HY5PS1G4(8,16)31C(L)FP-xxI
HY5PS1G4(8,16)31CFR-xxI
1Gb DDR2 SDRAM
HY5PS1G431C(L)FP-xxI
HY5PS1G831C(L)FP-xxI
HY5PS1G1631C(L)FP-xxI
HY5PS1G431CFR-xxI
HY5PS1G831CFR-xxI
HY5PS1G1631CFR-xxI
This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any
responsibility for use of circuits described. No patent licenses are implied.
Rev. 0.2 / Jul. 2008
1
HY5PS1G4(8,16)31C(L)FP-xxI
HY5PS1G4(8,16)31CFR-xxI
Revision Details
Rev.
0.1
0.2
Initial data sheet released
Updated IDD values and Halogen-free added
History
Draft Date
Oct. 2007
Jul. 2008
Rev. 0.6 / Jul. 2008
2
HY5PS1G4(8,16)31C(L)FP-xxI
HY5PS1G4(8,16)31CFR-xxI
Contents
1. Description
1.1 Device Features and Ordering Information
1.1.1 Key Features
1.1.2 Ordering Information
1.1.3 Operating Frequency
1.2 Pin configuration
1.3 Pin Description
2. Maximum DC ratings
2.1 Absolute Maximum DC Ratings
2.2 Operating Temperature Condition
3. AC & DC Operating Conditions
3.1 DC Operating Conditions
3.1.1 Recommended DC Operating Conditions(SSTL_1.8)
3.1.2 ODT DC Electrical Characteristics
3.2 DC & AC Logic Input Levels
3.2.1 Input DC Logic Level
3.2.2 Input AC Logic Level
3.2.3 AC Input Test Conditions
3.2.4 Differential Input AC Logic Level
3.2.5 Differential AC Output Parameters
3.3 Output Buffer Levels
3.3.1 Output AC Test Conditions
3.3.2 Output DC Current Drive
3.3.3 OCD default characteristics
3.4 IDD Specifications & Measurement Conditions
3.5 Input/Output Capacitance
4. AC Timing Specifications
5. Package Dimensions
Rev. 0.2 / Jul. 2008
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HY5PS1G4(8,16)31C(L)FP-xxI
HY5PS1G4(8,16)31CFR-xxI
1. Description
1.1 Device Features & Ordering Information
1.1.1 Key Features
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VDD = 1.8 +/- 0.1V
VDDQ = 1.8 +/- 0.1V
All inputs and outputs are compatible with SSTL_18 interface
8 banks
Fully differential clock inputs (CK, /CK) operation
Double data rate interface
Source synchronous-data transaction aligned to bidirectional data strobe (DQS, DQS)
Differential Data Strobe (DQS, DQS)
Data outputs on DQS, DQS edges when read (edged DQ)
Data inputs on DQS centers when write(centered DQ)
On chip DLL align DQ, DQS and DQS transition with CK transition
DM mask write data-in at the both rising and falling edges of the data strobe
All addresses and control inputs except data, data strobes and data masks latched on the rising
edges of the clock
Programmable CAS latency 3, 4, 5 and 6 supported
Programmable additive latency 0, 1, 2, 3, 4 and 5 supported
Programmable burst length 4/8 with both nibble sequential and interleave mode
Internal eight bank operations with single pulsed RAS
Auto refresh and self refresh supported
tRAS lockout supported
8K refresh cycles /64ms
JEDEC standard 60ball FBGA(x4/x8) , 84ball FBGA(x16)
Full strength driver option controlled by EMR
On Die Termination supported
Off Chip Driver Impedance Adjustment supported
Read Data Strobe supported (x8 only)
Self-Refresh High Temperature Entry
Rev. 0.6 / Jul. 2008
4
HY5PS1G4(8,16)31C(L)FP-xxI
HY5PS1G4(8,16)31CFR-xxI
1.1.2 Ordering Information
Part No.
HY5PS1G431C(L)FP-XX*I
HY5PS1G431CFR-XX*I
HY5PS1G831C(L)FP-XX*I
HY5PS1G831CFR-XX*I
HY5PS1G1631C(L)FP-XX*I
HY5PS1G1631CFR-XX*I
64Mx16
128Mx8
256Mx4
60 Ball
Configuration
Package
84 Ball
Note:
-XX* is the speed bin, refer to the Operating Frequency table for complete part number.
Hynix lead-free products are compliant to RoHS.
1.1.3 Operating Frequency
Grade
E3
C4
Y5
S6
S5
tCK(ns)
5
3.75
3
2.5
2.5
CL
3
4
5
6
5
tRCD
3
4
5
6
5
tRP
3
4
5
6
5
Unit
Clk
Clk
Clk
Clk
Clk
Rev. 0.2 / Jul. 2008
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