30.5mm (1.2 INCH) 6x7 MATRIX DISPLAY
Part Number: TA13-11SYKWB
Super Bright Yellow
Features
1.2 inch matrix height.
Low current operation.
High contrast and light output.
Stackable horizontally and vertically.
Easy mounting on P.C. boards or sockets.
Mechanically rugged.
RoHS compliant.
Description
The Super Bright Yellow device is made with AlGaInP (on
GaAs substrate) light emitting diode chip.
Package Dimensions& Internal Circuit Diagram
Notes:
1. All dimensions are in millimeters (inches), Tolerance is ±0.25(0.01")unless otherwise noted.
2. The specifications, characteristics and technical data described in the datasheet are subject to change without prior notice.
SPEC NO: DSAJ9740
APPROVED: WYNEC
REV NO: V.2
CHECKED: Joe Lee
DATE: NOV/25/2010
DRAWN: F.F.Zhou
PAGE: 1 OF 4
ERP: 1332001380
Selection Guide
Part No.
Dice
Lens Type
Iv (ucd) [1]
@ 10mA
Min.
TA13-11SYKWB
Super Bright Yellow (AlGaInP)
White Diffused
52000
Typ.
160000
Column Anode
Description
Note:
1. Luminous intensity/ luminous Flux: +/-15%.
Electrical / Optical Characteristics at TA=25°C
Symbol
λpeak
λD
[1]
Δλ1/2
C
V
F
[2]
I
R
Parameter
Peak Wavelength
Dominant Wavelength
Spectral Line Half-width
Capacitance
Forward Voltage
Reverse Current
Device
Super Bright Yellow
Super Bright Yellow
Super Bright Yellow
Super Bright Yellow
Super Bright Yellow
Super Bright Yellow
Typ.
590
590
20
20
2.0
2.5
10
Max.
Units
nm
nm
nm
pF
V
uA
Test Conditions
I
F
=20mA
I
F
=20mA
I
F
=20mA
V
F
=0V;f=1MHz
I
F
=20mA
V
R
=5V
Notes:
1.Wavelength: +/-1nm.
2. Forward Voltage: +/-0.1V.
Absolute Maximum Ratings at TA=25°C
Parameter
Power dissipation
DC Forward Current
Peak Forward Current [1]
Reverse Voltage
Operating / Storage Temperature
Lead Solder Temperature[2]
Notes:
1. 1/10 Duty Cycle, 0.1ms Pulse Width.
2. 2mm below package base.
Super Bright Yellow
75
30
175
5
-40°C To +85°C
260°C For 3-5 Seconds
Units
mW
mA
mA
V
SPEC NO: DSAJ9740
APPROVED: WYNEC
REV NO: V.2
CHECKED: Joe Lee
DATE: NOV/25/2010
DRAWN: F.F.Zhou
PAGE: 2 OF 4
ERP: 1332001380
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