SMG2307
-4.0A, -16V,R
DS(ON)
60m
Ω
Elektronische Bauelemente
P-Channel Enhancement Mode Power Mos.FET
RoHS Compliant Product
A
SC-59
Dim
A
Min
2.70
1.40
1.00
0.35
1.70
0.00
0.10
0.20
0.85
2.40
Max
3.10
1.60
1.30
0.50
2.10
0.10
0.26
0.60
1.15
2.80
Description
The SMG2307 is universally preferred for all commercial
industrial surface mount application and suited for low
S
2
L
3
Top View
B
1
B
C
D
voltage applications such as DC/DC converters.
D
G
G
H
C
J
K
Features
* Super high dense cell design for extremely low R
DS(ON)
* Reliable and rugged
Gate
J
K
L
H
Drain
S
D
Applications
* Power Management in Notebook Computer
* Protable Equipment
* Battery Powered System
All Dimension in mm
Source
G
Marking : 2307
S
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Sate-Source Voltage
Continuous Drain Current
3
Symbol
V
DS
V
GS
I
D
@T
A
=25
C
I
D
@T
A
=70
o
C
I
DM
P
D
@T
A
=25
C
o
o
Ratings
-16
±8
-4.0
-3.3
-12
1.38
0.01
Unit
V
V
A
A
A
W
W/ C
o
o
Continuous Drain Current
3
Pulsed Drain Current
Total Power Dissipation
Linear Derating Factor
Operating Junction and Storage Temperature Range
Tj, Tstg
-55~+150
C
Thermal Data
Parameter
Thermal Resistance Junction-ambient
3
Symbol
Rthj-a
Ratings
90
Unit
o
C /W
http://www.SeCoSGmbH.com/
Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Page 1 of
4
SMG2307
Elektronische Bauelemente
-4.0A, -16V,R
DS(ON)
60m
Ω
P-Channel Enhancement Mode Power Mos.FET
Electrical Characteristics( Tj=25
o
C Unless otherwise specified)
Parameter
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Gate Threshold Voltage
Gate-Source Leakage Current
Drain-Source Leakage Current (Tj=25
o
C
)
Drain-Source Leakage Current (Tj=70
o
C
)
Static Drain-Source On-Resistance
2
Symbol
BV
DSS
BV
DS
/ Tj
V
GS(th)
I
GSS
I
DSS
Min.
-16
_
Typ.
_
Max.
_
_
Unit
V
V/
o
C
V
nA
uA
uA
Test Condition
V
GS
=0V, I
D
=-250uA
Reference to 25 C ,I
D
=-1mA
V
DS
=V
GS,
I
D
=-250uA
V
GS
=
±
8V
V
DS
=-16V,V
GS
=0
V
DS
=-12V,V
GS
=0
V
GS
=-4.5V, I
D
=-4A
V
GS
=-2.5V, I
D
=-3A
o
-0.01
_
_
_
_
_
_
-0.5
_
_
_
_
_
±
100
-1
-25
60
70
24
_
_
R
DS(ON)
Qg
Qgs
Qgd
Td
(ON)
Tr
Td
(Off)
Tf
Ciss
Coss
Crss
Gfs
_
_
_
_
_
_
_
_
_
_
_
m
Ω
Total Gate Charge
2
15
1.3
4
8
11
54
36
985
180
160
12
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Forward Transconductance
nC
I
D
=-4.0A
V
DS
=-12V
V
GS
=-4.5V
_
_
_
_
V
DS
=-10V
I
D
=-1A
nS
V
GS
=-10V
R
G
=3.3
Ω
R
D
=10
Ω
1580
_
_
pF
V
GS
=0V
V
DS
=-15V
f=1.0MHz
_
_
S
V
DS
=-5V, I
D
=-4A
Source-Drain Diode
Parameter
Forward On Voltage
2
Symbol
V
SD
Min.
_
_
Typ.
_
Max.
-1.2
_
Unit
V
Test Condition
I
S
=-1.2A, V
GS
=0V.
Is=4.0A, V
GS
=0
dl/dt=100A/uS
Reverse Recovery Time
2
Trr
Qrr
39
26
nS
Reverse Recovery Charge
_
_
nC
Notes: 1.Pulse width limited by Max. junction temperature.
2.Pulse width
≦
300us, dutycycle
≦
2%.
3.Surface mounted on 1 inch
2
copper pad of FR4 board; 270
°C/W
when mounted on min. copper pad.
http://www.SeCoSGmbH.com/
Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Page
2
of
4
SMG2307
Elektronische Bauelemente
-4.0A, -16V,R
DS(ON)
60m
Ω
P-Channel Enhancement Mode Power Mos.FET
Characteristics Curve
http://www.SeCoSGmbH.com/
Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Page
3
of
4
SMG2307
Elektronische Bauelemente
-4.0A, -16V,R
DS(ON)
60m
Ω
P-Channel Enhancement Mode Power Mos.FET
http://www.SeCoSGmbH.com/
Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Page
4
of
4
TI技术论坛
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
