Freescale Semiconductor
Technical Data
Document Number: MRF6S27050H
Rev. 1, 12/2008
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for CDMA base station applications with frequencies from 2500 to
2700 MHz. Suitable for WiMAX, WiBro, BWA, and OFDM multicarrier Class
AB and Class C amplifier applications.
•
Typical Single - Carrier W - CDMA Performance: V
DD
= 28 Volts, I
DQ
=
500 mA, P
out
= 7 Watts Avg., f = 2615 MHz, Channel Bandwidth =
3.84 MHz. PAR = 8.5 dB @ 0.01% Probability on CCDF.
Power Gain — 16 dB
Drain Efficiency — 22.5%
ACPR @ 5 MHz Offset — - 42.5 dBc @ 3.84 MHz Channel Bandwidth
•
Capable of Handling 10:1 VSWR, @ 28 Vdc, 2600 MHz, 50 Watts CW
Output Power
Features
•
Characterized with Series Equivalent Large - Signal Impedance Parameters
•
Internally Matched for Ease of Use
•
Qualified Up to a Maximum of 32 V
DD
Operation
•
Integrated ESD Protection
•
Designed for Lower Memory Effects and Wide Instantaneous Bandwidth
Applications
•
RoHS Compliant
•
In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
MRF6S27050HR3
MRF6S27050HSR3
2500 - 2700 MHz, 7 W AVG., 28 V
SINGLE W - CDMA
LATERAL N - CHANNEL
RF POWER MOSFETs
CASE 465 - 06, STYLE 1
NI - 780
MRF6S27050HR3
CASE 465A - 06, STYLE 1
NI - 780S
MRF6S27050HSR3
Table 1. Maximum Ratings
Rating
Drain - Source Voltage
Gate - Source Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
(1,2)
Symbol
V
DSS
V
GS
T
stg
T
C
T
J
Value
- 0.5, +68
- 0.5, +12
- 65 to +150
150
225
Unit
Vdc
Vdc
°C
°C
°C
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 80°C, 43 W CW
Case Temperature 72°C, 7 W CW
Symbol
R
θJC
Value
(2,3)
0.85
0.98
Unit
°C/W
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access
MTTF calculators by product.
3. Refer to AN1955,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
©
Freescale Semiconductor, Inc., 2006, 2008. All rights reserved.
MRF6S27050HR3 MRF6S27050HSR3
1
RF Device Data
Freescale Semiconductor
Table 3. ESD Protection Characteristics
Test Methodology
Human Body Model (per JESD22 - A114)
Machine Model (per EIA/JESD22 - A115)
Charge Device Model (per JESD22 - C101)
Class
1A (Minimum)
A (Minimum)
IV (Minimum)
Table 4. Electrical Characteristics
(T
C
= 25°C unless otherwise noted)
Characteristic
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(V
DS
= 68 Vdc, V
GS
= 0 Vdc)
Zero Gate Voltage Drain Leakage Current
(V
DS
= 28 Vdc, V
GS
= 0 Vdc)
Gate - Source Leakage Current
(V
GS
= 5 Vdc, V
DS
= 0 Vdc)
On Characteristics
Gate Threshold Voltage
(V
DS
= 10 Vdc, I
D
= 250
μAdc)
Gate Quiescent Voltage
(V
DD
= 28 Vdc, I
D
= 500 mAdc, Measured in Functional Test)
Drain - Source On - Voltage
(V
GS
= 10 Vdc, I
D
= 2.2 Adc)
Dynamic Characteristics
(1)
Reverse Transfer Capacitance
(V
DS
= 28 Vdc
±
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
Output Capacitance
(V
DS
= 28 Vdc
±
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
C
rss
C
oss
—
—
0.83
232
—
—
pF
pF
V
GS(th)
V
GS(Q)
V
DS(on)
1
2
—
2
2.8
0.21
3
4
0.3
Vdc
Vdc
Vdc
I
DSS
I
DSS
I
GSS
—
—
—
—
—
—
10
1
1
μAdc
μAdc
μAdc
Symbol
Min
Typ
Max
Unit
Functional Tests
(In Freescale Test Fixture, 50 ohm system) V
DD
= 28 Vdc, I
DQ
= 500 mA, P
out
= 7 W Avg. W - CDMA, f = 2615 MHz,
Single - Carrier W - CDMA, 3.84 MHz Channel Bandwidth Carrier. ACPR measured in 3.84 MHz Channel Bandwidth @
±5
MHz Offset.
PAR = 8.5 dB @ 0.01% Probability on CCDF.
