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HY62EF16100CLLF-12: 产品描述Standard SRAM, 64KX16, 120ns, CMOS, PBGA48, FINE PITCH, BGA-48; 产品类别存储存储; 文件大小145KB，共8页; 制造商SK Hynix(海力士); 官网地址http://www.hynix.com/eng/

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HY62EF16100CLLF-12概述

Standard SRAM, 64KX16, 120ns, CMOS, PBGA48, FINE PITCH, BGA-48

HY62EF16100CLLF-12规格参数

参数名称	属性值
厂商名称	SK Hynix(海力士)
零件包装代码	BGA
包装说明	TFBGA,
针数	48
Reach Compliance Code	unknown
ECCN代码	EAR99
最长访问时间	120 ns
JESD-30 代码	R-PBGA-B48
JESD-609代码	e1
长度	6.3 mm
内存密度	1048576 bit
内存集成电路类型	STANDARD SRAM
内存宽度	16
功能数量	1
端子数量	48
字数	65536 words
字数代码	64000
工作模式	ASYNCHRONOUS
最高工作温度	70 °C
最低工作温度
组织	64KX16
封装主体材料	PLASTIC/EPOXY
封装代码	TFBGA
封装形状	RECTANGULAR
封装形式	GRID ARRAY, THIN PROFILE, FINE PITCH
并行/串行	PARALLEL
认证状态	Not Qualified
座面最大高度	1.1 mm
最大供电电压 (Vsup)	2.3 V
最小供电电压 (Vsup)	1.7 V
标称供电电压 (Vsup)	1.8 V
表面贴装	YES
技术	CMOS
温度等级	COMMERCIAL
端子面层	TIN SILVER COPPER
端子形式	BALL
端子节距	0.75 mm
端子位置	BOTTOM
宽度	6.2 mm
Base Number Matches	1

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HY62SF16100C Series

64Kx16bit full CMOS SRAM

PRELIMINARY

DESCRIPTION

The HY62SF16100C is a high speed, super low

power and 1M bit full CMOS SRAM organized as

65,536 words by 16bit. The HY62SF16100C uses

high performance full CMOS process technology

and designed for high speed low power circuit

technology. It is particularly well suited for used in

high density low power system application. This

device has a data retention mode that guarantees

data to remain valid at a minimum power supply

voltage of 1.2V.

FEATURES

•

Fully static operation and Tri-state output

•

TTL compatible inputs and outputs

•

Battery backup(LL/SL-part)

-. 1.2V(min) data retention

•

Standard pin configuration

-. 48 - FBGA

Product

Voltage

Speed

No.

(V)

(ns)

HY62EF16100C

1.7~2.3 85/100/120

HY62EF16100C-I

1.7~2.3 85/100/120

Note 1. Blank : Normal, I : Industrial

2. Current value is max.

Operation

Current/Icc(mA)

Standby Current(uA)

Temperature

(°C)

0~70

-40~85(I)

PIN CONNECTION

/LB

/OE A0

A1~A7

A14

A15

BLOCK DIAGRAM

ROW

DECODER

SENSE AMP

BUFFER

I/O1

IO9 /UB A3

IO10 IO11 A5

Vss IO12 NC

Vcc IO13 NC

/CS IO1

IO2 IO3

COLUMN

DECODER

I/O8

DATA I/O

BUFFER

ADD INPUT

BUFFER

PRE DECODER

IO4 Vcc

IO5 Vss

A10

A11

A12

MEMORY ARRAY

64K X 16

WRITE DRIVER

I/O9

DECODER

IO15 IO14 A14 A15 IO6 IO7

IO16 NC

A12 A13 /WE IO8

A10 A11 NC

A13

/CS

/OE

/LB

/UB

/WE

ADD INPUT

BUFFER

I/O16

FBGA

PIN DESCRIPTION

Pin Name

/CS

/WE

/OE

/LB

/UB

Pin Function

Chip Select

Write Enable

Output Enable

Low Byte Control(I/O1~I/O8)

Upper Byte Control(I/O9~I/O16)

Pin Name

I/O1~I/O16

A0~A15

Vcc

Vss

Pin Function

Data Inputs / Outputs

Address Inputs

Power(1.7V~2.3V)

Ground

No Connection

This document is a general product description and is subject to change without notice. Hyundai Electronics does not assume any

responsibility for use of circuits described. No patent licenses are implied.

