Datasheet> 器件分类 > 分立半导体> 晶体管> CMUDM7005TRLEADFREE

文档预览

CMUDM7005TRLEADFREE: 产品描述Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET; 产品类别分立半导体晶体管; 文件大小393KB，共2页; 制造商Central Semiconductor; 标准

下载文档详细参数选型对比全文预览

CMUDM7005TRLEADFREE概述

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

CMUDM7005TRLEADFREE规格参数

参数名称	属性值
是否Rohs认证	符合
包装说明	,
Reach Compliance Code	compliant
配置	Single
最大漏极电流 (Abs) (ID)	0.65 A
FET 技术	METAL-OXIDE SEMICONDUCTOR
工作模式	ENHANCEMENT MODE
最高工作温度	150 °C
极性/信道类型	N-CHANNEL
最大功率耗散 (Abs)	0.3 W
表面贴装	YES
Base Number Matches	1

文档预览

下载PDF文档

全文
预览

CMUDM7005

SURFACE MOUNT

N-CHANNEL

ENHANCEMENT-MODE

SILICON MOSFET

w w w. c e n t r a l s e m i . c o m

DESCRIPTION:

The CENTRAL SEMICONDUCTOR CMUDM7005

is an Enhancement-mode N-Channel MOSFET,

manufactured by the N-Channel DMOS Process,

designed for high speed pulsed amplifier and driver

applications. This MOSFET offers Low rDS(ON) and

Low Theshold Voltage.

MARKING CODE: 5C7

SOT-523 CASE

APPLICATIONS:

• Load/Power Switches

• Power Supply Converter Circuits

• Battery Powered Portable Equipment

MAXIMUM RATINGS:

(TA=25°C)

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current (Steady State - Note 1)

Continuous Source Current (Body Diode)

Maximum Pulsed Drain Current

Power Dissipation (Note 1)

Operating and Storage Junction Temperature

FEATURES:

•

ESD Protection up to 2kV

300mW Power Dissipation

Very Low rDS(ON)

Low Threshold Voltage

Logic Level Compatible

Small, SOT-523 Surface Mount Package

UNITS

°C

SYMBOL

VDS

VGS

IDM

TJ, Tstg

8.0

650

280

1.3

300

-65 to +150

ELECTRICAL CHARACTERISTICS:

(TA=25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

TYP

IGSSF, IGSSR VGS=4.5V, VDS=0

IDSS

BVDSS

VGS(th)

VSD

rDS(ON)

Qg(tot)

Qgs

Qgd

VDS=16V, VGS=0

VGS=0, ID=250μA

VDS=VGS, ID=250μA

VGS=0, IS=200mA

VGS=4.5V,

VGS=2.5V,

VGS=1.8V,

VGS=1.5V,

ID=600mA

ID=500mA

ID=350mA

ID=40mA

1.58

0.17

0.24

0.5

MAX

1.0

100

UNITS

μA

1.1

0.14

0.2

0.23

0.275

0.7

9.5

VDS=10V, VGS=4.5V, ID=500mA

Notes: (1) Mounted on 2 inch square FR-4 PCB with copper mounting pad area of 1.13in

R3 (27-September 2011)

CMUDM7005TRLEADFREE相似产品对比

	CMUDM7005TRLEADFREE	CMUDM7005TRTIN/LEAD
描述	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
是否Rohs认证	符合	不符合
Reach Compliance Code	compliant	unknown
配置	Single	Single
最大漏极电流 (Abs) (ID)	0.65 A	0.65 A
FET 技术	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
工作模式	ENHANCEMENT MODE	ENHANCEMENT MODE
最高工作温度	150 °C	150 °C
极性/信道类型	N-CHANNEL	N-CHANNEL
最大功率耗散 (Abs)	0.3 W	0.3 W
表面贴装	YES	YES
Base Number Matches	1	1

推荐资源

NTC热敏电阻温度控制器电路图

湿度检测器电路

ADXL05型带有信号调节±1g至±5g的单片加速度传感器电路

光学编码器脉冲发生电路

交流电源相序指示器

器件捷径: A0 A1 A2 A3 A4 A5 A6 A7 A8 A9 AA AB AC AD AE AF AG AH AI AJ AK AL AM AN AO AP AQ AR AS AT AU AV AW AX AY AZ B0 B1 B2 B3 B4 B5 B6 B7 B8 B9 BA BB BC BD BE BF BG BH BI BJ BK BL BM BN BO BP BQ BR BS BT BU BV BW BX BY BZ C0 C1 C2 C3 C4 C5 C6 C7 C8 C9 CA CB CC CD CE CF CG CH CI CJ CK CL CM CN CO CP CQ CR CS CT CU CV CW CX CY CZ D0 D1 D2 D3 D4 D5 D6 D7 D8 D9 DA DB DC DD DE DF DG DH DI DJ DK DL DM DN DO DP DQ DR DS DT DU DV DW DX DZ

热门器件

开源项目推荐更多

热门活动更多

热门文章更多

技术资料推荐更多