PD - 96227
IRFH3707PbF
Applications
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HEXFET
®
Power MOSFET
Synchronous Buck Converter for Computer
Processor Power
Isolated DC to DC Converters for Network and
Telecom
Buck Converters for Set-Top Boxes
System/load switch
V
DSS
30V
R
DS(on)
max
Qg
12.4m @V
GS
= 10V 5.4nC
:
Benefits
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Low R
DS(ON)
Very Low Gate Charge
Low Junction to PCB Thermal Resistance
Fully Characterized Avalanche Voltage and
Current
100% Tested for R
G
Lead-Free (Qualified up to 260°C Reflow)
RoHS compliant (Halogen Free)
D
D
D
D
S
S
S
G
3mm x 3mm PQFN
Absolute Maximum Ratings
Parameter
V
DS
V
GS
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
D
@ T
C
= 25°C
I
DM
P
D
@T
A
= 25°C
P
D
@T
A
= 70°C
T
J
T
STG
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
g
Power Dissipation
g
Max.
30
± 20
12
9.4
29
96
2.8
1.8
0.02
-55 to + 150
Units
V
A
c
W
W/°C
°C
Linear Derating Factor
Operating Junction and
g
Storage Temperature Range
Thermal Resistance
Parameter
R
θJC
R
θJA
R
θJA
Junction-to-Case
f
Typ.
–––
–––
–––
Max.
7.5
45
31
Units
°C/W
Junction-to-Ambient
gh
Junction-to-Ambient (t<10s)
h
ORDERING INFORMATION:
See detailed ordering and shipping information on the last page of this data sheet.
Notes
through
are on page 10
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1
02/12/09
IRFH3707PbF
Static @ T
J
= 25°C (unless otherwise specified)
Parameter
BV
DSS
∆ΒV
DSS
/∆T
J
R
DS(on)
V
GS(th)
∆V
GS(th)
I
DSS
I
GSS
gfs
Q
g
Q
gs1
Q
gs2
Q
gd
Q
godr
Q
sw
Q
oss
R
G
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Q
gs2
+ Q
gd
)
Output Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min. Typ. Max. Units
30
–––
–––
–––
1.35
–––
–––
–––
–––
–––
17
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
0.02
9.4
14.5
1.8
-6.2
–––
–––
–––
–––
–––
5.4
1.1
0.7
2.2
1.5
2.9
3.8
2.0
7.8
10.2
8.7
9.7
755
171
83
–––
–––
12.4
V
Conditions
V
GS
= 0V, I
D
= 250µA
V/°C Reference to 25°C, I
D
= 1mA
V
GS
= 10V, I
D
= 12A
mΩ
V
GS
= 4.5V, I
D
= 9.4A
17.9
2.35
V
V
DS
= V
GS
, I
D
= 25µA
––– mV/°C
1.0
V
DS
= 24V, V
GS
= 0V
µA
V
DS
= 24V, V
GS
= 0V, T
J
= 125°C
150
100
V
GS
= 20V
nA
-100
V
GS
= -20V
–––
S V
DS
= 15V, I
D
= 9.4A
e
e
8.1
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
nC
Ω
nC
V
DS
= 15V
V
GS
= 4.5V
I
D
= 9.4A
See Fig.17 & 18
V
DS
= 16V, V
GS
= 0V
V
DD
= 15V, V
GS
= 4.5V
I
D
= 9.4A
R
G
=1.8Ω
See Fig.15
V
GS
= 0V
V
DS
= 15V
ƒ = 1.0MHz
ns
pF
Avalanche Characteristics
E
AS
I
AR
Parameter
Single Pulse Avalanche Energy
Avalanche Current
d
Typ.
–––
–––
Max.
13
9.4
Units
mJ
A
Diode Characteristics
Parameter
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Min. Typ. Max. Units
–––
–––
–––
–––
–––
–––
–––
–––
20
27
3.5
A
96
1.0
30
41
V
ns
nC
Conditions
MOSFET symbol
showing the
integral reverse
G
S
D
Ã
p-n junction diode.
T
J
= 25°C, I
S
= 9.4A, V
GS
= 0V
T
J
= 25°C, I
F
= 9.4A, V
DD
= 15V
di/dt = 200A/µs
e
eÃ
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
2
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IRFH3707PbF
1000
TOP
VGS
10V
5.0V
4.5V
3.5V
3.3V
3.0V
2.9V
2.7V
1000
TOP
VGS
10V
5.0V
4.5V
3.5V
3.3V
3.0V
2.9V
2.7V
ID, Drain-to-Source Current (A)
100
BOTTOM
ID, Drain-to-Source Current (A)
100
BOTTOM
10
10
2.7V
1
2.7V
Tj
≤
60µs PULSE WIDTH
= 25°C
0.1
0.1
1
10
100
V DS, Drain-to-Source Voltage (V)
≤
60µs PULSE WIDTH
1
0.1
1
Tj = 150°C
10
100
V DS, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
100
RDS(on) , Drain-to-Source On Resistance
(Normalized)
1.8
ID = 12A
VGS = 10V
ID, Drain-to-Source Current (A)
1.6
10
1.4
1.2
T J = 25°C
1
TJ = 150°C
1.0
VDS = 15V
≤60µs
PULSE WIDTH
0.1
1
2
3
4
5
6
0.8
0.6
-60 -40 -20 0
20 40 60 80 100 120 140 160
T J , Junction Temperature (°C)
VGS, Gate-to-Source Voltage (V)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
Vs. Temperature
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3
IRFH3707PbF
10000
14.0
VGS, Gate-to-Source Voltage (V)
VGS = 0V,
f = 1 MHZ
C iss = C gs + C gd, C ds SHORTED
C rss = C gd
C oss = C ds + C gd
ID= 9.4A
12.0
10.0
8.0
6.0
4.0
2.0
0.0
VDS= 24V
VDS= 15V
C, Capacitance (pF)
1000
Ciss
Coss
100
Crss
10
1
10
VDS, Drain-to-Source Voltage (V)
100
0
2
4
6
8
10
12
14
16
QG, Total Gate Charge (nC)
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
1000
OPERATION IN THIS AREA
LIMITED BY R DS(on)
ISD, Reverse Drain Current (A)
100
ID, Drain-to-Source Current (A)
100
100µsec
10
10
T = 150°C
J
TJ = 25°C
1msec
1
T A = 25°C
Tj = 150°C
Single Pulse
0.1
10msec
1
VGS = 0V
0.1
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
VSD, Source-to-Drain Voltage (V)
0
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
4
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IRFH3707PbF
12
VGS(th) , Gate Threshold Voltage (V)
2.5
10
ID, Drain Current (A)
2.0
ID = 25µA
1.5
8
6
4
1.0
2
0
25
50
75
100
125
150
T A , Ambient Temperature (°C)
0.5
-75 -50 -25
0
25
50
75 100 125 150
T J , Temperature ( °C )
Fig 9.
Maximum Drain Current Vs.
Ambient Temperature
Fig 10.
Threshold Voltage Vs. Temperature
100
Thermal Response ( Z thJA ) °C/W
D = 0.50
10
0.20
0.10
0.05
1
0.02
0.01
0.1
SINGLE PULSE
( THERMAL RESPONSE )
0.01
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + T A
10
100
1000
t1 , Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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