27C256T
256K (32K x 8-Bit) OTP EPROM
A5-A9
1024 x 1022
Memory Matrix
x-Decoder
NC
A12-A14
A12-A16
I/O0
I/O 7
I/O15
Input
Data
Control
Y- Gating
Y - Decoder
27C256T
CE
OE
PGM
A0-A4
A10-A11
V
CC
V
PP
V
SS
H
H
: High Threshhold Inverter
Memory
Logic Diagram
F
EATURES
:
• 32K x 8-bit OTP EPROM organization
• R
AD
-P
AK
® radiation-hardened against natural space
radiation
• Total dose hardness:
- > 100 Krad (Si), depending upon space mission
• Excellent Single Event Effects:
-SEL
TH
> 80 MeV/mg/cm2
-SEU
TH
> 80 Mev/mg/cm2
• Package:
-32 pin R
AD
-P
AK
® flat pack
-32 pin R
AD
-P
AK
® DIP
• Fast access time:
- 120, 150, 200 ns (max)
• Low power dissipation:
- Active mode: 100 mW/MHz (typ)
- Standby mode: 10 µ W (typ)
Page programming time: 14 sec (typ)
• Programming power supply:
- V
PP
= 12.5 V
• One-time programmable
• Pin arrangement
- JEDEC standard byte-wide EPROM
- Flash memory and mask ROM compatible
D
ESCRIPTION
:
Maxwell Technologies’ 27C256T high density 256-Kilobit one-
time programmable electrically programmable read only mem-
ory microcircuit features a greater than 100 krad (Si) total
dose tolerance, depending upon space mission. The 27C256T
features fast address times and low power dissipation. The
27C256T offers high speed programming using page pro-
gramming mode.
Maxwell Technologies' patented R
AD
-P
AK
® packaging technol-
ogy incorporates radiation shielding in the microcircuit pack-
age. It eliminates the need for box shielding while providing
the required radiation shielding for a lifetime in orbit or space
mission. In a GEO orbit, R
AD
-P
AK
® provides greater than 100
krad (Si) radiation dose tolerance. This product is available
with screening up to Class S.
06.24.02 REV 4
All data sheets are subject to change without notice
1
(858) 503-3300 - Fax: (858) 503-3301 - www.maxwell.com
©2003 Maxwell Technologies
All rights reserved.
256K (32K x 8-Bit) OTP EPROM
T
ABLE
1. 27C256T P
INOUT
D
ESCRIPTION
P
IN
1
2, 3, 30
12-5, 27, 26, 23,
25, 4, 28, 29
22
24
13-15, 17-21
16
31
32
S
YMBOL
V
PP
NC
A0-A14
CE
OE
I/O0 - I/O7
GND
PGM
V
CC
D
ESCRIPTION
Programming Voltage
Not connected
Address Enable
Chip Enable
Output Enable
Data Input/Output
Ground
Program
+5V Power Supply
27C256T
Memory
T
ABLE
2. 27C256T A
BSOLUTE
M
AXIMUM
R
ATINGS
PARAMETER
Supply Voltage
1
Programming Voltage
1
All Input and Output Voltage
1,2
A9 and OE Voltage
Thermal Resistance
Operating Temperature Range
Storage Temperature Range
1. Relative to V
SS
.
2. V
IN
, V
OUT
, and V
ID
min = -1.0V for pulse width < 20 ns.
SYMBOL
V
CC
V
PP
V
IN
, V
OUT
V
ID
T
JC
T
OPR
T
STG
-55
-65
MIN
-0.6
-0.6
-0.6
-0.6
MAX
+7.0
+13.5
+7.0
13.0
1.26
+125
+125
UNIT
V
V
V
V
°
C/W
°
C
°
C
T
ABLE
3. D
ELTA
L
IMITS
P
ARAMETER
I
CC
1
I
CC
2
I
CC
3A
I
CC
3B
V
ARIATION
±10%
±10%
±10%
±10%
06.24.03 REV 4
All data sheets are subject to change without notice
2
©2003 Maxwell Technologies
All rights reserved.
