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IS61VPS51236-166B

产品描述Cache SRAM, 512KX36, 3.5ns, CMOS, PBGA119, PLASTIC, BGA-119
产品类别存储    存储   
文件大小164KB,共24页
制造商Integrated Silicon Solution ( ISSI )
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IS61VPS51236-166B概述

Cache SRAM, 512KX36, 3.5ns, CMOS, PBGA119, PLASTIC, BGA-119

IS61VPS51236-166B规格参数

参数名称属性值
是否无铅含铅
是否Rohs认证不符合
厂商名称Integrated Silicon Solution ( ISSI )
零件包装代码BGA
包装说明PLASTIC, BGA-119
针数119
Reach Compliance Codecompliant
ECCN代码3A991.B.2.A
最长访问时间3.5 ns
JESD-30 代码R-PBGA-B119
JESD-609代码e0
长度22 mm
内存密度18874368 bit
内存集成电路类型CACHE SRAM
内存宽度36
功能数量1
端子数量119
字数524288 words
字数代码512000
工作模式SYNCHRONOUS
最高工作温度70 °C
最低工作温度
组织512KX36
封装主体材料PLASTIC/EPOXY
封装代码BGA
封装形状RECTANGULAR
封装形式GRID ARRAY
并行/串行PARALLEL
峰值回流温度(摄氏度)240
认证状态Not Qualified
座面最大高度2.41 mm
最大供电电压 (Vsup)2.625 V
最小供电电压 (Vsup)2.375 V
标称供电电压 (Vsup)2.5 V
表面贴装YES
技术CMOS
温度等级COMMERCIAL
端子面层Tin/Lead (Sn/Pb)
端子形式BALL
端子节距1.27 mm
端子位置BOTTOM
处于峰值回流温度下的最长时间30
宽度14 mm
Base Number Matches1

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IS61VPS51232 IS61VPS51236 IS61VPS10018
512K x 32, 512K x 36, 1024K x 18
SYNCHRONOUS PIPELINED,
SINGLE-CYCLE DESELECT STATIC RAM
ISSI
®
ADVANCE INFORMATION
SEPTEMBER 2001
FEATURES
• Internal self-timed write cycle
• Individual Byte Write Control and Global Write
• Clock controlled, registered address, data and
control
• Linear burst sequence control using MODE input
• Three chip enable option for simple depth expansion
and address pipelining
• Common data inputs and data outputs
• JEDEC 100-Pin TQFP and
119-pin PBGA package
• Single +2.5V, ±5% operation
• Auto Power-down during deselect
• Single cycle deselect
• Snooze MODE for reduced-power standby
• JTAG Boundary Scan for PBGA package
DESCRIPTION
The
ISSI
IS61VPS51232, IS61VPS51236, and
IS61VPS10018 are high-speed, low-power synchronous
static RAMs designed to provide burstable, high-performance
memory for communication and networking applications.
The IS61VPS51232 is organized as 524,288 words by 32 bits
and the IS61VPS51236 is organized as 524,288 words by
36 bits. The IS61VPS10018 is organized as 1,048,576
words by 18 bits. Fabricated with
ISSI
's advanced CMOS
technology, the device integrates a 2-bit burst counter,
high-speed SRAM core, and high-drive capability outputs
into a single monolithic circuit. All synchronous inputs
pass through registers controlled by a positive-edge-
triggered single clock input.
Write cycles are internally self-timed and are initiated by
the rising edge of the clock input. Write cycles can be one
to four bytes wide as controlled by the write control inputs.
Separate byte enables allow individual bytes to be written.
Byte write operation is performed by using byte write
enable (BWE).input combined with one or more individual
byte write signals (BWx). In addition, Global Write (GW)
is available for writing all bytes at one time, regardless of
the byte write controls.
Bursts can be initiated with either
ADSP
(Address Status
Processor) or
ADSC
(Address Status Cache Controller)
input pins. Subsequent burst addresses can be generated
internally and controlled by the
ADV
(burst address
advance) input pin.
The mode pin is used to select the burst sequence order,
Linear burst is achieved when this pin is tied LOW.
Interleave burst is achieved when this pin is tied HIGH or
left floating.
FAST ACCESS TIME
Symbol
t
KQ
t
KC
Parameter
Clock Access Time
Cycle Time
Frequency
-200
3.1
5
200
-166
3.5
6
166
Units
ns
ns
MHz
This document contains ADVANCE INFORMATION data. ISSI reserves the right to make changes to its products at any time without notice in order to improve design and supply the best
possible product. We assume no responsibility for any errors which may appear in this publication. © Copyright 2001, Integrated Silicon Solution, Inc.
Integrated Silicon Solution, Inc. — 1-800-379-4774
ADVANCE INFORMATION
09/25/01
Rev. 00B
1

 
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