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CMPT3019TR13: 产品描述Small Signal Bipolar Transistor, 0.5A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, PLASTIC PACKAGE-3; 产品类别分立半导体晶体管; 文件大小99KB，共2页; 制造商Central Semiconductor

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CMPT3019TR13概述

Small Signal Bipolar Transistor, 0.5A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, PLASTIC PACKAGE-3

CMPT3019TR13规格参数

参数名称	属性值
是否无铅	含铅
是否Rohs认证	不符合
包装说明	PLASTIC PACKAGE-3
针数	3
Reach Compliance Code	not_compliant
ECCN代码	EAR99
最大集电极电流 (IC)	0.5 A
基于收集器的最大容量	12 pF
集电极-发射极最大电压	80 V
配置	SINGLE
最小直流电流增益 (hFE)	50
JESD-30 代码	R-PDSO-G3
JESD-609代码	e0
元件数量	1
端子数量	3
最高工作温度	150 °C
封装主体材料	PLASTIC/EPOXY
封装形状	RECTANGULAR
封装形式	SMALL OUTLINE
峰值回流温度（摄氏度）	NOT SPECIFIED
极性/信道类型	NPN
认证状态	Not Qualified
表面贴装	YES
端子面层	TIN LEAD
端子形式	GULL WING
端子位置	DUAL
处于峰值回流温度下的最长时间	NOT SPECIFIED
晶体管应用	AMPLIFIER
晶体管元件材料	SILICON
标称过渡频率 (fT)	100 MHz
VCEsat-Max	0.5 V
Base Number Matches	1

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CMPT3019

NPN SILICON TRANSISTOR

Central

Semiconductor Corp.

DESCRIPTION:

The CENTRAL SEMICONDUCTOR CMPT3019

type is an NPN silicon transistor manufactured

by the epitaxial planar process, epoxy molded in

a surface mount package, designed for very

high current, general purpose amplifier

applications.

MARKING CODE: C3A

SOT-23 CASE

MAXIMUM RATINGS:

(TA=25°C)

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Continuous Collector Current

Peak Collector Current

Power Dissipation

Operating and Storage

Junction Temperature

Thermal Resistance

TJ,Tstg

-65 to +150

357

°C

°C/W

SYMBOL

VCBO

VCEO

VEBO

ICM

120

7.0

500

1.0

350

UNITS

ELECTRICAL CHARACTERISTICS:

(TA=25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

ICBO

IEBO

BVCBO

BVCEO

BVEBO

VCE(SAT)

VBE(SAT)

hFE

Cob

Cib

VCB=90V

VEB=5.0V

IC=100µA

IC=30mA

IE=100µA

IC=150mA, IB=15mA

IC=500mA, IB=50mA

IC=150mA, IB=15mA

VCE=10V, IC=0.1mA

VCE=10V, IC=10mA

VCE=10V, IC=150mA

VCE=10V, IC=500mA

VCE=10V, IC=50mA, f=1.0MHz

VCB=10V, IE=0, f=1.0MHz

VEB=0.5V, IC=0, f=1.0MHz

VCE=10V, IC=100mA, RS=1kΩ, f=1.0kHz

120

7.0

MAX

UNITS

0.2

0.5

1.1

100

4.0

300

MHz

R2 (13-November 2002)

CMPT3019TR13相似产品对比

	CMPT3019TR13	CMPT3019TRLEADFREE	CMPT3019BKLEADFREE	CMPT3019TR	CMPT3019TR13LEADFREE	CMPT3019BK
描述	Small Signal Bipolar Transistor, 0.5A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, PLASTIC PACKAGE-3	Small Signal Bipolar Transistor, 0.5A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, PLASTIC PACKAGE-3	Small Signal Bipolar Transistor, 0.5A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, PLASTIC PACKAGE-3	Small Signal Bipolar Transistor, 0.5A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, PLASTIC PACKAGE-3	Small Signal Bipolar Transistor, 0.5A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, PLASTIC PACKAGE-3	Small Signal Bipolar Transistor, 0.5A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, PLASTIC PACKAGE-3
是否无铅	含铅	不含铅	不含铅	含铅	不含铅	含铅
是否Rohs认证	不符合	符合	符合	不符合	符合	不符合
包装说明	PLASTIC PACKAGE-3	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3
针数	3	3	3	3	3	3
Reach Compliance Code	not_compliant	compliant	compliant	not_compliant	compliant	not_compliant
ECCN代码	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
最大集电极电流 (IC)	0.5 A	0.5 A	0.5 A	0.5 A	0.5 A	0.5 A
基于收集器的最大容量	12 pF	12 pF	12 pF	12 pF	12 pF	12 pF
集电极-发射极最大电压	80 V	80 V	80 V	80 V	80 V	80 V
配置	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
最小直流电流增益 (hFE)	50	50	50	50	50	50
JESD-30 代码	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3
JESD-609代码	e0	e3	e3	e0	e3	e0
元件数量	1	1	1	1	1	1
端子数量	3	3	3	3	3	3
最高工作温度	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C
封装主体材料	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
封装形状	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
封装形式	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
峰值回流温度（摄氏度）	NOT SPECIFIED	260	260	NOT SPECIFIED	260	NOT SPECIFIED
极性/信道类型	NPN	NPN	NPN	NPN	NPN	NPN
认证状态	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
表面贴装	YES	YES	YES	YES	YES	YES
端子面层	TIN LEAD	Matte Tin (Sn)	Matte Tin (Sn)	TIN LEAD	Matte Tin (Sn)	TIN LEAD
端子形式	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING
端子位置	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL
处于峰值回流温度下的最长时间	NOT SPECIFIED	10	10	NOT SPECIFIED	10	NOT SPECIFIED
晶体管应用	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER
晶体管元件材料	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
标称过渡频率 (fT)	100 MHz	100 MHz	100 MHz	100 MHz	100 MHz	100 MHz
VCEsat-Max	0.5 V	0.5 V	0.5 V	0.5 V	0.5 V	0.5 V
Base Number Matches	1	1	1	1	1	1
最大功率耗散 (Abs)	-	0.35 W	0.35 W	0.35 W	-	0.35 W

CMPT3019TR13

CMPT3019TR13概述

CMPT3019TR13规格参数

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CMPT3019TR13相似产品对比

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