MDS1651 – Single N-channel Trench MOSFET 30V
MDS1651
Single N-Channel Trench MOSFET 30V, 11.6A, 17mΩ
General Description
The MDS1651 uses advanced MagnaChip’s MOSFET
Technology, which provides low on-state resistance,
high switching performance and excellent reliability.
MDS1651 is suitable device for PWM, load switching
and general purpose applications
.
Features
V
DS
= 30V
I
D
= 11.6A@V
GS
= 10V
R
DS(ON)
< 17m
@V
GS
= 10V
< 22m
@V
GS
= 4.5V
Applications
Portable application
6(D)
7(D)
8(D)
5(D)
D
2(S)
1(S)
4(G)
3(S)
G
S
Absolute Maximum Ratings (Ta = 25
o
C)
Characteristics
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Power Dissipation
(1)
Symbol
V
DSS
V
GSS
T
C
=25
o
C
T
C
=70
o
C
T
A
=25
o
C
T
A
=70
o
C
I
D
I
DM
P
D
E
AS
T
J
, T
stg
Rating
30
±20
11.6
9.2
50
3.1
2
80
-55~150
Unit
V
V
A
A
A
W
mJ
o
Single Pulse Avalanche Energy
(2)
Junction and Storage Temperature Range
C
Thermal Characteristics
Characteristics
Thermal Resistance, Junction-to-Ambient
(1)
Thermal Resistance, Junction-to-Case
Symbol
R
θJA
R
θJC
Rating
40
24
Unit
o
C/W
Nov. 2008. Version 1.0
1
MagnaChip Semiconductor Ltd.
MDS1651 – Single N-channel Trench MOSFET 30V
Ordering Information
Part Number
MDS1651T
MDS1651R
Temp. Range
-55~150
o
C
-55~150 C
o
Package
SO-8
SO-8
Packing
Tube
Tape & Reel
RoHS Status
Halogen Free
Halogen Free
Electrical Characteristics (Ta =25
o
C)
Characteristics
Static Characteristics
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Drain Cut-Off Current
Gate Leakage Current
Drain-Source ON Resistance
On-State Drain Current
Forward Transconductance
Dynamic Characteristics
Total Gate Charge
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Reverse Transfer Capacitance
Output Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Source-Drain Diode Forward Voltage
Source-Drain Diode Forward Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Note :
Symbol
Test Condition
Min
Typ
Max
Unit
BV
DSS
V
GS(th)
I
DSS
I
GSS
R
DS(ON)
I
D(ON)
g
fs
I
D
= 250µA, V
GS
= 0V
V
DS
= V
GS
, I
D
= 250µA
V
DS
= 30V, V
GS
= 0V
V
GS
= ±20V, V
DS
= 0V
V
GS
= 10V, I
D
= 11.6A
V
GS
= 4.5V, I
D
= 10A
V
DS
= 5V, V
GS
= 10V
V
DS
= 5V, I
D
= 11.0A
30
1.4
-
-
-
-
50
-
-
1.6
-
-
12.5
16.5
-
19
-
3
1
±0.1
17
22
-
-
V
µA
m
A
S
Q
g(10V)
Q
g(4.5V)
Q
gs
Q
gd
C
iss
C
rss
C
oss
t
d(on)
t
r
t
d(off)
t
f
V
GS
= 10V, V
DS
= 15V,
R
L
= 2.7 , R
G
= 3
V
DS
= 15V, V
GS
= 0V,
f = 1.0MHz
V
DS
= 15V, I
D
= 11.6A,
V
GS
= 10V
13.1
7.6
-
-
-
-
-
-
-
-
-
2.1
2.8
556
86
147
4.2
18.4
24.1
13.5
19.0
9.5
-
-
-
-
-
-
-
-
-
ns
pF
nC
V
SD
V
SD
t
rr
Q
rr
I
S
= 1A, V
GS
= 0V
I
S
= 4.5A, V
GS
= 0V
I
F
= 11.6A, dl/dt = 100A/µs
-
-
-
-
0.7
0.8
19
9
1.0
1.1
21
12
V
V
ns
nC
1. Surface mounted RF4 board with 2oz. Copper.
2. Starting TJ = 25°C, L = 1mH, IAS = 5A, VDD = 15V, VGS = 10V.
Nov. 2008. Version 1.0
2
MagnaChip Semiconductor Ltd.
