In MinMELF case especially for automated insertion
The zener voltage are graded according to the international E24
standard. Smaller voltage tolerances and higher zener voltage
on request
ZMM2.7 thru ZMM51are also available in DO-35 case with the type
designation ZPD2.7 thru ZPD51.
JF
０．０６３（１．６）
０．０５５（１．４）
０．１４２（３．６）
０．１３４（３．４）
０．０１９（０．４８）
０．０１１（０．２８）
MECHANICAL DATA
Case:
Mini-MELF(SOD-80)
glass case
Weight:
Approx. 0.05 gram
Dimensions in inches and (millimeters)
ABSOLUTE MAXIMUM RATINGS(LIMITING VALUES)
(T
A
=25 C)
Symbols
Zener current see table "Characteristics"
Power dissipation at T
A
=25 C
Junction temperature
Storage temperature range
Value
500
1)
175
-55 to+175
Units
P
tot
T
J
T
STG
mW
C
C
1) Valid provided that electrodes case are kept at ambient temperature
ELECTRICAL CHARACTERISTICS
(T
A
=25 C)
Symbols
Thermal resistance junction to ambient
Forward Voltage at I
F
= 100mA
Min
Typ
Max
300
1)
1
Units
K/W
V
R
JA
V
F
1) Valid provided that electrodes case are kept at ambient temperature
11-22
JINAN JINGHENG CO., LTD.
NO.51 HEPING ROAD PR CHINA
TEL:86-531-86943657
FAX:86-531-86947096
WWW.JIFUSEMICON.COM
ZENNER
DIODE
Mini-MELF
ZMM1 THRU ZMM200 SILICON PLANAR ZENER DIODES
Zener Voltage range
1)
Maximum zener impedance
1)
Type
ZMM1
3)
Maximum Reverse
Leakage Current
I
R
and IR at V
R
2)
Temp Coefficient
of zener voltage
TK
VZ
V
Z
NOM
3)
I
ZT
mA
V
0.7...0.8
1.9...2.1
2.28...2.56
2.5...2.9
2.8...3.2
3.1...3.5
3.4...3.8
3.7...4.1
4.0...4.6
4.4...5.0
4.8...5.4
5.2...6.0
5.8...6.6
5
6.4...7.2
7.0...7.9
7.7...8.7
8.5...9.6
9.4.10.6
10.4...11.6
11.4...12.7
12.4...14.1
13.8...15.6
15.3...17.1
16.8...19.1
18.8...21.2
20.8...23.3
22.8...25.6
25.1...28.9
28...32
<75
<60
<35
<25
<10
<8
<7
<7
<10
<15
<20
<20
<26
<30
<40
<50
<55
<55
<80
<80
<80
<85
r
Zjt
and
r
ZjK
at I
ZK
mA
<8
<50
A
--
<100
<50
<10
<600
<4
<2
<2
<2
<1
<0.5
<550
<450
<200
<150
<50
1
V
0.75
2.0
2.4
2.7
3.0
3.3
3.6
3.9
4.3
4.7
5.1
5.6
6.2
6.8
7.5
8.2
9.1
10
11
12
13
15
16
18
20
22
24
27
30
A
--
<200
<100
<50
<40
<40
<40
<40
<20
<10
V
--
%/K
-0.26...-0.23
-0.09...-0.06
-0.09...-0.06
-0.09...-0.06
-0.08...-0.05
-0.08...-0.05
ZMM2.0
ZMM2.4
ZMM2.7
ZMM3.0
ZMM3.3
ZMM3.6
ZMM3.9
ZMM4.3
ZMM4.7
ZMM5.1
ZMM5.6
ZMM6.2
ZMM6.8
ZMM7.5
ZMM8.2
ZMM9.1
ZMM10
ZMM11
ZMM12
ZMM13
ZMM15
ZMM16
ZMM18
ZMM20
ZMM22
ZMM24
ZMM27
ZMM30
1.0
-0.08...-0.05
-0.08...-0.05
-0.06...-0.03
-0.05...+0.02
-0.02...+0.02
-0.05...+0.05
0.03...0.06
0.03...0.07
0.03...0.08
0.03...0.09
0.03...0.1
0.03...0.11
0.03...0.11
0.03...0.11
0.03...0.11
0.03...0.11
0.03...0.11
0.03...0.11
0.03...0.11
0.04...0.12
0.04...0.12
0.04...0.12
0.04...0.12
2
3
5
6.2
6.8
7.5
8.2
<0.1
<2
9.1
10
11
12
13
15
16
<70
<70
<90
<110
<110
<170
<170
<220
18
20
22
11-23
JINAN JINGHENG CO., LTD.
