USB50803 thru USB50824, e3
Unidirectional Low Capacitance TVSarray ™
SCOTTSDALE DIVISION
DESCRIPTION
This TRANSIENT VOLTAGE SUPPRESSOR (TVS) array is packaged in an SO-8
configuration’ giving protection to 2 Unidirectional data or interface lines. It is
designed for use in applications where very low capacitance protection is required
at the board level from voltage transients caused by electrostatic discharge
(ESD) as defined in IEC 61000-4-2, electrical fast transients (EFT) per IEC
61000-4-4 and effects of secondary lightning. It is also available with either Tin-
Lead plated terminations or as RoHS Compliant with annealed matte-Tin finish by
adding an “e3” suffix to the part number*.
Using the schematic on the second page, pins 7 & 8 are tied together for the first
protected positive line, and pins 1 & 2 are tied together to the ground. The same
would then occur where pins 5 & 6 are tied together for a second protected positive
line and pins 2 & 3 are tied together to the ground. If protecting a negative line with
respect to ground, these may be switched in polarity connections where the pins are
tied together in this manner for Unidirectional protection.
These TVS arrays have a peak power rating of 500 watts for an 8/20
μsec
pulse.
This array is suitable for protection of sensitive circuitry consisting of TTL, CMOS
DRAM’s, SRAM’s, HCMOS, HSIC microprocessors,
UNIVERSAL SERIAL BUS
(USB)
and I/O transceivers. The USB508XX product provides board level protection
from static electricity and other induced voltage surges that can damage or upset
sensitive circuitry.
IMPORTANT:
For the most current data, consult
MICROSEMI’s
website:
http://www.microsemi.com
APPEARANCE
WWW .
Microsemi
.C
OM
SO–8
FEATURES
•
•
•
•
•
•
•
Protects up to 2 unidirectional lines
Surge protection per IEC 61000-4-2, IEC 61000-4-4
Provides electrically isolated protection
UL 94V-0 Flamability Classification
RoHS Compliant devices available by adding “e3” suffix
ULTRA LOW CAPACITANCE 3 pF per line pair
ULTRA LOW LEAKAGE
•
•
•
•
•
•
APPLICATIONS / BENEFITS
EIA-RS485 data rates:
5 Mbs
10 Base T Ethernet
USB date rate: 900 Mbs
Tape & Reel per EIA Standard 481
13 inch reel; 2,500 pieces (OPTIONAL)
Carrier tubes; 95 pcs (STANDARD)
MAXIMUM RATINGS
•
•
•
•
•
Operating Temperature: -55°C to +150°C
Storage Temperature: -55°C to +150°C
Peak Pulse Power: 500 watts (8/20 µs, Figure 1)
Pulse Repetition Rate: < .01%
Solder Temperatures: 260ºC for 10 s (maximum)
MECHANICAL AND PACKAGING
•
Molded SO-8 Surface Mount
•
Weight 0.066 grams (approximate)
•
Marking: Logo, device marking code*, date code
•
Pin #1 defined by dot on top of package
ELECTRICAL CHARACTERISTICS
STAND OFF
VOLTAGE
V
WM
VOLTS
MAX
USB50803
USB50805
USB50812
USB50815
USB50824
AF
AG
AH
AJ
AK
3.3
5.0
12.0
15.0
24.0
BREAKDOWN
VOLTAGE
V
BR
@1 mA
VOLTS
MIN
4
6.0
13.3
16.7
26.7
CLAMPING
VOLTAGE
V
C
@ 1 Amp
(Figure 2)
VOLTS
MAX
8
10.8
19
24
43
CLAMPING
VOLTAGE
V
C
@ 5 Amp
(Figure 2)
VOLTS
MAX
11
13
26
32
57
STANDBY
CURRENT
I
D
@ V
WM
µA
MAX
200
20
1
1
1
CAPACITANCE
(f=1 MHz)
C
@0V
pF
MAX
3
3
3
3
3
TEMPERATURE
COEFFICIENT
OF V
BR
α
VBR
mV/°C
MAX
-5
1
8
11
28
USB508xx, e3
PART
NUMBER
DEVICE
MARKING
*
*
Device marking has an e3 suffix added for the RoHS Compliant option, e.g. AFe3, AGe3, AHe3, AJe3, and AKe3.
Copyright
©
2005
6-28-2005 REV G
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
Page 1
USB50803 thru USB50824, e3
Unidirectional Low Capacitance TVSarray ™
SCOTTSDALE DIVISION
Symbol
V
WM
V
BR
V
C
I
D
C
SYMBOLS & DEFINITIONS
Definition
Stand Off Voltage: Maximum dc voltage that can be applied over the operating temperature range.
Vwm must be selected to be equal or be greater than the operating voltage of the line to be protected.
Minimum Breakdown Voltage: The minimum voltage the device will exhibit at a specified current
Clamping Voltage: Maximum clamping voltage across the TVS device when subjected to a given current at a
pulse time of 20
µs.
Standby Current: Leakage current at V
WM.
Capacitance: Capacitance of the TVS as defined @ 0 volts at a frequency of 1 MHz and stated in picofarads.
WWW .
Microsemi
.C
OM
GRAPHS
Ppp Peak Pulse Power (W)
8/20µs 500W Pulse
Figure 1
Peak Pulse Power Vs Pulse Time t = µsec
Figure 2
Pulse Wave Form
OUTLINE AND SCHEMATIC
DIM
A
B
C
D
F
G
J
K
L
P
INCHES
MIN
MAX
0.188
0.197
0.150
0.158
0.053
0.069
0.011
0.021
0.0160
0.050
0.050 BSC
0.006
0.010
0.004
0.008
0.189
0.206
0.228
0.244
MILLIMETERS
MIN
MAX
4.77
5.00
3.81
4.01
1.35
1.75
0.28
0.53
0.41
1.27
1.27 BSC
0.15
0.25
0.10
0.20
4.80
5.23
5.79
6.19
PAD LAYOUT
USB508xx, e3
OUTLINE
Copyright
©
2005
6-28-2005 REV G
SCHEMATIC
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
Page 2