256K (32K x 8-Bit) OTP EPROM
T
ABLE
4. 27C256T R
ECOMMENDED
O
PERATING
C
ONDITIONS
P
ARAMETER
Supply Voltage
Input Voltage
Operating Temperature Range
1. V
IL
min = -1.0V for pulse width < 50 ns.
2. V
IH
max = V
CC
+ 1.5V for pulse width < 20 ns.
S
YMBOL
V
CC
V
IL
V
IH
T
OPR
M
IN
4.5
-0.3
1
2.2
-55
27C256T
M
AX
5.5
0.8
V
CC
+1
2
+125
°
C
U
NITS
V
V
T
ABLE
5. 27C256T C
APACITANCE 1
PARAMETER
Input Capacitance
Output Capacitance
1. Guaranteed by design.
SYMBOL
C
IN
C
OUT
MIN
--
--
MAX
10
15
UNIT
pF
pF
Memory
T
ABLE
6. 27C256T DC E
LECTRICAL
C
HARACTERISTICS FOR
R
EAD
O
PERATION
(V
CC
= 5V + 10%, V
PP
= V
SS TO
V
CC
, T
A
= -55
TO
+125
°
C,
UNLESS OTHERWISE SPECIFIED
)
PARAMETER
Input Leakage Current
Output Leakage Current
Standby V
CC
Current
Operating V
CC
Current
TEST CONDITION
V
IN
= 5.5 V
V
OUT
= 5.5 V/0.45 V
CE = V
IH
I
OUT
= 0 mA, CE = V
IL
I
OUT
= 0 mA, f = 5 MHz
I
OUT
= 0 mA, f = 10 MHz
V
PP
Current
Input Voltage
Output Voltage
I
OH
= -400µ A
I
OL
= 2.1 mA
V
PP
= 5.5 V
SYMBOL
I
LI
I
LO
I
cc1
I
CC2
I
CC3A
I
CC3B
I
PP1
V
IH
V
IL
V
OH
V
OL
S
UBGROUPS
1, 2, 3
1, 2, 3
1, 2, 3
1, 2, 3
1, 2, 3
1, 2, 3
1, 2, 3
1, 2, 3
1, 2, 3
1, 2, 3
1, 2, 3
MIN
--
--
--
--
--
--
--
2.2
--
2.4
--
--
--
TYP
--
--
--
--
--
--
1
--
MAX
2
2
1
30
30
50
20
--
0.8
--
0.45
V
µA
V
UNIT
µA
µA
mA
mA
06.24.03 REV 4
All data sheets are subject to change without notice
3
©2003 Maxwell Technologies
All rights reserved.
256K (32K x 8-Bit) OTP EPROM
27C256T
T
ABLE
7. 27C256T AC E
LECTRICAL
C
HARACTERISTICS FOR
R
EAD
O
PERATION 1
,
2
(V
CC
= 5V + 10%, V
PP
= V
SS TO
V
CC
, T
A
= -55
TO
+125
°
C,
UNLESS OTHERWISE SPECIFIED
)
PARAMETER
Address Access Time
-120
-150
-200
Chip Enable Access Time
-120
-150
-200
Output Enable Access Time
-120
-150
-200
Output Hold to Address Change
-120
-150
-200
Output Disable to High-Z
3
-120
-150
-200
TEST CONDITION
CE = OE = V
IL
SYMBOL
t
ACC
SUBGROUPS
9, 10, 11
--
--
--
OE = V
IL
t
CE
9, 10, 11
--
--
--
CE = V
IL
t
OE
9, 10, 11
--
--
--
CE = V
IL
t
OH
9, 10, 11
0
0
0
CE = OE = V
IL
t
DF
9, 10, 11
0
0
0
50
50
50
ns
--
--
--
ns
60
70
70
ns
120
150
200
ns
120
150
200
ns
MIN
MAX
UNIT
Memory
1. t
DF
is defined as the time at which the output becomes an open circuit and data is no longer driven.