Rev.02 /Jun. 00

Hyundai Semiconductor

HY62EF16100CLLF-12相似产品对比

	HY62EF16100CLLF-12	HY62EF16100CLLF-10	HY62EF16100CLLF-10I	HY62EF16100CSLF-12	HY62EF16100CSLF-12I	HY62EF16100CSLF-85	HY62EF16100CSLF-85I	HY62EF16100CLLF-12I	502259-2	5023520200_17
描述	Standard SRAM, 64KX16, 120ns, CMOS, PBGA48, FINE PITCH, BGA-48	Standard SRAM, 64KX16, 100ns, CMOS, PBGA48, FINE PITCH, BGA-48	Standard SRAM, 64KX16, 100ns, CMOS, PBGA48, FINE PITCH, BGA-48	Standard SRAM, 64KX16, 120ns, CMOS, PBGA48, FINE PITCH, BGA-48	Standard SRAM, 64KX16, 120ns, CMOS, PBGA48, FINE PITCH, BGA-48	Standard SRAM, 64KX16, 85ns, CMOS, PBGA48, FINE PITCH, BGA-48	Standard SRAM, 64KX16, 85ns, CMOS, PBGA48, FINE PITCH, BGA-48	Standard SRAM, 64KX16, 120ns, CMOS, PBGA48, FINE PITCH, BGA-48	THIS DRAWING IS A CONTROLLED DOCUMENT.	DuraClik Wire-to-Board Header, Single Row, Right Angle, 2 Circuits, Tin (Sn) Plating
零件包装代码	BGA	BGA	BGA	BGA	BGA	BGA	BGA	BGA	-	-
包装说明	TFBGA,	TFBGA,	TFBGA,	TFBGA,	TFBGA,	TFBGA,	TFBGA,	TFBGA,	-	-
针数	48	48	48	48	48	48	48	48	-	-
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown	unknown	unknown	unknown	-	-
ECCN代码	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	-	-
最长访问时间	120 ns	100 ns	100 ns	120 ns	120 ns	85 ns	85 ns	120 ns	-	-
JESD-30 代码	R-PBGA-B48	R-PBGA-B48	R-PBGA-B48	R-PBGA-B48	R-PBGA-B48	R-PBGA-B48	R-PBGA-B48	R-PBGA-B48	-	-
JESD-609代码	e1	e1	e1	e1	e1	e1	e1	e1	-	-
长度	6.3 mm	6.3 mm	6.3 mm	6.3 mm	6.3 mm	6.3 mm	6.3 mm	6.3 mm	-	-
内存密度	1048576 bit	1048576 bit	1048576 bit	1048576 bit	1048576 bit	1048576 bit	1048576 bit	1048576 bit	-	-
内存集成电路类型	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	-	-
内存宽度	16	16	16	16	16	16	16	16	-	-
功能数量	1	1	1	1	1	1	1	1	-	-
端子数量	48	48	48	48	48	48	48	48	-	-
字数	65536 words	65536 words	65536 words	65536 words	65536 words	65536 words	65536 words	65536 words	-	-
字数代码	64000	64000	64000	64000	64000	64000	64000	64000	-	-
工作模式	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	-	-
最高工作温度	70 °C	70 °C	85 °C	70 °C	85 °C	70 °C	85 °C	85 °C	-	-
组织	64KX16	64KX16	64KX16	64KX16	64KX16	64KX16	64KX16	64KX16	-	-
封装主体材料	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	-	-
封装代码	TFBGA	TFBGA	TFBGA	TFBGA	TFBGA	TFBGA	TFBGA	TFBGA	-	-
封装形状	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	-	-
封装形式	GRID ARRAY, THIN PROFILE, FINE PITCH	GRID ARRAY, THIN PROFILE, FINE PITCH	GRID ARRAY, THIN PROFILE, FINE PITCH	GRID ARRAY, THIN PROFILE, FINE PITCH	GRID ARRAY, THIN PROFILE, FINE PITCH	GRID ARRAY, THIN PROFILE, FINE PITCH	GRID ARRAY, THIN PROFILE, FINE PITCH	GRID ARRAY, THIN PROFILE, FINE PITCH	-	-
并行/串行	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	-	-
认证状态	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	-	-
座面最大高度	1.1 mm	1.1 mm	1.1 mm	1.1 mm	1.1 mm	1.1 mm	1.1 mm	1.1 mm	-	-
最大供电电压 (Vsup)	2.3 V	2.3 V	2.3 V	2.3 V	2.3 V	2.3 V	2.3 V	2.3 V	-	-
最小供电电压 (Vsup)	1.7 V	1.7 V	1.7 V	1.7 V	1.7 V	1.7 V	1.7 V	1.7 V	-	-
标称供电电压 (Vsup)	1.8 V	1.8 V	1.8 V	1.8 V	1.8 V	1.8 V	1.8 V	1.8 V	-	-
表面贴装	YES	YES	YES	YES	YES	YES	YES	YES	-	-
技术	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	-	-
温度等级	COMMERCIAL	COMMERCIAL	INDUSTRIAL	COMMERCIAL	INDUSTRIAL	COMMERCIAL	INDUSTRIAL	INDUSTRIAL	-	-
端子面层	TIN SILVER COPPER	TIN SILVER COPPER	TIN SILVER COPPER	TIN SILVER COPPER	TIN SILVER COPPER	TIN SILVER COPPER	TIN SILVER COPPER	TIN SILVER COPPER	-	-
端子形式	BALL	BALL	BALL	BALL	BALL	BALL	BALL	BALL	-	-
端子节距	0.75 mm	0.75 mm	0.75 mm	0.75 mm	0.75 mm	0.75 mm	0.75 mm	0.75 mm	-	-
端子位置	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	-	-
宽度	6.2 mm	6.2 mm	6.2 mm	6.2 mm	6.2 mm	6.2 mm	6.2 mm	6.2 mm	-	-
Base Number Matches	1	1	1	1	1	1	1	1	-	-

HY62EF16100CLLF-12

HY62EF16100CLLF-12概述

HY62EF16100CLLF-12规格参数

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