SFH690AT/690BT/690ABT
Phototransistor Optocoupler
Miniflat SOP Package
FFEATURES
• Current Transfer Ratios
– SFH690AT, 50%–150%
– SFH690BT, 100%–300%
– SFH690ABT, 50%–300%
• SOP (Small Outline Package)
• Isolation Test Voltage, 3750
V
RMS
(1.0 s)
• High Collector-Emitter Breakdown Voltage,
V
CEO
=70 V
• Low Saturation Voltage
• Fast Switching Times
• Field-Effect Stable by TRIOS
(TRansparent IOn Shield)
• Temperature Stable
• Low Coupling Capacitance
• End-Stackable, .100" (2.54 mm) Spacing
• Underwriters Lab File #52744
APPLICATIONS
• High density mounting or space sensitive PCBs
• PLCs
• Telecommunication
DESCRIPTION
Dimensions in inches (mm)
4
3
0.190 (4.83)
0.170 (4.32)
Anode
1
Cathode
2
4
Collector
Emitter
3
1
2
0.024 (0.61)
0.034 (0.86)
0.080 (2.03)
0.075 (1.91)
Pin one I.D. (on chamfer side of package)
0.184 (4.67)
0.220 (5.59)
0.164 (4.17)
0.200 (5.08)
40
0.018 (0.46)
6
10
0.013 (0.33)
0.008 (0.20)
0.004 (0.10)
0.018 (0.46)
0.014 (0.36)
0.105 (2.67)
0.095 (2.41)
LEADS COPLANARITY
0.004 (0.10) Max.
0.025 (0.63)
0.015 (0.38)
0.284 (7.21)
0.264 (6.71)
Absolute Maximum Ratings,
T
A
=25
°
C (except where noted)
Emitter
The SFH690xT family has a GaAs infrared emitting diode Reverse Voltage ............................................................................... 6.0 V
emitter, which is optically coupled to a silicon planar pho- DC Forward Current.......................................................................50 mA
totransistor detector, and is incorporated in a 4 pin 100
Surge Forward Current (t
P
≤
10
µ
s)....................................................2.5 A
mil lead pitch miniflat package. It features a high current Total Power Dissipation ............................................................... 80 mW
transfer ratio, low coupling capacitance, and high isola-
Detector
tion voltage.
Collector-Emitter Voltage .................................................................. 70 V
Emitter-Collector Voltage ................................................................. 7.0 V
The coupling devices are designed for signal transmis-
Collector Current............................................................................50 mA
sion between two electrically separated circuits.
Collector Current (t
P
≤
1.0 ms).......................................................100 mA
The SFH690xT will be offered in tape and reel format
Total Power Dissipation ............................................................. 150 mW
only. There are 2000 parts per reel. For the SFH690AT,
Package
the product will be marked as SFH690A and the
Isolation Test Voltage between Emitter and
SFH690BT will be marked as SFH690B. The
Detector (1.0 s)....................................................................3750
V
RMS
SFH690ABT will be marked as SFH690A or SFH690B.
Creepage
.......................................................................................... ≥
5.33 mm
Clearance
.......................................................................................... ≥
5.08 mm
Insulation Thickness between Emitter and Detector
.................. ≥
0.4 mm
Comparative Tracking Index
per DIN IEC 112/VDE0 303, part 1
.................................................... ≥
175
Isolation Resistance
V
IO
=500 V,
T
A
=25
°
C
........................................................................ ≥
10
12
Ω
V
IO
=500 V,
T
A
=100
°
C
..................................................................... ≥
10
11
Ω
Storage Temperature Range ............................................. –55 to +150
°
C
Ambient Temperature Range............................................ –55 to +100
°
C
Junction Temperature .................................................................... 100
°
C
Soldering Temperature (max. 10 s Dip Soldering
Distance to Seating Plane
≥
1.5 mm) .......................................... 260
°
C
2001 Infineon Technologies Corp. • Optoelectronics Division • San Jose, CA
www.infineon.com/opto • 1-888-Infineon (1-888-463-4636)
2–262
February 29, 2000-11
Figure 2. Diode Forward Voltage vs. Forward Current
Figure 5. Collector Current vs. Collector-Emitter Saturation
Voltage
100.000
1.6
T=–55°C
Forward Voltage,
V
F
(V)
T=–25°C
1.4
T=0°C
1.1
T=100°C
0.9
T=75°C
T=50°C
T=25°C
0.6
0.01
0.10
1.00
10.00
Forward Current,
I
F
(mA)
100.00
Collector Current (mA)
10.000
1.000
I
F
=25 mA
0.100
I
F
=10 mA
I
F
=5.0 mA
I
F
=2.0 mA
I
F
=1.0 mA
0.010
0.001
0.0
0.2
0.4
0.6
0.8
1.0
Collector-emitter Saturation Voltage,
V
CE
(sat)(V)
Figure 3. Collector Current vs. Collector Emitter Voltage
80
Figure 6. Normalized Output Current vs. Ambient
Temperature
1.4
Normalized Output Current, CTR
1.2
1.0
0.8
0.6
0.4
0.2 Normalized to 1.0 at
T
A
=25°C
I
F
=1.0 mA,
V
CE
=5.0 V
0.0
–60
–40
–20
0
20
Collector Current,
I
C
(mA)
70
60
50
I
F
=20 mA
40
I
F
=15 mA
30
20
10
0
0
2
4
6
8
Collector to Emitter Voltage,
V
CE
(V)
10
I
F
=5mA
I
F
=10 mA
I
F
=30 mA
40
60
80
100
Ambient Temperature,
T
A
(°C)
Figure 4. Collector to Emitter Dark Current vs. Ambient
Temperature
Collector-Emitter Dark Current,
I
CEO
(nA)
Figure 7. Normalized Output Current vs. Ambient
Temperature
1.2
Normalized Output Current, CTR
1.0
0.8
0.6
0.4
0.2
0.0
–60
1000.0
24 V
100.0
40 V
12 V
10.0
1.0
–60
–40
–20
0
20
40
60
Ambient Temperature,
T
A
(°C)
80
100
Normalized to 1.0 at
T
A
=25°C
I
F
=5.0 mA,
V
CE
=5.0 V
–40
–20
0
20
40
60
80
100
Ambient Temperature,
T
A
(°C)
2001 Infineon Technologies Corp. • Optoelectronics Division • San Jose, CA
www.infineon.com/opto • 1-888-Infineon (1-888-463-4636)
2–264
SFH690AT/690BT/690ABT
February 29, 2000-11
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