MMDT2227DW
NPN+PNP Dual General Purpose Transistors
P b
Lead(Pb)-Free
6 5
4
Features:
* Complementary Pair
* Epitaxial Planar Die Construction
* Ultra-Small Surface Mount Package
* One 2222A Type (NPN),One 2907A Type (PNP)
* Ideal for Low Power Ampli cation and Switching
1
2
3
SOT-363(SC-88)
C
2
B
1
E
1
Mechanical Data:
* Case Material: Molded Plastic. UL Flammability
Classi cation Rating 94V-0
* Moisture Sensitivity: Level 1 per J-STD-020C
* Terminals: Solderable per MIL-STD-202, Method 208
* Weight: 0.006 grams (approximate)
E
2
B
2
C
1
NPN+PNP
E1, B1, and C1 = 2907A
E2, B2, and C2 = 2222A
Maximum Ratings
Rating
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current-Continuous
Symbol
VCBO
VCEO
VEBO
IC
NPN 2222A
75
40
6.0
600
PNP 2907A
-60
-60
5.0
-600
Unit
V
V
V
mA
Thermal Characteristics
Characteristics
Collector Power Dissipation
Junction Temperature Range
Storage Temperature Range
Symbol
P
D
Tj
Tstg
Max
200
+150
-55 to +150
Unit
mW
°C
°C
Device Marking
MMDT2227DW=K27
WEITRON
http://www.weitron.com.tw
1/5
06-Dec-07
MMDT2227DW
Electrical Characteristics
Off Characteristics
(T
A
=25°C Unless Otherwise noted)
Symbol
Min
Typ
Max
Unit
Characteristics
Emitter-Base Breakdown Voltage
I
C
=10µA, I
E
=0
I
C
=-10µA, I
E
=0
2222A NPN
2907A PNP
2222A NPN
2907A PNP
2222A NPN
2907A PNP
2222A NPN
2907A PNP
V
(BR)CBO
75
-60
40
-60
6.0
-5.0
-
-
-
-
-
-
-
-
-
-
-
-
10
-10
10
-50
10
-10
V
Collector-Emitter Breakdown Voltage
I
C
=10mA, I
B
=0
I
C
=-10mA, I
B
=0
Emitter-Base Breakdown Voltage
I
E
=10µA, I
C
=0
I
E
=-10µA, I
C
=0
V
CB
=60V, I
E
=0
V
CB
=-50V, I
E
=0
V
CE
=60V, V
V
CE
=-30V, V
V
EB
=3V, I
C
=0
V
EB
=-3V, I
C
=0
=3V
=-0.5V
V
(BR)CES
V
V
(BR)EBO
V
I
CBO
-
-
-
-
-
-
-
-
-
-
-
-
nA
2222A NPN
2907A PNP
2222A NPN
2907A PNP
I
CEX
nA
I
EBO
nA
On Characteristics
DC Current Gain
V
CE
= 10V, I
C
= 0.1mA
V
CE
= -10V, I
C
= -0.1mA
V
CE
= 10V, I
C
= 1mA
V
CE
= -10V, I
C
= -1mA
V
CE
= 10V, I
C
= 10mA
V
CE
= -10V, I
C
= -10mA
V
CE
= 10V, I
C
= 150mA
V
CE
= -10V, I
C
= -150mA
V
CE
= 10V, I
C
= 500mA
V
CE
= -10V, I
C
= -500mA
V
CE
= 1V, I
C
= 150mA
2222A NPN
2907A PNP
2222A NPN
2907A PNP
2222A NPN
2907A PNP
2222A NPN
2907A PNP
2222A NPN
2907A PNP
2222A NPN
h
FE1
h
FE2
h
FE3
h
FE4
h
FE5
h
FE6
35
75
50
100
75
100
100
100
40
50
35
-
-
-
-
-
-
300
300
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
http://www.weitron.com.tw
WEITRON
2/5
06-Dec-07
MMDT2227DW
Electrical Characteristics
On Characteristics
Collector-Emitter Saturation Voltage
I
C
= 150mA, I
B
= 15mA
I
C
= –150mA, I
B
= –15mA
I
C
= 500mA, I
B
= 50mA
I
C
