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FM24V05-G

产品描述SPECIALTY MEMORY CIRCUIT, PDSO8
产品类别存储    存储   
文件大小199KB,共15页
制造商Ramtron International Corporation (Cypress Semiconductor Corporation)
官网地址http://www.cypress.com/
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FM24V05-G概述

SPECIALTY MEMORY CIRCUIT, PDSO8

专用存储器电路, PDSO8

FM24V05-G规格参数

参数名称属性值
厂商名称Ramtron International Corporation (Cypress Semiconductor Corporation)
零件包装代码SOIC
包装说明SOP,
针数8
Reach Compliance Codeunknow
JESD-30 代码R-PDSO-G8
长度4.9 mm
内存密度524288 bi
内存集成电路类型MEMORY CIRCUIT
内存宽度8
功能数量1
端子数量8
字数65536 words
字数代码64000
工作模式SYNCHRONOUS
最高工作温度85 °C
最低工作温度-40 °C
组织64KX8
封装主体材料PLASTIC/EPOXY
封装代码SOP
封装形状RECTANGULAR
封装形式SMALL OUTLINE
认证状态Not Qualified
座面最大高度1.75 mm
最大供电电压 (Vsup)3.6 V
最小供电电压 (Vsup)2 V
标称供电电压 (Vsup)3.3 V
表面贴装YES
技术CMOS
温度等级INDUSTRIAL
端子形式GULL WING
端子节距1.27 mm
端子位置DUAL
宽度3.9 mm

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Preliminary
FM24V05
512Kb Serial 3V F-RAM Memory
Features
512K bit Ferroelectric Nonvolatile RAM
Organized as 65,536 x 8 bits
High Endurance 100 Trillion (10
14
) Read/Writes
10 year Data Retention
NoDelay™ Writes
Advanced High-Reliability Ferroelectric Process
Fast Two-wire Serial Interface
Up to 3.4 MHz maximum bus frequency
Direct hardware replacement for EEPROM
Supports legacy timing for 100 kHz & 400 kHz
Device ID and Serial Number
Device ID reads out Manufacturer ID & Part ID
Unique Serial Number (FM24VN05)
Low Voltage, Low Power Operation
Low Voltage Operation 2.0V – 3.6V
Active Current < 150
µA
(typ.
@ 100KHz
)
90
µA
Standby Current (typ.)
5
µA
Sleep Mode Current (typ.)
Industry Standard Configuration
Industrial Temperature -40° C to +85° C
8-pin “Green”/RoHS SOIC Package
available in industry standard 8-pin SOIC package
using a familiar two-wire (I
2
C) protocol. The
FM24VN05 is offered with a unique serial number
that is read-only and can be used to identify a board
or system. Both devices incorporate a read-only
Device ID that allows the host to determine the
manufacturer, product density, and product revision.
The devices are guaranteed over an industrial
temperature range of -40°C to +85°C.
Description
The FM24V05 is a 512Kbit nonvolatile memory
employing an advanced ferroelectric process. A
ferroelectric random access memory or F-RAM is
nonvolatile and performs reads and writes like a
RAM. It provides reliable data retention for 10 years
while eliminating the complexities, overhead, and
system level reliability problems caused by
EEPROM and other nonvolatile memories.
The FM24V05 performs write operations at bus
speed. No write delays are incurred. The next bus
cycle may commence immediately without the need
for data polling. In addition, the product offers write
endurance orders of magnitude higher than
EEPROM. Also, F-RAM exhibits much lower power
during writes than EEPROM since write operations
do not require an internally elevated power supply
voltage for write circuits.
These capabilities make the FM24V05 ideal for
nonvolatile memory applications requiring frequent
or rapid writes. Examples range from data collection
where the number of write cycles may be critical, to
demanding industrial controls where the long write
time of EEPROM can cause data loss. The
combination of features allows more frequent data
writing with less overhead for the system.
The FM24V05 provides substantial benefits to users
of serial EEPROM, yet these benefits are available in
a hardware drop-in replacement. The devices are
Pin Configuration
A0
A1
A2
VSS
1
2
3
4
8
7
6
5
VDD
WP
SCL
SDA
Pin Name
A0-A2
SDA
SCL
WP
VDD
VSS
Function
Device Select Address
Serial Data/address
Serial Clock
Write Protect
Supply Voltage
Ground
This is a product that has fixed target specifications but are subject
to change pending characterization results.
Rev. 1.1
Feb. 2009
Ramtron International Corporation
1850 Ramtron Drive, Colorado Springs, CO 80921
(800) 545-FRAM, (719) 481-7000
http://www.ramtron.com
Page 1 of 15

FM24V05-G相似产品对比

FM24V05-G FM24V05-GTR FM24V05
描述 SPECIALTY MEMORY CIRCUIT, PDSO8 SPECIALTY MEMORY CIRCUIT, PDSO8 SPECIALTY MEMORY CIRCUIT, PDSO8
内存宽度 8 8 8
功能数量 1 1 1
端子数量 8 8 8
组织 64KX8 64KX8 64K × 8
表面贴装 YES YES Yes
温度等级 INDUSTRIAL INDUSTRIAL INDUSTRIAL
端子形式 GULL WING GULL WING GULL WING
端子位置 DUAL DUAL
厂商名称 Ramtron International Corporation (Cypress Semiconductor Corporation) Ramtron International Corporation (Cypress Semiconductor Corporation) -
零件包装代码 SOIC SOIC -
包装说明 SOP, SOP, -
针数 8 8 -
Reach Compliance Code unknow unknow -
JESD-30 代码 R-PDSO-G8 R-PDSO-G8 -
长度 4.9 mm 4.9 mm -
内存密度 524288 bi 524288 bi -
内存集成电路类型 MEMORY CIRCUIT MEMORY CIRCUIT -
字数 65536 words 65536 words -
字数代码 64000 64000 -
工作模式 SYNCHRONOUS SYNCHRONOUS -
最高工作温度 85 °C 85 °C -
最低工作温度 -40 °C -40 °C -
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY -
封装代码 SOP SOP -
封装形状 RECTANGULAR RECTANGULAR -
封装形式 SMALL OUTLINE SMALL OUTLINE -
认证状态 Not Qualified Not Qualified -
座面最大高度 1.75 mm 1.75 mm -
最大供电电压 (Vsup) 3.6 V 3.6 V -
最小供电电压 (Vsup) 2 V 2 V -
标称供电电压 (Vsup) 3.3 V 3.3 V -
技术 CMOS CMOS -
端子节距 1.27 mm 1.27 mm -
宽度 3.9 mm 3.9 mm -

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