Power Gain
Drain Efficiency
Adjacent Channel Power Ratio
Input Return Loss
1. Part internally matched both on input and output.
G
ps
η
D
ACPR
IRL
15
20.5
- 40
—
16
22.5
- 42.5
- 10
18
—
—
—
dB
%
dBc
dB
MRF6S27050HR3 MRF6S27050HSR3
2
RF Device Data
Freescale Semiconductor
R1
B2
V
BIAS
+
C7
RF
INPUT
+
C6
C5
C4
C3
Z9
Z8
Z10
Z1
C1
Z2
Z3
Z4
Z5
Z6
Z7
DUT
Z11
Z12
Z13
Z14
Z15
Z16
C2
Z17
B1
C8
+
C9
+
C10
C11
C12
C13
+
C14
+
C15
RF
OUTPUT
V
SUPPLY
Z1
Z2
Z3
Z4
Z5
Z6
Z7
Z8
Z9
0.748″
0.273″
0.055″
0.090″
0.195″
0.797″
0.082″
0.050″
0.070″
x 0.081″
x 0.081″
x 0.220″
x 0.440″
x 0.170″
x 0.490″
x 0.490″
x 0.476″
x 0.350″
Microstrip
Microstrip
Microstrip
Microstrip
Microstrip
Microstrip
Microstrip
Microstrip
Microstrip
Z10
Z11
Z12
Z13
Z14
Z15
Z16
Z17
PCB
0.091″ x 0.753″ Microstrip
0.150″ x 0.753″ Microstrip
0.153″ x 0.543″ Microstrip
0.145″ x 0.384″ Microstrip
0.446″ x 0.148″ Microstrip
0.130″ x 0.425″ Microstrip
0.384″ x 0.081″ Microstrip
0.730″ x 0.081″ Microstrip
Arlon CuClad 250GX - 0300 - 55 - 22, 0.030″,
ε
r
= 2.55
Figure 1. MRF6S27050HR3(SR3) Test Circuit Schematic
Table 5. MRF6S27050HR3(SR3) Test Circuit Component Designations and Values
Part
B1
B2
C1, C2
C3, C8
C4, C11
C5
C6
C7
C9, C10
C12, C13
C14
C15
R1
Ferrite Bead
Ferrite Bead, Short
4.3 pF Chip Capacitors
3.6 pF Chip Capacitors
2.2
μF,
50 V Chip Capacitors
0.01
μF,
100 V Chip Capacitor
22
μF,
25 V Tantulum Capacitor
47
μF,
16 V Tantalum Capacitor
10
μF,
50 V Tantalum Capacitors
1.0
μF,
50 V Chip Capacitors
330
μF,
63 V Electrolytic Capacitor
47
μF,
50 V Electrolytic Capacitor
2.7
Ω,
1/4 W Chip Resistor
Description
Part Number
2508051107Y0
2743019447
ATC100B4R3BT500XT
ATC100B3R6BT500XT
C1825C225J5RAC
C1825C103J1RAC
T491D226K025AT
T491D476K016AT
T491D106K050AT
GRM32RR71H105KA01B
EMVY630GTR331MMH0S
EMVK500ADA470MHA0G
CRCW12062R7FKEA
Manufacturer
Fair - Rite
Fair - Rite
ATC
ATC
Kemet
Kemet
Kemet
Kemet
Kemet
Murata
Nippon Chemi - Con
United Chemi - Con
Vishay
MRF6S27050HR3 MRF6S27050HSR3
RF Device Data
Freescale Semiconductor
3
C11
C14
B2
B1
C3
C9 C10
C8
R1
C7 C6
C4 Top
C5 Bottom
C12
C13
C15
C1
CUT OUT AREA
C2
MRF6S27050
Rev. 1A
Figure 2. MRF6S27050HR3(SR3) Test Circuit Component Layout
MRF6S27050HR3 MRF6S27050HSR3
4
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
19
18
17
G
ps
, POWER GAIN (dB)
16
15
IRL
14
13
12
ALT1
11
−70
2500 2520 2540 2560 2580 2600 2620 2640 2660 2680 2700
f, FREQUENCY (MHz)
ACPR
−40
−50
−60
η
D
G
ps
24
23
22
V
DD
= 28 Vdc, P
out
= 7 W (Avg.), I
DQ
= 500 mA
21
Single−Carrier W−CDMA, 3.84 MHz Channel
Bandwidth, PAR = 8.5 dB @ 0.01% Probability (CCDF) 20
η
D
, DRAIN
EFFICIENCY (%)
ACPR (dBc), ALT1 (dBc)
−5
−10
−15
−20
−25
Figure 3. Single - Carrier W - CDMA Broadband Performance
@ P
out
= 7 Watts Avg.
19
18
17
G
ps
, POWER GAIN (dB)
16
15
IRL
14
13
12
ACPR
G
ps
34
33
32
V
DD
= 28 Vdc, P
out
= 14 W (Avg.)
31
I
DQ
= 500 mA, Single−Carrier W−CDMA
3.84 MHz Channel Bandwidth
30
PAR = 8.5 dB @ 0.01% Probability (CCDF)
−30
−40
−50
η
D
, DRAIN
EFFICIENCY (%)
η
D
ACPR (dBc), ALT1 (dBc)
−5
−10
−15
−20
−25
ALT1
11
−60
2500 2520 2540 2560 2580 2600 2620 2640 2660 2680 2700
f, FREQUENCY (MHz)
Figure 4. Single - Carrier W - CDMA Broadband Performance
@ P
out
= 14 Watts Avg.
20
19
G
ps
, POWER GAIN (dB)
18
17
500 mA
16
15
14
125 mA
13
12
1
V
DD
= 28 Vdc
f1 = 2598.75 MHz, f2 = 2601.25 MHz
Two−Tone Measurements
10
P
out
, OUTPUT POWER (WATTS) PEP
100
250 mA
750 mA
IMD, THIRD ORDER
INTERMODULATION DISTORTION (dBc)
I
DQ
= 1000 mA
−15
−20
−25
I
DQ
= 125 mA
−30
−35
−40
−45
−50
−55
0.5
1
10
P
out
, OUTPUT POWER (WATTS) PEP
100
1000 mA
500 mA
250 mA
V
DD
= 28 Vdc, f1 = 2598.75 MHz, f2 = 2601.25 MHz
Two−Tone Measurements
750 mA
Figure 5. Two - Tone Power Gain versus
Output Power
Figure 6. Third Order Intermodulation Distortion
versus Output Power
MRF6S27050HR3 MRF6S27050HSR3
RF Device Data
Freescale Semiconductor
5
IRL, INPUT RETURN LOSS (dB)
IRL, INPUT RETURN LOSS (dB)
嵌入式系统
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