2. AC electrical parameters for programming operations are not tested. These are guaranteed by design.
3. Test conditions:
- Input pulse levels
0.45V/2.4V
- Input rise and fall times
< 10 ns
- Output load
1TTL Fate + 100 pF (including scope and jig)
- Referenced levels for measuring timing
0.8V/2.0V
06.24.03 REV 4
All data sheets are subject to change without notice
4
©2003 Maxwell Technologies
All rights reserved.
256K (32K x 8-Bit) OTP EPROM
27C256T
T
ABLE
8. 27C256T AC E
LECTRICAL
C
HARACTERISTICS FOR
P
ROGRAMMING
O
PERATION 1,2
(V
CC
= 6.0V + 0.25V, V
PP
= 12.5V + 0.3V, T
A
= 25
°
C)
PARAMETER
Address Setup Time
Address Hold Time
Data Setup Time
Data Hold Time
V
PP
Setup Time
V
CC
Setup Time
Output Enable Setup Time
Output Disable Time
CE Initial Programming Pulse Width
CE Overprogramming Pulse Width
Output Enable Hold Time
V
PP
Recovery Time
Data Valid from Chip Enable
SYMBOL
t
AS
t
AH
t
DS
t
DH
t
VPS
t
VCS
t
OES
t
DF3
t
PW
t
OPW
t
OEH
t
VR
t
DV
SUBGROUPS
9, 10, 11
9, 10, 11
9, 10, 11
9, 10, 11
9, 10, 11
9, 10, 11
9, 10, 11
9, 10, 11
9, 10, 11
9, 10, 11
9, 10, 11
9, 10, 11
9, 10, 11
MIN
2
0
2
2
2
2
2
0
0.19
0.19
2
2
1
TYP
--
--
--
--
--
--
--
--
0.20
--
--
--
--
MAX
--
--
--
--
--
--
--
130
0.21
5.25
--
--
--
UNIT
µs
µs
µs
µs
µs
µs
µs
ns
ms
ms
µs
µs
µs
Memory
1. t
DF
is defined as the time at which the output becomes an open circuit and data is no longer driven.
2. AC electrical parameters for programming operations are not tested. These are guaranteed by design.
3. Test Conditions:
- Input pulse levels
0.45V/2.4V
- Input rise and fall times
< 20 ns
- Referenced levels for measuring timing
0.8V/2.0V
T
ABLE
9. 27C256T DC E
LECTRICAL
C
HARACTERISTICS FOR
P
ROGRAMMING
O
PERATIONS1,2,3,4
(V
CC
= 6.0V + 0.25V, V
PP
= 12.5V + 0.3V, T
A
= 25
°
C)
PARAMETER
Input Leakage Current
Operating V
CC
Current
Operating V
PP
Current
Input Voltage
5
Output Voltage
I
OH
=-400µ A
I
OH
= 2.1mA
1.
2.
3.
4.
5.
CE=PGM=V
IL
TEST CONDITION
V
IN
=0V to V
CC
SYMBOL SUBGROUPS
I
LI
I
CC
I
PP
V
IH
V
IL
V
OH
V
OL
1, 2, 3
1, 2, 3
1, 2, 3
1, 2, 3
1, 2, 3
1, 2, 3
1, 2, 3
MIN
--
--
--
2.2
-0.1
7
2.4
--
MAX
2
30
40
V
CC
+0.5
6
0.8
--
0.45
V
UNIT
µA
mA
mA
V
V
CC
must be applied before V
PP
and removed after V
PP
.
V
PP
must not exceed 13V, including overshoot.
Do not change V
PP
from V
IL
to 12.5V or 12.5V to V
IL
when CE = low.
DC electrical parameters for programming operations are not tested. These are guaranteed by design.
Device reliability may be adversely affected if the device is installed or removed while V
PP
= 12.5V.
06.24.03 REV 4
All data sheets are subject to change without notice
5
©2003 Maxwell Technologies
All rights reserved.
stm32/stm8
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
