Datasheet> 器件分类 > 模拟混合信号IC> 触发装置> SKT431F08DS

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SKT431F08DS: 产品描述Silicon Controlled Rectifier, 1100A I(T)RMS, 430000mA I(T), 800V V(DRM), 800V V(RRM), 1 Element, TO-200AB; 产品类别模拟混合信号IC 触发装置; 文件大小320KB，共6页; 制造商SEMIKRON; 官网地址http://www.semikron.com

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SKT431F08DS概述

Silicon Controlled Rectifier, 1100A I(T)RMS, 430000mA I(T), 800V V(DRM), 800V V(RRM), 1 Element, TO-200AB

SKT431F08DS规格参数

参数名称	属性值
包装说明	DISK BUTTON, O-CEDB-N2
Reach Compliance Code	unknown
其他特性	FAST
标称电路换相断开时间	15 µs
配置	SINGLE
关态电压最小值的临界上升速率	500 V/us
最大直流栅极触发电流	250 mA
最大直流栅极触发电压	4 V
最大维持电流	400 mA
JEDEC-95代码	TO-200AB
JESD-30 代码	O-CEDB-N2
最大漏电流	80 mA
通态非重复峰值电流	8000 A
元件数量	1
端子数量	2
最大通态电流	430000 A
最高工作温度	125 °C
最低工作温度	-40 °C
封装主体材料	CERAMIC, METAL-SEALED COFIRED
封装形状	ROUND
封装形式	DISK BUTTON
认证状态	Not Qualified
最大均方根通态电流	1100 A
重复峰值关态漏电流最大值	80000 µA
断态重复峰值电压	800 V
重复峰值反向电压	800 V
表面贴装	YES
端子形式	NO LEAD
端子位置	END
触发设备类型	SCR
Base Number Matches	1

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SKT431F08DS相似产品对比

	SKT431F08DS	SKT431F10DS	SKT431F04DS	SKT431F06DS	SKT431F10DT	SKT351F10DT	SKT351F12DT	SKT431F06DT	SKT351F12DU
描述	Silicon Controlled Rectifier, 1100A I(T)RMS, 430000mA I(T), 800V V(DRM), 800V V(RRM), 1 Element, TO-200AB	Silicon Controlled Rectifier, 1100A I(T)RMS, 430000mA I(T), 1000V V(DRM), 1000V V(RRM), 1 Element, TO-200AB	Silicon Controlled Rectifier, 1100A I(T)RMS, 430000mA I(T), 400V V(DRM), 400V V(RRM), 1 Element, TO-200AB	Silicon Controlled Rectifier, 1100A I(T)RMS, 430000mA I(T), 600V V(DRM), 600V V(RRM), 1 Element, TO-200AB	Silicon Controlled Rectifier, 1100A I(T)RMS, 430000mA I(T), 1000V V(DRM), 1000V V(RRM), 1 Element, TO-200AB	Silicon Controlled Rectifier, 900A I(T)RMS, 350000mA I(T), 1000V V(DRM), 1000V V(RRM), 1 Element, TO-200AB	Silicon Controlled Rectifier, 900A I(T)RMS, 350000mA I(T), 1200V V(DRM), 1200V V(RRM), 1 Element, TO-200AB	Silicon Controlled Rectifier, 1100A I(T)RMS, 430000mA I(T), 600V V(DRM), 600V V(RRM), 1 Element, TO-200AB	Silicon Controlled Rectifier, 900A I(T)RMS, 350000mA I(T), 1200V V(DRM), 1200V V(RRM), 1 Element, TO-200AB
包装说明	DISK BUTTON, O-CEDB-N2	DISK BUTTON, O-CEDB-N2	DISK BUTTON, O-CEDB-N2	DISK BUTTON, O-CEDB-N2	DISK BUTTON, O-CEDB-N2	DISK BUTTON, O-CEDB-N2	DISK BUTTON, O-CEDB-N2	DISK BUTTON, O-CEDB-N2	DISK BUTTON, O-CEDB-N2
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown	unknown	unknown	unknown	unknown
其他特性	FAST	FAST	FAST	FAST	FAST	FAST	FAST	FAST	FAST
标称电路换相断开时间	15 µs	15 µs	15 µs	15 µs	20 µs	20 µs	20 µs	20 µs	25 µs
配置	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
关态电压最小值的临界上升速率	500 V/us	500 V/us	500 V/us	500 V/us	500 V/us	500 V/us	500 V/us	500 V/us	500 V/us
最大直流栅极触发电流	250 mA	250 mA	250 mA	250 mA	250 mA	250 mA	250 mA	250 mA	250 mA
最大直流栅极触发电压	4 V	4 V	4 V	4 V	4 V	4 V	4 V	4 V	4 V
最大维持电流	400 mA	400 mA	400 mA	400 mA	400 mA	400 mA	400 mA	400 mA	400 mA
JEDEC-95代码	TO-200AB	TO-200AB	TO-200AB	TO-200AB	TO-200AB	TO-200AB	TO-200AB	TO-200AB	TO-200AB
JESD-30 代码	O-CEDB-N2	O-CEDB-N2	O-CEDB-N2	O-CEDB-N2	O-CEDB-N2	O-CEDB-N2	O-CEDB-N2	O-CEDB-N2	O-CEDB-N2
最大漏电流	80 mA	80 mA	80 mA	80 mA	80 mA	80 mA	80 mA	80 mA	80 mA
通态非重复峰值电流	8000 A	8000 A	8000 A	8000 A	8000 A	6500 A	6500 A	8000 A	6500 A
元件数量	1	1	1	1	1	1	1	1	1
端子数量	2	2	2	2	2	2	2	2	2
最大通态电流	430000 A	430000 A	430000 A	430000 A	430000 A	350000 A	350000 A	430000 A	350000 A
最高工作温度	125 °C	125 °C	125 °C	125 °C	125 °C	125 °C	125 °C	125 °C	125 °C
最低工作温度	-40 °C	-40 °C	-40 °C	-40 °C	-40 °C	-40 °C	-40 °C	-40 °C	-40 °C
封装主体材料	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED
封装形状	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND
封装形式	DISK BUTTON	DISK BUTTON	DISK BUTTON	DISK BUTTON	DISK BUTTON	DISK BUTTON	DISK BUTTON	DISK BUTTON	DISK BUTTON
认证状态	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
最大均方根通态电流	1100 A	1100 A	1100 A	1100 A	1100 A	900 A	900 A	1100 A	900 A
重复峰值关态漏电流最大值	80000 µA	80000 µA	80000 µA	80000 µA	80000 µA	80000 µA	80000 µA	80000 µA	80000 µA
断态重复峰值电压	800 V	1000 V	400 V	600 V	1000 V	1000 V	1200 V	600 V	1200 V
重复峰值反向电压	800 V	1000 V	400 V	600 V	1000 V	1000 V	1200 V	600 V	1200 V
表面贴装	YES	YES	YES	YES	YES	YES	YES	YES	YES
端子形式	NO LEAD	NO LEAD	NO LEAD	NO LEAD	NO LEAD	NO LEAD	NO LEAD	NO LEAD	NO LEAD
端子位置	END	END	END	END	END	END	END	END	END
触发设备类型	SCR	SCR	SCR	SCR	SCR	SCR	SCR	SCR	SCR
Base Number Matches	1	1	1	1	1	1	1	1	-

SKT431F08DS

SKT431F08DS概述

SKT431F08DS规格参数

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