1N4449
FEATURES :
• High switching speed: max. 4 ns
• Reverse voltage:max. 75V
• Peak reverse voltage:max. 100 V
• Pb / RoHS Free
HIGH SPEED SWITCHING DIODE
DO - 35 Glass
(DO-204AH)
0.079(2.0 )max.
1.00 (25.4)
min.
Cathode
Mark
0.150 (3.8)
max.
MECHANICAL DATA :
Case:
DO-35 Glass Case
Weight:
approx. 0.13g
0.020 (0.52)max.
1.00 (25.4)
min.
Dimensions in inches and ( millimeters )
Maximum Ratings and Thermal Characteristics
( Ta = 25 °C)
Parameter
Maximum Peak Reverse Voltage
Maximum Reverse Voltage
Maximum Forward DC Current
Maximum Average Forward Current
Maximum Surge Forward Current at tp = 1 µs
Power Dissipation
Maximum Junction Temperature
Storage Temperature Range
Symbol
V
RM
V
R
I
F
I
F(AV)
I
FSM
P
D
T
J
T
STG
Value
100
75
200
150
2
500
200
-65 to + 200
Unit
V
V
mA
mA
A
mW
°C
°C
Electrical Characteristics
Parameter
Reverse Current
Forward Voltage
( Ta = 25 °C)
Symbol
I
R
Test Condition
V
R
= 20 V
V
R
= 20 V , Tj = 150
°C
I
F
= 5 mA
I
F
= 30 mA
I
R
= 100
μA
(pulsed)
f = 1MHz ; V
R
= 0
I
F
= 10 mA ,V
R
= 6 V,
R
L
= 100
Ω
Min.
-
-
0.63
-
100
-
-
Typ.
-
-
-
-
-
-
-
Max.
25
50
0.73
1.0
-
2
4
Unit
nA
μA
V
V
pF
ns
V
F
V
(BR)R
Cd
Trr
Reverse Breakdown Voltage
Diode Capacitance
Reverse Recovery Time
Page 1 of 2
Rev. 01 : May 9, 2006
RATING AND CHARACTERISTIC CURVES ( 1N4449 )
FIG1. - FORWARD CURRENT VS.
FORWARD VOLTAGE
1000
FIG.2 - REVERSE CURRENT VS.
JUNCTION TEMPERATURE
10000
T
J
= 100 °C
FORWARD CURRENT, I
F
(mA)
100
REVERSE CURRENT, I
R
(nA)
1000
T
J
= 125
10
100
T
J
= 25 °C
T
J
= 25 °C
1.0
10
0.1
0
0.2
0.4
0.6
0.8
1.0
1.2
1.0
0
20
40
60
80
100
FORWARD VOLTAGE , V
F
(V)
REVERSE VOLTAGE , V
R
(V)
FIG3. - CAPACITANCE BETWEEN
TERMINALS VS. REVERSE VOLTAGE
2.5
FIG. 4 - REVERSE RECOVERY TIME VS.
FORWARD CURRENT
REVERSE RECOVERY TIME, Trr (ns)
10
Ta = 25 °C
8
DIODE CAPACITANCE, Cd (pF)
f = 1 MHz
Ta = 25 °C
2.0
1.5
6
1.0
4
0.5
2
0
0
10
20
30
0
0
5
10
15
20
25
REVERSE VOLTAGE , V
R
(V)
REVERSE VOLTAGE , V
R
(V)
Page 2 of 2
Rev. 01 : May 9, 2006
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