MDS1651 – Single N-channel Trench MOSFET 30V
70
10.0V
6.0V
4.5V
25
Drain-Source On-Resistance[ohm]
60
50
20
I
D
, Drain Current[A]
V
GS
=4.5V
15
40
3.5V
30
20
V
GS
=10.0V
10
10
0
0
1
2
3
4
5
5
0
13
25
38
50
V
DS
, Drain-Source Voltage [V]
I
D
, Drain Current [A]
Fig.1 On-Region Characteristics
Fig.2 On-Resistance Variation with
Drain Current and Gate Voltage
1.8
50
I
D
=11.6A
1.6
]
Normalized
Drain-Source On-Resistance
1.2
40
r
DS(on)
Drain
Source On-Resistance [m
1.4
30
1.0
T
J
=125
℃
0.8
20
T
J
=25
℃
0.6
0.4
-75
-50
-25
0
25
50
75
100
125
150
175
10
2
4
6
8
10
T
J
, Junction Temperature (
℃
)
V
GS
, Gate To Source Voltage [V]
Fig.3 On-Resistance Variation with
Temperature
Fig.4 On-Resistance Variation with
Gate to Source Voltage
30
* Notes :
V
DS
=5V
25
10
1
20
I
DR
, Reverse Drain Current [A]
* Notes
V
GS
=0V
T
A
=125
℃
T
A
=25
℃
I
D
, Drain Current [A]
10
0
15
10
-1
10
125
℃
5
25
℃
T
A
=-55
℃
10
-2
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
10
-3
0.2
0.4
0.6
0.8
1.0
1.2
1.4
V
GS
, Gate-Source Voltge [V]
V
SD
, Source-Drain Voltage [V]
Fig.5 Transfer Characteristics
Fig.6 Body Diode Forward Voltage
Variation with Source Current and
Temperature
Nov. 2008. Version 1.0
3
MagnaChip Semiconductor Ltd.
MDS1651 – Single N-channel Trench MOSFET 30V
10
※
Note : I
D
= 11.6A
1.2n
C
iss
= C
gs
+ C
gd
(C
ds
= shorted)
C
oss
= C
ds
+ C
gd
C
rss
= C
gd
V
GS
, Gate-Source Voltage [V]
8
6
Capacitance [F]
800.0p
V
DS
= 15V
C
iss
4
400.0p
※
Notes ;
1. V
GS
= 0 V
2. f = 1 MHz
2
C
oss
C
rss
0
0
3
6
9
12
15
0.0
0
5
10
15
20
25
30
Q
G
, Total Gate Charge [nC]
V
DS
, Drain-Source Voltage [V]
Fig.7 Gate Charge Characteristics
Fig.8 Capacitance Characteristics
10
3
15
Operation in This Area
is Limited by R
DS(on)
10
2
12
I
D
, Drain Current [A]
1 ms
10
1
10 ms
100 ms
1s
10s
DC
I
D
, Drain Current [A]
10
2
9
10
0
6
10
-1
Single Pulse
T
J
=Max rated
T
C
=25
℃
-2
3
10
10
-1
10
0
10
1
V
DS
, Drain-Source Voltage [V]
0
25
50
75
100
125
150
T
C
, Case Temperature [
℃
]
Fig.9 Maximum Safe Operating Area
Fig.10 Maximum Drain Current vs. Case
Temperature
10
0
D=0.5
Normalized
Z
θ JC
Thermal Response
(t),
0.2
-1
10
0.1
0.05
0.02
0.01
※
Notes :
Duty Factor, D=t
1
/t
2
PEAK T
J
= P
DM
* Z
θ JC
* R
θ JC
+ T
C
(t)
R
Θ JA
℃
=40 /W
10
-2
single pulse
10
-3
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
10
3
t
1
, Rectangular Pulse Duration [sec]
Fig.11 Transient Thermal Response
Curve
Nov. 2008. Version 1.0
4
MagnaChip Semiconductor Ltd.
MDS1651 – Single N-channel Trench MOSFET 30V
Physical Dimensions
8 Leads SOIC
Dimensions are in millimeters unless otherwise specified
Nov. 2008. Version 1.0
5
MagnaChip Semiconductor Ltd.
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