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HY62EF16100CLLF-10I

产品描述Standard SRAM, 64KX16, 100ns, CMOS, PBGA48, FINE PITCH, BGA-48
产品类别存储    存储   
文件大小145KB,共8页
制造商SK Hynix(海力士)
官网地址http://www.hynix.com/eng/
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HY62EF16100CLLF-10I概述

Standard SRAM, 64KX16, 100ns, CMOS, PBGA48, FINE PITCH, BGA-48

HY62EF16100CLLF-10I规格参数

参数名称属性值
零件包装代码BGA
包装说明TFBGA,
针数48
Reach Compliance Codeunknown
ECCN代码EAR99
最长访问时间100 ns
JESD-30 代码R-PBGA-B48
JESD-609代码e1
长度6.3 mm
内存密度1048576 bit
内存集成电路类型STANDARD SRAM
内存宽度16
功能数量1
端子数量48
字数65536 words
字数代码64000
工作模式ASYNCHRONOUS
最高工作温度85 °C
最低工作温度-40 °C
组织64KX16
封装主体材料PLASTIC/EPOXY
封装代码TFBGA
封装形状RECTANGULAR
封装形式GRID ARRAY, THIN PROFILE, FINE PITCH
并行/串行PARALLEL
认证状态Not Qualified
座面最大高度1.1 mm
最大供电电压 (Vsup)2.3 V
最小供电电压 (Vsup)1.7 V
标称供电电压 (Vsup)1.8 V
表面贴装YES
技术CMOS
温度等级INDUSTRIAL
端子面层TIN SILVER COPPER
端子形式BALL
端子节距0.75 mm
端子位置BOTTOM
宽度6.2 mm
Base Number Matches1

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HY62SF16100C Series
64Kx16bit full CMOS SRAM
PRELIMINARY
DESCRIPTION
The HY62SF16100C is a high speed, super low
power and 1M bit full CMOS SRAM organized as
65,536 words by 16bit. The HY62SF16100C uses
high performance full CMOS process technology
and designed for high speed low power circuit
technology. It is particularly well suited for used in
high density low power system application. This
device has a data retention mode that guarantees
data to remain valid at a minimum power supply
voltage of 1.2V.
FEATURES
Fully static operation and Tri-state output
TTL compatible inputs and outputs
Battery backup(LL/SL-part)
-. 1.2V(min) data retention
Standard pin configuration
-. 48 - FBGA
Product
Voltage
Speed
No.
(V)
(ns)
HY62EF16100C
1.7~2.3 85/100/120
HY62EF16100C-I
1.7~2.3 85/100/120
Note 1. Blank : Normal, I : Industrial
2. Current value is max.
Operation
Current/Icc(mA)
3
3
Standby Current(uA)
LL
SL
2
1
2
1
Temperature
(°C)
0~70
-40~85(I)
PIN CONNECTION
/LB
/OE A0
A1
A4
A6
A7
NC
A2
NC
A1~A7
A14
A15
BLOCK DIAGRAM
ROW
DECODER
SENSE AMP
BUFFER
I/O1
IO9 /UB A3
IO10 IO11 A5
Vss IO12 NC
Vcc IO13 NC
/CS IO1
IO2 IO3
COLUMN
DECODER
A8
I/O8
DATA I/O
BUFFER
ADD INPUT
BUFFER
PRE DECODER
IO4 Vcc
IO5 Vss
A9
A10
A11
A12
MEMORY ARRAY
64K X 16
WRITE DRIVER
I/O9
DECODER
IO15 IO14 A14 A15 IO6 IO7
IO16 NC
NC
A8
A12 A13 /WE IO8
A9
A10 A11 NC
A13
A0
/CS
/OE
/LB
/UB
/WE
ADD INPUT
BUFFER
I/O16
FBGA
PIN DESCRIPTION
Pin Name
/CS
/WE
/OE
/LB
/UB
Pin Function
Chip Select
Write Enable
Output Enable
Low Byte Control(I/O1~I/O8)
Upper Byte Control(I/O9~I/O16)
Pin Name
I/O1~I/O16
A0~A15
Vcc
Vss
NC
Pin Function
Data Inputs / Outputs
Address Inputs
Power(1.7V~2.3V)
Ground
No Connection
This document is a general product description and is subject to change without notice. Hyundai Electronics does not assume any
responsibility for use of circuits described. No patent licenses are implied.
Rev.02 /Jun. 00
Hyundai Semiconductor

