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BSS123T2: 产品描述Small Signal Field-Effect Transistor, 0.17A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET; 产品类别分立半导体晶体管; 文件大小39KB，共2页; 制造商Calogic; 官网地址http://www.calogic.net/

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BSS123T2概述

Small Signal Field-Effect Transistor, 0.17A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

BSS123T2规格参数

参数名称	属性值
厂商名称	Calogic
Reach Compliance Code	unknown
ECCN代码	EAR99
配置	SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压	100 V
最大漏极电流 (ID)	0.17 A
最大漏源导通电阻	6 Ω
FET 技术	METAL-OXIDE SEMICONDUCTOR
JESD-30 代码	R-PDSO-G3
元件数量	1
端子数量	3
工作模式	ENHANCEMENT MODE
最高工作温度	150 °C
封装主体材料	PLASTIC/EPOXY
封装形状	RECTANGULAR
封装形式	SMALL OUTLINE
极性/信道类型	N-CHANNEL
认证状态	Not Qualified
表面贴装	YES
端子形式	GULL WING
端子位置	DUAL
晶体管应用	SWITCHING
晶体管元件材料	SILICON
Base Number Matches	1

BSS123T2相似产品对比

	BSS123T2	BSS100LTR4	BSS100LTR1	BSS100LTA	BSS100LTR3	BSS100LTR2	BSS123T1
描述	Small Signal Field-Effect Transistor, 0.17A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET	Small Signal Field-Effect Transistor, 0.17A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92	Small Signal Field-Effect Transistor, 0.17A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92	Small Signal Field-Effect Transistor, 0.17A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92	Small Signal Field-Effect Transistor, 0.17A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92	Small Signal Field-Effect Transistor, 0.17A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92	Small Signal Field-Effect Transistor, 0.17A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
厂商名称	Calogic	Calogic	Calogic	Calogic	Calogic	Calogic	Calogic
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown	unknown	unknown
ECCN代码	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
配置	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压	100 V	100 V	100 V	100 V	100 V	100 V	100 V
最大漏极电流 (ID)	0.17 A	0.17 A	0.17 A	0.17 A	0.17 A	0.17 A	0.17 A
最大漏源导通电阻	6 Ω	6 Ω	6 Ω	6 Ω	6 Ω	6 Ω	6 Ω
FET 技术	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JESD-30 代码	R-PDSO-G3	O-PBCY-T3	O-PBCY-T3	O-PBCY-T3	O-PBCY-T3	O-PBCY-T3	R-PDSO-G3
元件数量	1	1	1	1	1	1	1
端子数量	3	3	3	3	3	3	3
工作模式	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE
最高工作温度	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C
封装主体材料	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
封装形状	RECTANGULAR	ROUND	ROUND	ROUND	ROUND	ROUND	RECTANGULAR
封装形式	SMALL OUTLINE	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	SMALL OUTLINE
极性/信道类型	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL
认证状态	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
表面贴装	YES	NO	NO	NO	NO	NO	YES
端子形式	GULL WING	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	GULL WING
端子位置	DUAL	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	DUAL
晶体管应用	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING
晶体管元件材料	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
包装说明	-	CYLINDRICAL, O-PBCY-T3	-	CYLINDRICAL, O-PBCY-T3	CYLINDRICAL, O-PBCY-T3	CYLINDRICAL, O-PBCY-T3	SMALL OUTLINE, R-PDSO-G3
JEDEC-95代码	-	TO-92	TO-92	TO-92	TO-92	TO-92	-

BSS123T2

BSS123T2概述

BSS123T2规格参数

BSS123T2相似产品对比

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