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SFT14GHB0G

产品描述Rectifier Diode, 1 Element, 1A, 200V V(RRM), Silicon,
产品类别分立半导体    二极管   
文件大小353KB,共4页
制造商Taiwan Semiconductor
官网地址http://www.taiwansemi.com/
标准
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SFT14GHB0G概述

Rectifier Diode, 1 Element, 1A, 200V V(RRM), Silicon,

SFT14GHB0G规格参数

参数名称属性值
是否Rohs认证符合
包装说明O-PALF-W2
Reach Compliance Codecompliant
ECCN代码EAR99
其他特性HIGH RELIABILITY, LOW POWER LOSS
外壳连接ISOLATED
配置SINGLE
二极管元件材料SILICON
二极管类型RECTIFIER DIODE
JESD-30 代码O-PALF-W2
JESD-609代码e3
元件数量1
端子数量2
最高工作温度150 °C
最低工作温度-55 °C
最大输出电流1 A
封装主体材料PLASTIC/EPOXY
封装形状ROUND
封装形式LONG FORM
峰值回流温度(摄氏度)NOT SPECIFIED
参考标准AEC-Q101
最大重复峰值反向电压200 V
最大反向恢复时间0.035 µs
表面贴装NO
端子面层Tin (Sn)
端子形式WIRE
端子位置AXIAL
处于峰值回流温度下的最长时间NOT SPECIFIED
Base Number Matches1

文档预览

下载PDF文档
SFT11G - SFT18G
Taiwan Semiconductor
CREAT BY ART
1A, 50V - 600V Glass Passivated Super Fast Rectifiers
FEATURES
- High efficiency, low VF
- High current capability
- High reliability
- High surge current capability
- Low power loss
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21
MECHANICAL DATA
Case:
TS-1
Molding compound, UL flammability classification rating 94V-0
Part no. with suffix "H" means AEC-Q101 qualified
Packing code with suffix "G" means green compound (halogen-free)
Terminal:
Pure tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 2 whisker test
Weight:
0.2g (approximately)
TS-1
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(T
A
=25°C unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
Maximum instantaneous forward voltage (Note 1)
@1A
Maximum reverse current @ rated V
R
Maximum reverse recovery time (Note 2)
Typical junction capacitance (Note 3)
Typical thermal resistance
Operating junction temperature range
Storage temperature range
Note 1: Pulse test with PW=300μs, 1% duty cycle
Note 2: Reverse Recovery Test Conditions: I
F
=0.5A, I
R
=1.0A, I
RR
=0.25A
Note 3: Measured at 1 MHz and Applied Reverse Voltage of 4.0V D.C.
T
J
=25°C
T
J
=125°C
SYMBOL
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
V
F
I
R
t
rr
C
J
R
θJA
T
J
T
STG
20
100
- 55 to +150
- 55 to +150
0.95
5
100
35
10
SFT
11G
50
35
50
SFT
12G
100
70
100
SFT
13G
150
105
150
SFT
14G
200
140
200
1
30
1.3
1.7
SFT
15G
300
210
300
SFT
16G
400
280
400
SFT
17G
500
350
500
SFT
18G
600
420
600
UNIT
V
V
V
A
A
V
μA
ns
pF
°C/W
°C
°C
Document Number: DS_D1312029
Version: I15

 
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