1N4531, 1N4532
SILICON EPITAXIAL PLANAR DIODES
Fast Switching Diode
Max. 0.45
Max. 1.9
Min. 27.5
Black
Cathode Band
Black
Part No.
XXX
Max. 2.9
Min. 27.5
Glass Case DO-34
Dimensions in mm
Absolute Maximum Ratings (T
a
= 25
O
C)
Parameter
Repetitive Peak Reverse Voltage
Continuous Reverse Voltage
Continuous F
orward Current
Repetitive Peak Forward Current
Non-repetitive Peak Forward Current
at t = 1 µs
at t = 1 ms
at t = 1 s
Symbol
V
RRM
V
R
I
F
I
FRM
I
FSM
P
tot
T
j
T
S
Value
75
75
200
450
4
1
0.5
500
200
- 65 to + 200
Unit
V
V
mA
mA
A
mW
O
Power Dissipation
Junction Temperature
Storage Temperature Range
C
C
O
Characteristics at T
j
= 25
O
C
Parameter
Forward Voltage
at I
F
= 10 mA
Reverse Current
at V
R
= 20 V
at V
R
= 50 V
at V
R
= 20 V, T
j
= 150
O
C
at V
R
= 50 V, T
j
= 150
O
C
Diode Capacitance
at f = 1 MHz
Reverse Recovery Time
at I
F
= 10 mA, I
R
= 60 mA, R
L
= 100
Ω
at I
F
= 10 mA, I
R
= 10 mA, R
L
= 100
Ω
Forward Recovery Voltage
at I
F
= 100 mA, t
r
≤
30 ns
Thermal Resistance from Junction to Ambient
1N4531
1N4532
1N4531
1N4532
1N4531
1N4532
1N4531
1N4532
1N4532
Symbol
V
F
I
R
I
R
I
R
I
R
C
d
C
d
t
rr
t
rr
t
rr
V
fr
Max.
1
25
100
50
100
4
2
4
2
4
3
350
Unit
V
nA
nA
µA
µA
pF
pF
ns
ns
ns
V
K/W
R
thJA
SEMTECH ELECTRONICS LTD.
®
(Subsidiary
of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
Dated : 23/06/2007
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