HY62EF16100CLLF-10I相似产品对比

HY62EF16100CLLF-10I HY62EF16100CLLF-10 HY62EF16100CSLF-12 HY62EF16100CSLF-12I HY62EF16100CSLF-85 HY62EF16100CSLF-85I HY62EF16100CLLF-12I HY62EF16100CLLF-12 502259-2 5023520200_17
描述 Standard SRAM, 64KX16, 100ns, CMOS, PBGA48, FINE PITCH, BGA-48 Standard SRAM, 64KX16, 100ns, CMOS, PBGA48, FINE PITCH, BGA-48 Standard SRAM, 64KX16, 120ns, CMOS, PBGA48, FINE PITCH, BGA-48 Standard SRAM, 64KX16, 120ns, CMOS, PBGA48, FINE PITCH, BGA-48 Standard SRAM, 64KX16, 85ns, CMOS, PBGA48, FINE PITCH, BGA-48 Standard SRAM, 64KX16, 85ns, CMOS, PBGA48, FINE PITCH, BGA-48 Standard SRAM, 64KX16, 120ns, CMOS, PBGA48, FINE PITCH, BGA-48 Standard SRAM, 64KX16, 120ns, CMOS, PBGA48, FINE PITCH, BGA-48 THIS DRAWING IS A CONTROLLED DOCUMENT. DuraClik Wire-to-Board Header, Single Row, Right Angle, 2 Circuits, Tin (Sn) Plating
零件包装代码 BGA BGA BGA BGA BGA BGA BGA BGA - -
包装说明 TFBGA, TFBGA, TFBGA, TFBGA, TFBGA, TFBGA, TFBGA, TFBGA, - -
针数 48 48 48 48 48 48 48 48 - -
Reach Compliance Code unknown unknown unknown unknown unknown unknown unknown unknown - -
ECCN代码 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 - -
最长访问时间 100 ns 100 ns 120 ns 120 ns 85 ns 85 ns 120 ns 120 ns - -
JESD-30 代码 R-PBGA-B48 R-PBGA-B48 R-PBGA-B48 R-PBGA-B48 R-PBGA-B48 R-PBGA-B48 R-PBGA-B48 R-PBGA-B48 - -
JESD-609代码 e1 e1 e1 e1 e1 e1 e1 e1 - -
长度 6.3 mm 6.3 mm 6.3 mm 6.3 mm 6.3 mm 6.3 mm 6.3 mm 6.3 mm - -
内存密度 1048576 bit 1048576 bit 1048576 bit 1048576 bit 1048576 bit 1048576 bit 1048576 bit 1048576 bit - -
内存集成电路类型 STANDARD SRAM STANDARD SRAM STANDARD SRAM STANDARD SRAM STANDARD SRAM STANDARD SRAM STANDARD SRAM STANDARD SRAM - -
内存宽度 16 16 16 16 16 16 16 16 - -
功能数量 1 1 1 1 1 1 1 1 - -
端子数量 48 48 48 48 48 48 48 48 - -
字数 65536 words 65536 words 65536 words 65536 words 65536 words 65536 words 65536 words 65536 words - -
字数代码 64000 64000 64000 64000 64000 64000 64000 64000 - -
工作模式 ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS - -
最高工作温度 85 °C 70 °C 70 °C 85 °C 70 °C 85 °C 85 °C 70 °C - -
组织 64KX16 64KX16 64KX16 64KX16 64KX16 64KX16 64KX16 64KX16 - -
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY - -
封装代码 TFBGA TFBGA TFBGA TFBGA TFBGA TFBGA TFBGA TFBGA - -
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR - -
封装形式 GRID ARRAY, THIN PROFILE, FINE PITCH GRID ARRAY, THIN PROFILE, FINE PITCH GRID ARRAY, THIN PROFILE, FINE PITCH GRID ARRAY, THIN PROFILE, FINE PITCH GRID ARRAY, THIN PROFILE, FINE PITCH GRID ARRAY, THIN PROFILE, FINE PITCH GRID ARRAY, THIN PROFILE, FINE PITCH GRID ARRAY, THIN PROFILE, FINE PITCH - -
并行/串行 PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL - -
认证状态 Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified - -
座面最大高度 1.1 mm 1.1 mm 1.1 mm 1.1 mm 1.1 mm 1.1 mm 1.1 mm 1.1 mm - -
最大供电电压 (Vsup) 2.3 V 2.3 V 2.3 V 2.3 V 2.3 V 2.3 V 2.3 V 2.3 V - -
最小供电电压 (Vsup) 1.7 V 1.7 V 1.7 V 1.7 V 1.7 V 1.7 V 1.7 V 1.7 V - -
标称供电电压 (Vsup) 1.8 V 1.8 V 1.8 V 1.8 V 1.8 V 1.8 V 1.8 V 1.8 V - -
表面贴装 YES YES YES YES YES YES YES YES - -
技术 CMOS CMOS CMOS CMOS CMOS CMOS CMOS CMOS - -
温度等级 INDUSTRIAL COMMERCIAL COMMERCIAL INDUSTRIAL COMMERCIAL INDUSTRIAL INDUSTRIAL COMMERCIAL - -
端子面层 TIN SILVER COPPER TIN SILVER COPPER TIN SILVER COPPER TIN SILVER COPPER TIN SILVER COPPER TIN SILVER COPPER TIN SILVER COPPER TIN SILVER COPPER - -
端子形式 BALL BALL BALL BALL BALL BALL BALL BALL - -
端子节距 0.75 mm 0.75 mm 0.75 mm 0.75 mm 0.75 mm 0.75 mm 0.75 mm 0.75 mm - -
端子位置 BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM - -
宽度 6.2 mm 6.2 mm 6.2 mm 6.2 mm 6.2 mm 6.2 mm 6.2 mm 6.2 mm - -
Base Number Matches 1 1 1 1 1 1 1 1 - -
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