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IS24C02D-2PI

产品描述EEPROM, 256X8, Serial, CMOS, PDIP8, 0.300 INCH, PLASTIC, DIP-8
产品类别存储    存储   
文件大小272KB,共21页
制造商Integrated Silicon Solution ( ISSI )
下载文档 详细参数 选型对比 全文预览

IS24C02D-2PI概述

EEPROM, 256X8, Serial, CMOS, PDIP8, 0.300 INCH, PLASTIC, DIP-8

IS24C02D-2PI规格参数

参数名称属性值
是否无铅含铅
是否Rohs认证不符合
厂商名称Integrated Silicon Solution ( ISSI )
零件包装代码DIP
包装说明DIP,
针数8
Reach Compliance Codecompliant
ECCN代码EAR99
最大时钟频率 (fCLK)0.4 MHz
JESD-30 代码R-PDIP-T8
JESD-609代码e0
长度9.325 mm
内存密度2048 bit
内存集成电路类型EEPROM
内存宽度8
湿度敏感等级3
功能数量1
端子数量8
字数256 words
字数代码256
工作模式SYNCHRONOUS
最高工作温度85 °C
最低工作温度-40 °C
组织256X8
封装主体材料PLASTIC/EPOXY
封装代码DIP
封装形状RECTANGULAR
封装形式IN-LINE
并行/串行SERIAL
峰值回流温度(摄氏度)NOT SPECIFIED
认证状态Not Qualified
座面最大高度4.57 mm
串行总线类型I2C
最大供电电压 (Vsup)5.5 V
最小供电电压 (Vsup)1.8 V
标称供电电压 (Vsup)2.5 V
表面贴装NO
技术CMOS
温度等级INDUSTRIAL
端子面层TIN LEAD
端子形式THROUGH-HOLE
端子节距2.54 mm
端子位置DUAL
处于峰值回流温度下的最长时间NOT SPECIFIED
宽度7.62 mm
最长写入周期时间 (tWC)5 ms
Base Number Matches1

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IS24C02D
2K-bit 2-WIRE SERIAL CMOS EEPROM
JULY 2007
FEATURES
• Two-Wire Serial Interface, I
2
C
TM
compatible
– Bidirectional data transfer protocol
– 400 kHz (2.5V) and 1 MHz (5.0V) compatibility
• Wide Voltage Operation
– Vcc = 1.8V to 5.5V
• Organization:
– 256 x 8-bit
• Data Protection Features
– Write Protect Pin
– Permanent Software Protection
• 16-Byte Page Write Buffer
– Partial Page-writes permitted
• Low Power CMOS Technology
– Active Current less than 2 mA (5V)
– Standby Current less than 6 µA (5V)
– Standby Current less than 2 µA (2.5V)
• Random or Sequential Read Modes
• Filtered Inputs for Noise Suppression
• Self timed Write cycle with auto clear
– 5 ms max. @ 2.5V
• High Reliability
– Endurance: 1,000,000 Cycles
– Data Retention: 100 Years
• Automotive and Industrial temperature ranges
• 8-pin PDIP, 8-pin SOIC, 8-pad DFN, 8-pin
TSSOP, and 8-pin MSOP
DESCRIPTION
The IS24C02D is an electrically erasable PROM device
that uses the standard 2-wire interface for
communications. The IS24C02D contains a memory
array of 2,048-bits (256 x 8), and is further subdivided
into 16 pages of 16 bytes each for page-write mode. The
software write-protection feature is initiated with a unique
irreversible instruction. After this command is
transmitted, the first 128 bytes of the array become
permanently read-only. This feature is popular in
applications like DRAM DIMMs to retain DRAM related
data. This EEPROM operates in a wide voltage range of
1.8V to 5.5V
to be compatible with most application
voltages. ISSI designed the IS24C02D as a low-cost
and low-power 2-wire EEPROM solution. The devices
are packaged in 8-pin PDIP, 8-pin SOIC, 8-pad DFN and
8-pin TSSOP, and 8-pin MSOP.
The IS24C02D maintains compatibility with the popular
2-wire bus protocol, so it is easy to use in applications
implementing this bus type. The simple bus consists of
the Serial Clock wire (SCL) and the Serial Data wire
(SDA). Using the bus, a Master device such as a
microcontroller is usually connected to one or more
Slave devices such as the IS24C02D. The bit stream
over the SDA line includes a series of bytes, which
identifies a particular Slave device, an instruction, an
address within that Slave device, and a series of data, if
appropriate. The IS24C02D has a Write Protect pin (WP)
to allow blocking of any write instruction transmitted
over the bus.
Copyright © 2005 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no liability
arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest version of this device specification before relying on any published
information and before placing orders for products.
Integrated Silicon Solution, Inc. — www.issi.com
Rev. A
06/20/07
1

