Datasheet> 器件分类 > 分立半导体> 晶体管> CMKT2222ABK

文档预览

CMKT2222ABK: 产品描述Small Signal Bipolar Transistor, 0.6A I(C), 40V V(BR)CEO, 2-Element, NPN, Silicon, PLASTIC PACKAGE-3; 产品类别分立半导体晶体管; 文件大小493KB，共2页; 制造商Central Semiconductor

下载文档详细参数选型对比全文预览

CMKT2222ABK概述

Small Signal Bipolar Transistor, 0.6A I(C), 40V V(BR)CEO, 2-Element, NPN, Silicon, PLASTIC PACKAGE-3

CMKT2222ABK规格参数

参数名称	属性值
是否Rohs认证	不符合
包装说明	SMALL OUTLINE, R-PDSO-G6
针数	3
Reach Compliance Code	not_compliant
ECCN代码	EAR99
最大集电极电流 (IC)	0.6 A
集电极-发射极最大电压	40 V
配置	SEPARATE, 2 ELEMENTS
最小直流电流增益 (hFE)	40
JESD-30 代码	R-PDSO-G6
JESD-609代码	e0
元件数量	2
端子数量	6
最高工作温度	150 °C
封装主体材料	PLASTIC/EPOXY
封装形状	RECTANGULAR
封装形式	SMALL OUTLINE
极性/信道类型	NPN
最大功率耗散 (Abs)	0.35 W
认证状态	Not Qualified
表面贴装	YES
端子面层	Tin/Lead (Sn/Pb)
端子形式	GULL WING
端子位置	DUAL
晶体管应用	SWITCHING
晶体管元件材料	SILICON
标称过渡频率 (fT)	300 MHz
最大关闭时间（toff）	285 ns
最大开启时间（吨）	35 ns
Base Number Matches	1

文档预览

下载PDF文档

全文
预览

CMKT2222A

SURFACE MOUNT

DUAL NPN SMALL SIGNAL

SILICON SWITCHING

TRANSISTORS

w w w. c e n t r a l s e m i . c o m

DESCRIPTION:

The CENTRAL SEMICONDUCTOR CMKT2222A

consists of two individually isolated 2222A NPN silicon

transistors, manufactured by the epitaxial planar

process and epoxy molded in an SOT-363 surface

mount package. This ULTRAmini™ device has

been designed for small signal general purpose and

switching applications.

MARKING CODE: K22

SOT-363 CASE

MAXIMUM RATINGS:

(TA=25°C)

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Continuous Collector Current

Power Dissipation

Operating and Storage Junction Temperature

Thermal Resistance

SYMBOL

VCBO

VCEO

VEBO

TJ, Tstg

6.0

600

350

-65 to +150

357

UNITS

°C

°C/W

UNITS

μA

0.3

1.0

0.6

100

300

8.0

MHz

300

1.2

2.0

ELECTRICAL CHARACTERISTICS PER TRANSISTOR:

(TA=25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

MAX

ICBO

VCB=60V

ICBO

ICEV

IEBO

BVCBO

BVCEO

BVEBO

VCE(SAT)

VBE(SAT)

hFE

Cob

Cib

VCB=60V, TA=125°C

VCE=60V, VEB=3.0V

VEB=3.0V

IC=10μA

IC=10mA

IE=10μA

IC=150mA, IB=15mA

IC=500mA, IB=50mA

IC=150mA, IB=15mA

IC=500mA, IB=50mA

VCE=10V, IC=0.1mA

VCE=10V, IC=1.0mA

VCE=10V, IC=10mA

VCE=1.0V, IC=150mA

VCE=10V, IC=150mA

VCE=10V, IC=500mA

VCE=20V, IC=20mA, f=100MHz

VCB=10V, IE=0, f=1.0MHz

VEB=0.5V, IC=0, f=1.0MHz

6.0

R4 (13-January 2010)

CMKT2222ABK相似产品对比

	CMKT2222ABK	CMKT2222ABKLEADFREE	CMKT2222ATR	CMKT2222ATRLEADFREE	CMKT2222ALEADFREE
描述	Small Signal Bipolar Transistor, 0.6A I(C), 40V V(BR)CEO, 2-Element, NPN, Silicon, PLASTIC PACKAGE-3	Transistor	Small Signal Bipolar Transistor, 0.6A I(C), 40V V(BR)CEO, 2-Element, NPN, Silicon, PLASTIC PACKAGE-3	Transistor	Small Signal Bipolar Transistor, 0.6A I(C), 40V V(BR)CEO, 2-Element, NPN, Silicon, PLASTIC PACKAGE-3
是否Rohs认证	不符合	符合	不符合	符合	符合
包装说明	SMALL OUTLINE, R-PDSO-G6	,	SMALL OUTLINE, R-PDSO-G6	,	SMALL OUTLINE, R-PDSO-G6
Reach Compliance Code	not_compliant	compliant	not_compliant	compliant	compliant
最大集电极电流 (IC)	0.6 A	0.6 A	0.6 A	0.6 A	0.6 A
最小直流电流增益 (hFE)	40	100	40	100	40
极性/信道类型	NPN	NPN	NPN	NPN	NPN
表面贴装	YES	YES	YES	YES	YES
标称过渡频率 (fT)	300 MHz	300 MHz	300 MHz	300 MHz	300 MHz
针数	3	-	3	-	3
ECCN代码	EAR99	-	EAR99	-	EAR99
集电极-发射极最大电压	40 V	-	40 V	-	40 V
配置	SEPARATE, 2 ELEMENTS	-	SEPARATE, 2 ELEMENTS	-	SEPARATE, 2 ELEMENTS
JESD-30 代码	R-PDSO-G6	-	R-PDSO-G6	-	R-PDSO-G6
JESD-609代码	e0	-	e0	-	e3
元件数量	2	-	2	-	2
端子数量	6	-	6	-	6
最高工作温度	150 °C	150 °C	150 °C	150 °C	-
封装主体材料	PLASTIC/EPOXY	-	PLASTIC/EPOXY	-	PLASTIC/EPOXY
封装形状	RECTANGULAR	-	RECTANGULAR	-	RECTANGULAR
封装形式	SMALL OUTLINE	-	SMALL OUTLINE	-	SMALL OUTLINE
最大功率耗散 (Abs)	0.35 W	0.35 W	0.35 W	0.35 W	-
认证状态	Not Qualified	-	Not Qualified	-	Not Qualified
端子面层	Tin/Lead (Sn/Pb)	-	Tin/Lead (Sn/Pb)	-	MATTE TIN (315)
端子形式	GULL WING	-	GULL WING	-	GULL WING
端子位置	DUAL	-	DUAL	-	DUAL
晶体管应用	SWITCHING	-	SWITCHING	-	SWITCHING
晶体管元件材料	SILICON	-	SILICON	-	SILICON
最大关闭时间（toff）	285 ns	-	285 ns	-	285 ns
最大开启时间（吨）	35 ns	-	35 ns	-	35 ns
厂商名称	-	-	Central Semiconductor	Central Semiconductor	Central Semiconductor

CMKT2222ABK

CMKT2222ABK概述

CMKT2222ABK规格参数

文档预览

CMKT2222ABK相似产品对比

推荐资源