SRAM Module, 256KX4, 45ns, CMOS, CDIP32,
参数名称 | 属性值 |
是否Rohs认证 | 不符合 |
厂商名称 | EDI [Electronic devices inc.] |
Reach Compliance Code | unknown |
最长访问时间 | 45 ns |
I/O 类型 | SEPARATE |
JESD-30 代码 | R-XDIP-T32 |
JESD-609代码 | e0 |
内存密度 | 1048576 bit |
内存集成电路类型 | SRAM MODULE |
内存宽度 | 4 |
端子数量 | 32 |
字数 | 262144 words |
字数代码 | 256000 |
工作模式 | ASYNCHRONOUS |
最高工作温度 | 125 °C |
最低工作温度 | -55 °C |
组织 | 256KX4 |
输出特性 | 3-STATE |
封装主体材料 | CERAMIC |
封装代码 | DIP |
封装等效代码 | DIP32,.4 |
封装形状 | RECTANGULAR |
封装形式 | IN-LINE |
并行/串行 | PARALLEL |
电源 | 5 V |
认证状态 | Not Qualified |
筛选级别 | MIL-STD-883 Class B (Modified) |
最大待机电流 | 0.04 A |
最小待机电流 | 4.5 V |
最大压摆率 | 0.48 mA |
标称供电电压 (Vsup) | 5 V |
表面贴装 | NO |
技术 | CMOS |
温度等级 | MILITARY |
端子面层 | Tin/Lead (Sn/Pb) |
端子形式 | THROUGH-HOLE |
端子节距 | 2.54 mm |
端子位置 | DUAL |
Base Number Matches | 1 |
EDI8M4258C45C4B | EDI8M4258P45C4B | EDI8M4258C55C4B | EDI8M4258P55C4B | EDI8M4258C35C4B | EDI8M4258P70C4B | EDI8M4258P35C4B | EDI8M4258C70C4B | |
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描述 | SRAM Module, 256KX4, 45ns, CMOS, CDIP32, | SRAM Module, 256KX4, 45ns, CMOS, CDIP32, | SRAM Module, 256KX4, 55ns, CMOS, CDIP32, | SRAM Module, 256KX4, 55ns, CMOS, CDIP32, | SRAM Module, 256KX4, 35ns, CMOS, CDIP32, | SRAM Module, 256KX4, 70ns, CMOS, CDIP32, | SRAM Module, 256KX4, 35ns, CMOS, CDIP32, | SRAM Module, 256KX4, 70ns, CMOS, CDIP32, |
是否Rohs认证 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 |
Reach Compliance Code | unknown | unknown | unknown | unknown | unknown | unknown | unknown | unknow |
最长访问时间 | 45 ns | 45 ns | 55 ns | 55 ns | 35 ns | 70 ns | 35 ns | 70 ns |
I/O 类型 | SEPARATE | SEPARATE | SEPARATE | SEPARATE | SEPARATE | SEPARATE | SEPARATE | SEPARATE |
JESD-30 代码 | R-XDIP-T32 | R-XDIP-T32 | R-XDIP-T32 | R-XDIP-T32 | R-XDIP-T32 | R-XDIP-T32 | R-XDIP-T32 | R-XDIP-T32 |
JESD-609代码 | e0 | e0 | e0 | e0 | e0 | e0 | e0 | e0 |
内存密度 | 1048576 bit | 1048576 bit | 1048576 bit | 1048576 bit | 1048576 bit | 1048576 bit | 1048576 bit | 1048576 bi |
内存集成电路类型 | SRAM MODULE | SRAM MODULE | SRAM MODULE | SRAM MODULE | SRAM MODULE | SRAM MODULE | SRAM MODULE | SRAM MODULE |
内存宽度 | 4 | 4 | 4 | 4 | 4 | 4 | 4 | 4 |
端子数量 | 32 | 32 | 32 | 32 | 32 | 32 | 32 | 32 |
字数 | 262144 words | 262144 words | 262144 words | 262144 words | 262144 words | 262144 words | 262144 words | 262144 words |
字数代码 | 256000 | 256000 | 256000 | 256000 | 256000 | 256000 | 256000 | 256000 |
工作模式 | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS |
最高工作温度 | 125 °C | 125 °C | 125 °C | 125 °C | 125 °C | 125 °C | 125 °C | 125 °C |
最低工作温度 | -55 °C | -55 °C | -55 °C | -55 °C | -55 °C | -55 °C | -55 °C | -55 °C |
组织 | 256KX4 | 256KX4 | 256KX4 | 256KX4 | 256KX4 | 256KX4 | 256KX4 | 256KX4 |
输出特性 | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE |
封装主体材料 | CERAMIC | CERAMIC | CERAMIC | CERAMIC | CERAMIC | CERAMIC | CERAMIC | CERAMIC |
封装代码 | DIP | DIP | DIP | DIP | DIP | DIP | DIP | DIP |
封装等效代码 | DIP32,.4 | DIP32,.4 | DIP32,.4 | DIP32,.4 | DIP32,.4 | DIP32,.4 | DIP32,.4 | DIP32,.4 |
封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
封装形式 | IN-LINE | IN-LINE | IN-LINE | IN-LINE | IN-LINE | IN-LINE | IN-LINE | IN-LINE |
并行/串行 | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL |
电源 | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V |
认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
筛选级别 | MIL-STD-883 Class B (Modified) | MIL-STD-883 Class B (Modified) | MIL-STD-883 Class B (Modified) | MIL-STD-883 Class B (Modified) | MIL-STD-883 Class B (Modified) | MIL-STD-883 Class B (Modified) | MIL-STD-883 Class B (Modified) | MIL-STD-883 Class B (Modified) |
最大待机电流 | 0.04 A | 0.002 A | 0.04 A | 0.002 A | 0.04 A | 0.002 A | 0.002 A | 0.04 A |
最小待机电流 | 4.5 V | 2 V | 4.5 V | 2 V | 4.5 V | 2 V | 2 V | 4.5 V |
最大压摆率 | 0.48 mA | 0.48 mA | 0.48 mA | 0.48 mA | 0.48 mA | 0.48 mA | 0.48 mA | 0.48 mA |
标称供电电压 (Vsup) | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V |
表面贴装 | NO | NO | NO | NO | NO | NO | NO | NO |
技术 | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS |
温度等级 | MILITARY | MILITARY | MILITARY | MILITARY | MILITARY | MILITARY | MILITARY | MILITARY |
端子面层 | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) |
端子形式 | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE |
端子节距 | 2.54 mm | 2.54 mm | 2.54 mm | 2.54 mm | 2.54 mm | 2.54 mm | 2.54 mm | 2.54 mm |
端子位置 | DUAL | DUAL | DUAL | DUAL | DUAL | DUAL | DUAL | DUAL |
厂商名称 | EDI [Electronic devices inc.] | - | EDI [Electronic devices inc.] | EDI [Electronic devices inc.] | EDI [Electronic devices inc.] | EDI [Electronic devices inc.] | EDI [Electronic devices inc.] | EDI [Electronic devices inc.] |
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