NO.51 HEPING ROAD PR CHINA
TEL:86-531-86943657
FAX:86-531-86947096
WWW.JIFUSEMICON.COM
ZENNER
DIODE
ZMM1 THRU ZMM200 SILICON PLANAR ZENER DIODES
Zener Voltage range
1)
Maximum zener impedance
1)
Type
ZMM33
ZMM36
ZMM39
ZMM43
ZMM47
ZMM51
ZMM56
ZMM62
ZMM68
ZMM75
ZMM82
ZMM91
ZMM100
ZMM110
ZMM120
ZMM130
ZMM150
ZMM160
ZMM180
ZMM200
Maximum Reverse
Leakage Current
I
RR
at V
R
IR at V
R
I and
Temp Coefficient
of zener voltage
TK
VZ
V
24
27
30
33
36
39
43
47
0.04...0.12
%/K
V
Z
NOM
V
33
36
39
43
47
51
56
62
68
75
82
91
100
110
120
130
150
160
180
200
3)
I
ZT
mA
5
V
31...35
34...38
37...41
40...46
44...50
2.5
48...54
52...60
58...66
64...72
70...79
77...87
85...96
94...106
104...116
114...127
1
124...141
138...156
153...171
168...191
188...212
r
Zjt
and
r
ZjK
at I
ZK
mA
<80
<90
<110
<125
<135
<150
<200
<250
<300
<450
<1500
<2000
<5000
<5500
<6000
<6500
<7000
<8500
<10000
0.1
0.25
<220
<500
<600
<700
1
A
A
<2
<5
<1000
<0.1
<10
51
56
62
68
75
82
91
100
110
120
130
150
0.05...0.12
<450
<600
<800
<950
<1250
<1400
<1700
<2000
1) Tested with pulse tp=20ms
2) Valid provided that electrodes are kept at ambient temperature
3) The ZMM1 is a silicon diode with operation in forward direction. Hence, the index of all parameters should be "F" instead of "Z", Connect the cathode to the negative
pole.
11-24
JINAN JINGHENG CO., LTD.
NO.51 HEPING ROAD PR CHINA
TEL:86-531-86943657
FAX:86-531-86947096
WWW.JIFUSEMICON.COM
ZENNER
DIODE
ZMM1...ZMM200 SILICON PLANAR ZENER DIODES
BREAKDOWN CHARACTERISTICS AT T
J
= CONSTANT (PULSED)
mA
５０
ZMM2,7
ZMM3,9
ZMM3,3
ZMM...
４０
I
Z
３０
ZMM5,6
ZMM6,8
ZMM1
ZMM4,7
ZMM8,2
T
J
=25 C
２０
Test current I
Z
１０
5mA
０
０
１
２
３
４
５
V
Z
６
７
８
９
１０ Ｖ
BREAKDOWN CHARACTERISTICS AT T
J
= CONSTANT (PULSED)
mA
３０
T
J
=25 C
ZMM10
ZMM12
ZMM15
ZMM...
I
Z
２０
ZMM18
ZMM22
ZMM27
ZMM33
ZMM36
１０
Test current I
Z
5mA
０
０
１０
２０
V
Z
３０
４０ Ｖ
11-25
JINAN JINGHENG CO., LTD.
NO.51 HEPING ROAD PR CHINA
TEL:86-531-86943657
FAX:86-531-86947096
WWW.JIFUSEMICON.COM
ZENNER
DIODE
ZMM1...ZMM200 SILICON PLANAR ZENER DIODES
BREAKDOWN CHARACTERISTICS AT T
J
= CONSTANT (PULSED)
mA
１０
８
I
Z
６
T
J
=25 C
ZMM39
ZMM51
ZMM...
ZMM43
ZMM47
４
Test current I
Z
２
5mA
０
０
１０
２０
３０
４０
５０
V
Z
６０
７０
８０
９０
１００ Ｖ
Forward Characteristics
mA
５００
ZMM..
Admissible power dissipation
versus ambient temperature
valid provided that electrodes are kept at ambient temperature
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