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FM24V05

产品描述SPECIALTY MEMORY CIRCUIT, PDSO8
产品类别存储   
文件大小199KB,共15页
制造商Ramtron International Corporation (Cypress Semiconductor Corporation)
官网地址http://www.cypress.com/
下载文档 详细参数 选型对比 全文预览

FM24V05概述

SPECIALTY MEMORY CIRCUIT, PDSO8

专用存储器电路, PDSO8

FM24V05规格参数

参数名称属性值
功能数量1
端子数量8
最大工作温度85 Cel
最小工作温度-40 Cel
最大供电/工作电压3.6 V
最小供电/工作电压2 V
额定供电电压3.3 V
加工封装描述绿色, MS-012AA, SOIC-8
状态TRANSFERRED
包装形状矩形的
包装尺寸SMALL OUTLINE
表面贴装Yes
端子形式GULL WING
端子间距1.27 mm
端子位置
包装材料塑料/环氧树脂
温度等级INDUSTRIAL
内存宽度8
组织64K × 8
存储密度524288 deg
操作模式同步
位数65536 words
位数64K
内存IC类型内存 电路

文档预览

下载PDF文档
Preliminary
FM24V05
512Kb Serial 3V F-RAM Memory
Features
512K bit Ferroelectric Nonvolatile RAM
Organized as 65,536 x 8 bits
High Endurance 100 Trillion (10
14
) Read/Writes
10 year Data Retention
NoDelay™ Writes
Advanced High-Reliability Ferroelectric Process
Fast Two-wire Serial Interface
Up to 3.4 MHz maximum bus frequency
Direct hardware replacement for EEPROM
Supports legacy timing for 100 kHz & 400 kHz
Device ID and Serial Number
Device ID reads out Manufacturer ID & Part ID
Unique Serial Number (FM24VN05)
Low Voltage, Low Power Operation
Low Voltage Operation 2.0V – 3.6V
Active Current < 150
µA
(typ.
@ 100KHz
)
90
µA
Standby Current (typ.)
5
µA
Sleep Mode Current (typ.)
Industry Standard Configuration
Industrial Temperature -40° C to +85° C
8-pin “Green”/RoHS SOIC Package
available in industry standard 8-pin SOIC package
using a familiar two-wire (I
2
C) protocol. The
FM24VN05 is offered with a unique serial number
that is read-only and can be used to identify a board
or system. Both devices incorporate a read-only
Device ID that allows the host to determine the
manufacturer, product density, and product revision.
The devices are guaranteed over an industrial
temperature range of -40°C to +85°C.
Description
The FM24V05 is a 512Kbit nonvolatile memory
employing an advanced ferroelectric process. A
ferroelectric random access memory or F-RAM is
nonvolatile and performs reads and writes like a
RAM. It provides reliable data retention for 10 years
while eliminating the complexities, overhead, and
system level reliability problems caused by
EEPROM and other nonvolatile memories.
The FM24V05 performs write operations at bus
speed. No write delays are incurred. The next bus
cycle may commence immediately without the need
for data polling. In addition, the product offers write
endurance orders of magnitude higher than
EEPROM. Also, F-RAM exhibits much lower power
during writes than EEPROM since write operations
do not require an internally elevated power supply
voltage for write circuits.
These capabilities make the FM24V05 ideal for
nonvolatile memory applications requiring frequent
or rapid writes. Examples range from data collection
where the number of write cycles may be critical, to
demanding industrial controls where the long write
time of EEPROM can cause data loss. The
combination of features allows more frequent data
writing with less overhead for the system.
The FM24V05 provides substantial benefits to users
of serial EEPROM, yet these benefits are available in
a hardware drop-in replacement. The devices are
Pin Configuration
A0
A1
A2
VSS
1
2
3
4
8
7
6
5
VDD
WP
SCL
SDA
Pin Name
A0-A2
SDA
SCL
WP
VDD
VSS
Function
Device Select Address
Serial Data/address
Serial Clock
Write Protect
Supply Voltage
Ground
This is a product that has fixed target specifications but are subject
to change pending characterization results.
Rev. 1.1
Feb. 2009
Ramtron International Corporation
1850 Ramtron Drive, Colorado Springs, CO 80921
(800) 545-FRAM, (719) 481-7000
http://www.ramtron.com
Page 1 of 15

FM24V05相似产品对比

FM24V05 FM24V05-GTR FM24V05-G
描述 SPECIALTY MEMORY CIRCUIT, PDSO8 SPECIALTY MEMORY CIRCUIT, PDSO8 SPECIALTY MEMORY CIRCUIT, PDSO8
功能数量 1 1 1
端子数量 8 8 8
表面贴装 Yes YES YES
端子形式 GULL WING GULL WING GULL WING
端子位置 DUAL DUAL
温度等级 INDUSTRIAL INDUSTRIAL INDUSTRIAL
内存宽度 8 8 8
组织 64K × 8 64KX8 64KX8
厂商名称 - Ramtron International Corporation (Cypress Semiconductor Corporation) Ramtron International Corporation (Cypress Semiconductor Corporation)
零件包装代码 - SOIC SOIC
包装说明 - SOP, SOP,
针数 - 8 8
Reach Compliance Code - unknow unknow
JESD-30 代码 - R-PDSO-G8 R-PDSO-G8
长度 - 4.9 mm 4.9 mm
内存密度 - 524288 bi 524288 bi
内存集成电路类型 - MEMORY CIRCUIT MEMORY CIRCUIT
字数 - 65536 words 65536 words
字数代码 - 64000 64000
工作模式 - SYNCHRONOUS SYNCHRONOUS
最高工作温度 - 85 °C 85 °C
最低工作温度 - -40 °C -40 °C
封装主体材料 - PLASTIC/EPOXY PLASTIC/EPOXY
封装代码 - SOP SOP
封装形状 - RECTANGULAR RECTANGULAR
封装形式 - SMALL OUTLINE SMALL OUTLINE
认证状态 - Not Qualified Not Qualified
座面最大高度 - 1.75 mm 1.75 mm
最大供电电压 (Vsup) - 3.6 V 3.6 V
最小供电电压 (Vsup) - 2 V 2 V
标称供电电压 (Vsup) - 3.3 V 3.3 V
技术 - CMOS CMOS
端子节距 - 1.27 mm 1.27 mm
宽度 - 3.9 mm 3.9 mm
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