= –500mA, I
B
= –50mA
Base-Emitter Saturation Voltage
I
C
= 150mA, I
B
= 15mA
I
C
= -150mA, I
B
= –15mA
I
C
= 500mA, I
B
= 50mA
I
C
= –500mA, I
B
= –50mA
2222A NPN
2907A PNP
2222A NPN
2907A PNP
2222A NPN
2907A PNP
2222A NPN
2907A PNP
V
CE(sat1)
V
CE(sat2)
-
-
-
-
0.6
-
-
-
-
-
-
-
-
-
-
-
0.3
-0.4
1.0
-1.6
1.2
-1.3
2.0
-2.6
V
(T
A
=25°C Unless Otherwise noted)
Symbol
Min
Typ
Max
Unit
Characteristics
V
BE(sat1)
V
BE(sat2)
V
Small-Signal Characteristics
Current-Gain-Bandwidth Product
V
CE
= 20V, I
C
= 20mA, f = 100MHz
V
CE
= -20V, I
C
= -50mA, f = 100MHz
Output Capacitance
V
CB
= 10V, f = 1.0MHz
V
CB
= -10V, f = 1.0MHz
Input Capacitance
V
EB
= 0.5V, f = 1.0MHz
V
EB
= -2.0V, f = 1.0MHz
Noise Figure
V
CE
= 10V, I
C
= 0.1mA, f = 1.0kHz, R
S
= 1K
2222A NPN
2907A PNP
2222A NPN
2907A PNP
2222A NPN
2907A PNP
fT
300
200
-
-
-
-
-
-
-
-
-
-
-
-
-
-
8
8
25
30
4
MHz
Cob
pF
Cib
pF
NF
dB
Switching Characteristics
Delay Time
V
CC
= 30V, I
C
= 150mA, V
= 0.5V, I
B1
= 15mA
V
CC
= -30V, I
C
= -150mA, I
B1
= -15mA
Rise Time
V
CC
= 30V, I
C
= 150mA, V
= 0.5V, I
B1
= 15mA
V
CC
= -30V, I
C
= -150mA, I
B1
= -15mA
Storage Time
V
CC
= 30V, I
C
= 150mA, V
= 0.5V, I
B1
= 15mA
V
CC
= -30V, I
C
= -150mA, I
B1
= -15mA
Fall Time
V
CC
= 30V, I
C
= 150mA, V
= 0.5V, I
B1
= 15mA
V
CC
= -30V, I
C
= -150mA, I
B1
= -15mA
2222A NPN
2907A PNP
2222A NPN
2907A PNP
2222A NPN
2907A PNP
2222A NPN
2907A PNP
td
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
10
10
25
40
225
225
60
60
pF
tr
nS
t
S
nS
tf
nS
http://www.weitron.com.tw
WEITRON
3/5
06-Dec-07
MMDT2227DW
30
20
10
CAPACITANCE (pF)
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0.001
0.01
0.1
1
10
100
f = 1MHz
C
ibo
5.0
C
obo
1.0
0.1
1.0
10
50
V
CE
COLLECTOR-EMITTER VOLTAGE (V)
V
R
, REVERSE VOLTAGE (V)
Fig. 1 (2222A) Typical Capacitance
I
B
, BASE CURRENT (mA)
Fig. 2 (2222A ) Typical Collector Saturation Region
30
20
V
CE
COLLECTOR-EMITTER VOLTAGE (V)
f = 1MHz
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0.001
0.01
0.1
1
10
100
C
ibo
CAPACITANCE (pF)
10
5.0
C
obo
1.0
-0.1
-1.0
-10
-50
V
R
, REVERSE VOLTAGE (V)
Fig. 1 (2907A) Typical Capacitance
I
B
, BASE CURRENT (mA)
Fig. 4 (2907A) Typical Collector Saturation Region
http://www.weitron.com.tw
WEITRON
4/5
06-Dec-07
MMDT2227DW
SOT-363 Package Outline Dimensions
A
Unit:mm
SOT-363
4
6
5
B C
1
2
3
D
E
H
K
J
L
M
Dim
A
B
C
D
E
H
J
K
L
M
Min
Max
0.10
0.30
1.15
1.35
2.00
2.20
0.65 REF
0.30
0.40
1.80
2.20
-
0.10
0.80
1.10
0.25
0.40
0.10
0.25
0.5 mm (min)
0.4 mm (min)
1.9 mm
http://www.weitron.com.tw
WEITRON
0.65 mm 0.65 mm
5/5
06-Dec-07