V
CE
= −3
V, I
C
= −3
A
V
CB
= −60
V, I
E
=
0
V
CE
= −30
V, I
B
=
0
V
EB
= −5
V, I
C
=
0
V
−200
−500
−2
µA
µA
V
tin
ue
mA
on
isc
V
CE
= −3
V, I
C
= −
0.5 A
V
CE
= −3
V, I
C
= −3
A
I
C
= −3
A, I
B
= −12
mA
I
C
= −3
sA
1 000
1 000
10 000
−2.0
V
CE
= −10
V, I
C
= −
0.5 A, f
=
1 MHz
I
B1
= −12
mA, I
B2
=
12 mA
V
CC
= −50
V
15
MHz
µs
µs
µs
Ma
int
en
0.3
2.0
0.5
8
Note) The part number in the parenthesis shows conventional part number.
SJK00028AED
1
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(1)
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