IS24C02D-2PI相似产品对比

IS24C02D-2PI IS24C02D-2ZI IS24C02D-2SI IS24C02D-3PLA3 IS24C02D-3SLA3 IS24C02D-2DLI IS24C02D-2GI
描述 EEPROM, 256X8, Serial, CMOS, PDIP8, 0.300 INCH, PLASTIC, DIP-8 EEPROM, 256X8, Serial, CMOS, PDSO8, PLASTIC, MO-153, TSSOP-8 EEPROM, 256X8, Serial, CMOS, PDSO8, 0.120 INCH, PLASTIC, MO-187, MSOP-8 EEPROM, 256X8, Serial, CMOS, PDIP8, 0.300 INCH, LEAD FREE, PLASTIC, DIP-8 EEPROM, 256X8, Serial, CMOS, PDSO8, 0.120 INCH, LEAD FREE, PLASTIC, MO-187, MSOP-8 EEPROM, 256X8, Serial, CMOS, LEAD FREE, MO-229, DFN-8 EEPROM, 256X8, Serial, CMOS, PDSO8, 0.150 INCH, PLASTIC, SOP-8
是否无铅 含铅 含铅 含铅 不含铅 不含铅 不含铅 含铅
是否Rohs认证 不符合 不符合 不符合 符合 符合 符合 不符合
厂商名称 Integrated Silicon Solution ( ISSI ) Integrated Silicon Solution ( ISSI ) Integrated Silicon Solution ( ISSI ) Integrated Silicon Solution ( ISSI ) Integrated Silicon Solution ( ISSI ) Integrated Silicon Solution ( ISSI ) Integrated Silicon Solution ( ISSI )
零件包装代码 DIP TSSOP TSSOP DIP TSSOP SON SOIC
包装说明 DIP, TSSOP, TSSOP, DIP, TSSOP, LEAD FREE, MO-229, DFN-8 SOP,
针数 8 8 8 8 8 8 8
Reach Compliance Code compliant compliant compliant compliant compliant compliant compli
ECCN代码 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
最大时钟频率 (fCLK) 0.4 MHz 0.4 MHz 0.4 MHz 0.4 MHz 0.4 MHz 0.4 MHz 0.4 MHz
JESD-30 代码 R-PDIP-T8 R-PDSO-G8 S-PDSO-G8 R-PDIP-T8 S-PDSO-G8 R-XDSO-N8 R-PDSO-G8
JESD-609代码 e0 e0 e0 e3 e3 e3 e0
长度 9.325 mm 4.4 mm 3 mm 9.325 mm 3 mm 3 mm 4.9 mm
内存密度 2048 bit 2048 bit 2048 bit 2048 bit 2048 bit 2048 bit 2048 bi
内存集成电路类型 EEPROM EEPROM EEPROM EEPROM EEPROM EEPROM EEPROM
内存宽度 8 8 8 8 8 8 8
湿度敏感等级 3 1 1 3 1 1 1
功能数量 1 1 1 1 1 1 1
端子数量 8 8 8 8 8 8 8
字数 256 words 256 words 256 words 256 words 256 words 256 words 256 words
字数代码 256 256 256 256 256 256 256
工作模式 SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS
最高工作温度 85 °C 85 °C 85 °C 125 °C 125 °C 85 °C 85 °C
最低工作温度 -40 °C -40 °C -40 °C -40 °C -40 °C -40 °C -40 °C
组织 256X8 256X8 256X8 256X8 256X8 256X8 256X8
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY UNSPECIFIED PLASTIC/EPOXY
封装代码 DIP TSSOP TSSOP DIP TSSOP HVSON SOP
封装形状 RECTANGULAR RECTANGULAR SQUARE RECTANGULAR SQUARE RECTANGULAR RECTANGULAR
封装形式 IN-LINE SMALL OUTLINE, THIN PROFILE, SHRINK PITCH SMALL OUTLINE, THIN PROFILE, SHRINK PITCH IN-LINE SMALL OUTLINE, THIN PROFILE, SHRINK PITCH SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE SMALL OUTLINE
并行/串行 SERIAL SERIAL SERIAL SERIAL SERIAL SERIAL SERIAL
峰值回流温度(摄氏度) NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED 260 260 260 NOT SPECIFIED
认证状态 Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
座面最大高度 4.57 mm 1.2 mm 1.1 mm 4.57 mm 1.1 mm 0.8 mm 1.73 mm
串行总线类型 I2C I2C I2C I2C I2C I2C I2C
最大供电电压 (Vsup) 5.5 V 5.5 V 5.5 V 5.5 V 5.5 V 5.5 V 5.5 V
最小供电电压 (Vsup) 1.8 V 1.8 V 1.8 V 2.5 V 2.5 V 1.8 V 1.8 V
标称供电电压 (Vsup) 2.5 V 2.5 V 2.5 V 5 V 5 V 2.5 V 2.5 V
表面贴装 NO YES YES NO YES YES YES
技术 CMOS CMOS CMOS CMOS CMOS CMOS CMOS
温度等级 INDUSTRIAL INDUSTRIAL INDUSTRIAL AUTOMOTIVE AUTOMOTIVE INDUSTRIAL INDUSTRIAL
端子面层 TIN LEAD TIN LEAD TIN LEAD MATTE TIN MATTE TIN MATTE TIN TIN LEAD
端子形式 THROUGH-HOLE GULL WING GULL WING THROUGH-HOLE GULL WING NO LEAD GULL WING
端子节距 2.54 mm 0.65 mm 0.65 mm 2.54 mm 0.65 mm 0.5 mm 1.27 mm
端子位置 DUAL DUAL DUAL DUAL DUAL DUAL DUAL
处于峰值回流温度下的最长时间 NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED 10 10 40 NOT SPECIFIED
宽度 7.62 mm 3 mm 3 mm 7.62 mm 3 mm 2 mm 3.9 mm
最长写入周期时间 (tWC) 5 ms 5 ms 5 ms 10 ms 10 ms 5 ms 5 ms

 
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